关注
Gwang-Bok Kim
Gwang-Bok Kim
在 hanyang.ac.kr 的电子邮件经过验证
标题
引用次数
引用次数
年份
High Mobility IZTO Thin‐Film Transistors Based on Spinel Phase Formation at Low Temperature through a Catalytic Chemical Reaction
GB Kim, N On, T Kim, CH Choi, JS Hur, JH Lim, JK Jeong
Small Methods, 2201522, 2023
152023
Effect of Single Spinel Phase Crystallization on Drain-Induced-Barrier-Lowering in Submicron Length IZTO Thin-Film Transistors
GB Kim, T Kim, CH Choi, SW Chung, JK Jeong
IEEE Electron Device Letters, 2023
22023
Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors
GB Kim, T Kim, SW Bang, JS Hur, CH Choi, MJ Kim, JK Jeong
ACS Applied Materials & Interfaces 16 (18), 23467-23475, 2024
2024
Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO2 gate dielectric through insertion of SiO …
CH Choi, T Kim, MJ Kim, GB Kim, JE Oh, JK Jeong
Scientific Reports 14 (1), 7623, 2024
2024
Spinel Single Phase Indium Zinc Tin Oxide Thin-Film Transistors with High Mobility and Excellent Uniformity
KG Bok, JJ Kyeong
Proceedings of the International Display Workshops, 165, 2023
2023
High Mobility IZTO Thin‐Film Transistors Based on Spinel Phase Formation at Low Temperature through a Catalytic Chemical Reaction (Small Methods 7/2023)
GB Kim, N On, T Kim, CH Choi, JS Hur, JH Lim, JK Jeong
Small Methods 7 (7), 2370036, 2023
2023
Thin film transistor comprising crystalline izto oxide semiconductor, and method for producing same
JK Jeong, GB Kim
US Patent App. 17/798,414, 2023
2023
Sub-cycle controlled ALD IGO TFTs with submicron-channel length
G Kim, JK Jeong
한국정보통신설비학회 학술대회, 106-106, 2022
2022
Improved Field-Effect Mobility of In-Zn-Sn-O Thin Film Transistor by Oxidized Metal Layer
G Kim, JK Jeong
한국정보통신설비학회 학술대회, 54-54, 2021
2021
系统目前无法执行此操作,请稍后再试。
文章 1–9