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Debanjan Jana
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引用次数
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TaO x-based resistive switching memories: prospective and challenges
A Prakash, D Jana, S Maikap
Nanoscale research letters 8 (1), 1-17, 2013
2342013
Conductive-bridging random access memory: challenges and opportunity for 3D architecture
D Jana, S Roy, R Panja, M Dutta, SZ Rahaman, R Mahapatra, S Maikap
Nanoscale research letters 10 (1), 1-23, 2015
1032015
RRAM characteristics using a new Cr/GdOx/TiN structure
D Jana, M Dutta, S Samanta, S Maikap
Nanoscale research letters 9 (1), 1-9, 2014
972014
Evolution of complementary resistive switching characteristics using IrOx/GdOx/Al2O3/TiN structure
D Jana, S Samanta, S Maikap, HM Cheng
Applied Physics Letters 108 (1), 011605, 2016
612016
Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu: AlOx/TaOx/TiN structure
S Roy, S Maikap, G Sreekanth, M Dutta, D Jana, YY Chen, JR Yang
Journal of Alloys and Compounds 637, 517-523, 2015
382015
Self-compliance-improved resistive switching using Ir/TaO x/W cross-point memory
A Prakash, D Jana, S Samanta, S Maikap
Nanoscale research letters 8 (1), 1-6, 2013
332013
Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO x/TiO x/TiN Structure
D Jana, S Samanta, S Roy, YF Lin, S Maikap
Nano-Micro Letters 7 (4), 392-399, 2015
312015
Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrO x/GdO x/W cross-point memories
D Jana, S Maikap, A Prakash, YY Chen, HC Chiu, JR Yang
Nanoscale research letters 9 (1), 1-8, 2014
302014
Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials
A Prakash, S Maikap, W Banerjee, D Jana, CS Lai
Nanoscale research letters 8 (1), 1-12, 2013
302013
Impact of device size and thickness of Al2O3 film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application
R Panja, S Roy, D Jana, S Maikap
Nanoscale research letters 9 (1), 1-11, 2014
262014
Cross-point resistive switching memory and urea sensing by using annealed GdOx film in IrOx/GdOx/W structure for biomedical applications
P Kumar, S Maikap, S Ginnaram, JT Qiu, D Jana, S Chakrabarti, ...
Journal of The Electrochemical Society 164 (4), B127-B135, 2017
212017
Formation-polarity-dependent improved resistive switching memory performance using IrOx/GdOx/WOx/W structure
D Jana, S Maikap, TC Tien, HY Lee, WS Chen, FT Chen, MJ Kao, MJ Tsai
Japanese Journal of Applied Physics 51 (4S), 04DD17, 2012
182012
Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture
S Maikap, R Panja, D Jana
Nanoscale research letters 9 (1), 1-9, 2014
142014
Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0. 2Se0. 8 Film in Cu/GeSex/W Structure
D Jana, S Chakrabarti, SZ Rahaman, S Maikap
Nanoscale research letters 10 (1), 1-8, 2015
132015
RRAM Cross-Point Arrays
H Wu, Y Liao, B Gao, D Jana, H Qian
3D Flash Memories, 223-260, 2016
112016
Impact of AlO x interfacial layer and switching mechanism in W/AlO x/TaO x/TiN RRAMs
S Chakrabarti, D Jana, M Dutta, S Maikap, YY Chen, JR Yang
Memory Workshop (IMW), 2014 IEEE 6th International, 1-4, 2014
92014
Memory structure
S Maikap, D Jana
US Patent App. 14/943,567, 2017
42017
Isotropic silicon nitride removal
M Korolik, PE Gee, BJ Bhuyan, J Sudijono, DWY Yong, KW Ang, D Jana, ...
US Patent App. 16/598,167, 2021
2021
Low current cross-point memory using gadolinium-oxide switching material
D Jana, S Maikap, YY Chen, JR Yang
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of …, 2014
2014
Rough surface improved formation-free low power resistive switching memory using IrO x/GdO x/W structure
D Jana, S Maikap, A Prakash, HY Lee, WS Chen, FT Chen, MC Kao, ...
VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International …, 2013
2013
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