| In-doped gallium oxide micro-and nanostructures: morphology, structure, and luminescence properties I Lopez, AD Utrilla, E Nogales, B Mendez, J Piqueras, A Peche, ... The Journal of Physical Chemistry C 116 (6), 3935-3943, 2012 | 77 | 2012 |
| InAs quantum dot morphology after capping with In, N, Sb alloyed thin films JG Keizer, JM Ulloa, AD Utrilla, PM Koenraad Applied Physics Letters 104 (5), 2014 | 34 | 2014 |
| Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate AD Utrilla, DF Grossi, DF Reyes, A Gonzalo, V Braza, T Ben, D González, ... Applied Surface Science 444, 260-266, 2018 | 33 | 2018 |
| Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells AD Utrilla, DF Reyes, JM Llorens, I Artacho, T Ben, D González, Ž Gačević, ... Solar Energy Materials and Solar Cells 159, 282-289, 2017 | 33 | 2017 |
| Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications DF Reyes, V Braza, A Gonzalo, AD Utrilla, JM Ulloa, T Ben, D González Applied Surface Science 442, 664-672, 2018 | 31 | 2018 |
| General route for the decomposition of InAs quantum dots during the capping process D González, DF Reyes, AD Utrilla, T Ben, V Braza, A Guzman, A Hierro, ... Nanotechnology 27 (12), 125703, 2016 | 30 | 2016 |
| Strain-balanced type-II superlattices for efficient multi-junction solar cells A Gonzalo, AD Utrilla, DF Reyes, V Braza, JM Llorens, D Fuertes Marrón, ... Scientific reports 7 (1), 4012, 2017 | 29 | 2017 |
| Sb and N incorporation interplay in GaAsSbN/GaAs epilayers near lattice-matching condition for 1.0–1.16-eV photonic applications V Braza, DF Reyes, A Gonzalo, AD Utrilla, T Ben, JM Ulloa, D González Nanoscale research letters 12, 1-10, 2017 | 28 | 2017 |
| Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process D González, V Braza, AD Utrilla, A Gonzalo, DF Reyes, T Ben, A Guzman, ... Nanotechnology 28 (42), 425702, 2017 | 26 | 2017 |
| Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots D Gonzalez, DF Reyes, T Ben, AD Utrilla, A Guzman, A Hierro, JM Ulloa Solar Energy Materials and Solar Cells 145, 154-161, 2016 | 25 | 2016 |
| Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states A Gonzalo, L Stanojević, AD Utrilla, DF Reyes, V Braza, DF Marrón, T Ben, ... Solar Energy Materials and Solar Cells 200, 109949, 2019 | 20 | 2019 |
| Evaluation of different capping strategies in the InAs/GaAs QD system: Composition, size and QD density features D González, S Flores, N Ruiz-Marín, DF Reyes, L Stanojević, AD Utrilla, ... Applied Surface Science 537, 148062, 2021 | 19 | 2021 |
| Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing V Braza, DF Reyes, A Gonzalo, AD Utrilla, JM Ulloa, S Flores, T Ben, ... Applied Surface Science 459, 1-8, 2018 | 19 | 2018 |
| Impact of alloyed capping layers on the performance of InAs quantum dot solar cells AD Utrilla, JM Ulloa, Ž Gačević, DF Reyes, I Artacho, T Ben, D González, ... Solar Energy Materials and Solar Cells 144, 128-135, 2016 | 19 | 2016 |
| Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots JM Ulloa, DF Reyes, AD Utrilla, A Guzman, A Hierro, T Ben, D González Journal of Applied Physics 116 (13), 2014 | 19 | 2014 |
| GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics AD Utrilla, DF Reyes, JM Ulloa, D González, T Ben, A Guzman, A Hierro Applied Physics Letters 105 (4), 2014 | 19 | 2014 |
| Strain mapping accuracy improvement using super‐resolution techniques G BÁRCENA‐GONZÁLEZ, MP GUERRERO‐LEBRERO, E Guerrero, ... Journal of Microscopy 262 (1), 50-58, 2016 | 17 | 2016 |
| Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology JM Llorens, L Wewior, ER Cardozo de Oliveira, JM Ulloa, AD Utrilla, ... Applied Physics Letters 107 (18), 2015 | 16 | 2015 |
| Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells A Gonzalo, AD Utrilla, U Aeberhard, V Braza, DF Reyes, DF Marrón, ... Solar Energy Materials and Solar Cells 210, 110500, 2020 | 13 | 2020 |
| Nitrogen mapping from ADF imaging analysis in quaternary dilute nitride superlattices N Ruiz-Marín, DF Reyes, V Braza, A Gonzalo, T Ben, S Flores, AD Utrilla, ... Applied Surface Science 475, 473-478, 2019 | 12 | 2019 |
Benito AlenIMN-CNM, Instituto de Micro y Nanotecnología, CSIC在 csic.es 的电子邮件经过验证
