| Dose-rate dependence of the total-ionizing-dose response of GaN-based HEMTs R Jiang, EX Zhang, MW McCurdy, P Wang, H Gong, D Yan, RD Schrimpf, ... IEEE Transactions on Nuclear Science 66 (1), 170-176, 2018 | 32 | 2018 |
| Total ionizing dose responses of 22-nm FDSOI and 14-nm bulk FinFET charge-trap transistors RM Brewer, EX Zhang, M Gorchichko, PF Wang, J Cox, SL Moran, ... IEEE Transactions on Nuclear Science 68 (5), 677-686, 2021 | 22 | 2021 |
| Effect of isothermal temperature on bainite transformation, microstructure and mechanical properties of LSFed 300M steel F Liu, W Zhang, X Lin, C Huang, F Liu, W Huang, P Wang, X Li Materials Today Communications 25, 101452, 2020 | 18 | 2020 |
| Total-ionizing-dose effects on InGaAs FinFETs with modified gate-stack SE Zhao, S Bonaldo, P Wang, EX Zhang, N Waldron, N Collaert, V Putcha, ... IEEE Transactions on Nuclear Science 67 (1), 253-259, 2019 | 17 | 2019 |
| Worst-case bias for high voltage, elevated-temperature stress of AlGaN/GaN HEMTs PF Wang, X Li, EX Zhang, R Jiang, MW McCurdy, BS Poling, ER Heller, ... IEEE Transactions on Device and Materials Reliability 20 (2), 420-428, 2020 | 16 | 2020 |
| X-ray and proton radiation effects on 40 nm CMOS physically unclonable function devices PF Wang, EX Zhang, KH Chuang, W Liao, H Gong, P Wang, CN Arutt, ... IEEE Transactions on Nuclear Science 65 (8), 1519-1524, 2018 | 16 | 2018 |
| Achieving superior ductility for laser directed energy deposition 300 M steel through isothermal bainitic transformation F Liu, W Zhang, X Lin, C Huang, Z Wang, F Liu, W Huang, P Wang, X Li Journal of Manufacturing Processes 60, 426-434, 2020 | 14 | 2020 |
| Effect of different heat input on the microstructure and mechanical properties of laser cladding repaired 300M steel Y Zheng, F Liu, J Gao, F Liu, C Huang, H Zheng, P Wang, H Qiu Journal of Materials Research and Technology 22, 556-568, 2023 | 12 | 2023 |
| Impacts of through-silicon vias on total-ionizing-dose effects and low-frequency noise in FinFETs K Li, EX Zhang, M Gorchichko, PF Wang, M Reaz, SE Zhao, G Hiblot, ... IEEE Transactions on Nuclear Science 68 (5), 740-747, 2021 | 12 | 2021 |
| Supply voltage dependence of ring oscillator frequencies for total ionizing dose exposures for 7-nm bulk FinFET technology Y Xiong, AT Feeley, PF Wang, X Li, EX Zhang, LW Massengill, BL Bhuva IEEE Transactions on Nuclear Science 68 (8), 1579-1584, 2021 | 10 | 2021 |
| Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS2-Interlayer-MoS2 Tunneling Junctions P Wang, CJ Perini, A O’Hara, H Gong, P Wang, EX Zhang, MW McCurdy, ... IEEE Transactions on Nuclear Science 66 (1), 420-427, 2018 | 10 | 2018 |
| Variability in total-ionizing-dose response of fourth-generation SiGe HBTs JW Teng, A Ildefonso, GN Tzintzarov, H Ying, A Moradinia, PF Wang, X Li, ... IEEE Transactions on Nuclear Science 68 (5), 949-957, 2021 | 9 | 2021 |
| Unraveling the inherent anisotropic properties of in situ alloyed copper-modified titanium alloys produced by laser powder bed fusion Y Ren, X Liu, H Wang, Y Yang, I Baker, P Wang, H Wu Journal of Alloys and Compounds 966, 171323, 2023 | 6 | 2023 |
| Total-ionizing-dose effects on polycrystalline-Si channel vertical-charge-trapping NAND devices J Cao, PF Wang, X Li, Z Guo, EX Zhang, RA Reed, ML Alles, RD Schrimpf, ... IEEE Transactions on Nuclear Science 69 (3), 314-320, 2021 | 6 | 2021 |
| Defect and impurity-center activation and passivation in irradiated AlGaN/GaN HEMTs X Li, PF Wang, X Zhao, H Qiu, M Gorchichko, MW McCurdy, RD Schrimpf, ... IEEE Transactions on Nuclear Science, 2023 | 4 | 2023 |
| Negative bias-temperature instabilities and low-frequency noise in Ge FinFETs X Luo, EX Zhang, PF Wang, K Li, D Linten, J Mitard, RA Reed, ... IEEE Transactions on Device and Materials Reliability 23 (1), 153-161, 2023 | 3 | 2023 |
| Low-frequency and random telegraph noise in 14-nm bulk si charge-trap transistors M Gorchichko, EX Zhang, M Reaz, K Li, PF Wang, J Cao, RM Brewer, ... IEEE Transactions on Electron Devices, 2023 | 2 | 2023 |
| Total-ionizing-dose effects on InGaAs FinFETs with improved gate stack SE Zhao, S Bonaldo, P Wang, EX Zhang, N Waldron, N Collaert, V Putcha, ... | 2 | 2019 |
| Effect of TiB2 content on microstructure and mechanical properties of GH3536 superalloy formed by laser solid forming J Gao, F Liu, L Liu, F Liu, Q You, Y Zheng, P Wang, H Qiu Materials Today Communications 37, 107168, 2023 | 1 | 2023 |
| Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs P Wang, EX Zhang, DM Fleetwood, PF Wang, MW McCurdy, JT Lin, ... 2021 IEEE 14th International Conference on ASIC (ASICON), 1-4, 2021 | 1 | 2021 |
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt University在 vanderbilt.edu 的电子邮件经过验证
