| A Comparative Study on the Electrical Properties of Vertical () and (010)-Ga2O3Schottky Barrier Diodes on EFG Single-Crystal Substrates H Fu, H Chen, X Huang, I Baranowski, J Montes, TH Yang, Y Zhao IEEE Transactions on Electron Devices 65 (8), 3507-3513, 2018 | 103 | 2018 |
| High performance vertical GaN-on-GaN pn power diodes with hydrogen-plasma-based edge termination H Fu, K Fu, X Huang, H Chen, I Baranowski, TH Yang, J Montes, Y Zhao IEEE Electron Device Letters 39 (7), 1018-1021, 2018 | 66 | 2018 |
| High voltage vertical GaN pn diodes with hydrogen-plasma based guard rings H Fu, K Fu, SR Alugubelli, CY Cheng, X Huang, H Chen, TH Yang, ... IEEE Electron Device Letters 41 (1), 127-130, 2019 | 65 | 2019 |
| Demonstration of mechanically exfoliated β-Ga2O3/GaN pn heterojunction J Montes, C Yang, H Fu, TH Yang, K Fu, H Chen, J Zhou, X Huang, ... Applied Physics Letters 114 (16), 2019 | 65 | 2019 |
| Investigation of GaN-on-GaN vertical pn diode with regrown p-GaN by metalorganic chemical vapor deposition K Fu, H Fu, H Liu, SR Alugubelli, TH Yang, X Huang, H Chen, ... Applied physics letters 113 (23), 2018 | 65 | 2018 |
| Reverse leakage analysis for as-grown and regrown vertical GaN-on-GaN Schottky barrier diodes K Fu, H Fu, X Huang, TH Yang, CY Cheng, PR Peri, H Chen, J Montes, ... IEEE Journal of the Electron Devices Society 8, 74-83, 2020 | 60 | 2020 |
| Demonstration of 1.27 kV Etch-Then-Regrow GaN - Junctions With Low Leakage for GaN Power Electronics K Fu, H Fu, X Huang, H Chen, TH Yang, J Montes, C Yang, J Zhou, ... IEEE Electron Device Letters 40 (11), 1728-1731, 2019 | 60 | 2019 |
| Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications H Chen, H Fu, X Huang, X Zhang, TH Yang, JA Montes, I Baranowski, ... Optics express 25 (25), 31758-31773, 2017 | 55 | 2017 |
| Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates TH Yang, H Fu, H Chen, X Huang, J Montes, I Baranowski, K Fu, Y Zhao Journal of Semiconductors 40 (1), 012801, 2019 | 50 | 2019 |
| Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron-and hole-blocking layers X Huang, H Chen, H Fu, I Baranowski, J Montes, TH Yang, K Fu, ... Applied Physics Letters 113 (4), 2018 | 43 | 2018 |
| Characterizations of the nonlinear optical properties for (010) and (2 01) beta-phase gallium oxide H Chen, H Fu, X Huang, JA Montes, TH Yang, I Baranowski, Y Zhao Optics express 26 (4), 3938-3946, 2018 | 43 | 2018 |
| Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing H Fu, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, J Montes, TH Yang, ... Applied Physics Express 12 (5), 051015, 2019 | 41 | 2019 |
| IGZO-TFT biosensors for Epstein–Barr virus protein detection TH Yang, TY Chen, NT Wu, YT Chen, JJ Huang IEEE Transactions on Electron Devices 64 (3), 1294-1299, 2017 | 37 | 2017 |
| GaN vertical-channel junction field-effect transistors with regrown p-GaN by MOCVD C Yang, H Fu, VN Kumar, K Fu, H Liu, X Huang, TH Yang, H Chen, J Zhou, ... IEEE Transactions on Electron Devices 67 (10), 3972-3977, 2020 | 32 | 2020 |
| Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress X Huang, H Fu, H Chen, Z Lu, I Baranowski, J Montes, TH Yang, ... Applied Physics Letters 111 (23), 2017 | 28 | 2017 |
| Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing C Yang, H Fu, P Peri, K Fu, TH Yang, J Zhou, J Montes, DJ Smith, Y Zhao IEEE Electron Device Letters 42 (8), 1128-1131, 2021 | 27 | 2021 |
| Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing m-plane GaN substrates H Fu, X Zhang, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, ... Applied Physics Express 11 (11), 111003, 2018 | 27 | 2018 |
| Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress H Fu, K Fu, C Yang, H Liu, KA Hatch, P Peri, DH Mudiyanselage, B Li, ... Materials Today 49, 296-323, 2021 | 26 | 2021 |
| Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability K Fu, H Fu, X Huang, TH Yang, H Chen, I Baranowski, J Montes, C Yang, ... IEEE Electron Device Letters 40 (3), 375-378, 2019 | 26 | 2019 |
| Transient analysis of streptavidin-biotin complex detection using an IGZO thin film transistor-based biosensor integrated with a microfluidic channel TY Chen, TH Yang, NT Wu, YT Chen, JJ Huang Sensors and Actuators B: Chemical 244, 642-648, 2017 | 24 | 2017 |
Houqiang FuAssistant Professor, School of ECEE, Arizona State University在 asu.edu 的电子邮件经过验证
