| High performance PRAM cell scalable to sub-20nm technology with below 4F2 cell size, extendable to DRAM applications IS Kim, SL Cho, DH Im, EH Cho, DH Kim, GH Oh, DH Ahn, SO Park, ... 2010 Symposium on VLSI Technology, 203-204, 2010 | 257 | 2010 |
| A unified 7.5 nm dash-type confined cell for high performance PRAM device DH Im, JI Lee, SL Cho, HG An, DH Kim, IS Kim, H Park, DH Ahn, H Horii, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 115 | 2008 |
| Parallel multi-confined (PMC) cell technology for high density MLC PRAM GH Oh, YL Park, JI Lee, DH Im, JS Bae, DH Kim, DH Ahn, H Horii, ... 2009 Symposium on VLSI Technology, 220-221, 2009 | 93 | 2009 |
| Ab initio study on influence of dopants on crystalline and amorphous Ge2Sb2Te5 E Cho, S Han, D Kim, H Horii, HS Nam Journal of Applied Physics 109 (4), 043705-043705-10, 2011 | 56 | 2011 |
| Growth of vertically aligned arrays of carbon nanotubes for high field emission D Kim, SH Lim, AJ Guilley, CS Cojocaru, JE Bourée, L Vila, JH Ryu, ... Thin Solid Films 516 (5), 706-709, 2008 | 38 | 2008 |
| Effects of pressure on atomic and electronic structure and crystallization dynamics of amorphous J Im, E Cho, D Kim, H Horii, J Ihm, S Han Physical Review B—Condensed Matter and Materials Physics 81 (24), 245211, 2010 | 37 | 2010 |
| Synthesis of multi-walled carbon nanotubes by combining hot-wire and dc plasma-enhanced chemical vapor deposition CS Cojocaru, D Kim, D Pribat, JE Bourée Thin Solid Films 501 (1-2), 227-232, 2006 | 33 | 2006 |
| Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory device US Patent 8,142,846, 2012 | 31* | 2012 |
| Atomic and electronic structures of amorphous Ge2Sb2Te5; melt-quenched versus ideal glasses E Cho, J Im, C Park, WJ Son, DH Kim, H Horii, J Ihm, S Han Journal of Physics: Condensed Matter 22 (20), 205504, 2010 | 29 | 2010 |
| Calculation of the field enhancement for a nanotube array and its emission properties D Kim, JE Bouree, SY Kim Journal of applied physics 105 (8), 084315, 2009 | 29 | 2009 |
| Numerical study on the field emission properties of aligned carbon nanotubes using the hybrid field enhancement scheme D Kim, JE Bourée, SY Kim Applied Physics A 83, 111-114, 2006 | 23 | 2006 |
| Semiconductor memory devices US Patent 9,997,462, 2018 | 18* | 2018 |
| Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same US Patent 8,192,592, 2012 | 18* | 2012 |
| Methods of forming phase-changeable memory devices using growth-enhancing and growth-inhibiting layers for phase-changeable materials US Patent 7,772,067, 2010 | 18* | 2010 |
| Apparatus and methods for forming phase change layer and method of manufacturing phase change memory device US Patent 8,980,679, 2015 | 14* | 2015 |
| A microscopic model for resistance drift in amorphous Ge2Sb2Te5 J Im, E Cho, D Kim, H Horii, J Ihm, S Han Current Applied Physics 11 (2), e82-e84, 2011 | 14 | 2011 |
| New crystallization kinetics of phase change of Ge2Sb2Te5 at moderately elevated temperature SH An, D Kim, SY Kim Japanese journal of applied physics 41 (12R), 7400, 2002 | 13 | 2002 |
| Interconnection structure having oxygen trap pattern in semiconductor device US Patent 8,232,638, 2012 | 11* | 2012 |
| Calculation of the local electric field for an infinite array of conducting nanosized objects M Lim, D Kim, SY Kim, JE Bouree Journal of Physics A: Mathematical and Theoretical 40 (4), 853, 2007 | 11 | 2007 |
| Methods of fabricating semiconductor device including phase change layer US Patent 7,838,326, 2010 | 10* | 2010 |
Eunae ChoPrincipal Engineer, Data & Information Technology (DIT) Center, Samsung Electronics在 samsung.com 的电子邮件经过验证
