| GaInAsP/InP surface emitting injection lasers H Soda, K Iga, C Kitahara, Y Suematsu Japanese Journal of Applied Physics 18 (12), 2329, 1979 | 1007 | 1979 |
| Surface emitting semiconductor lasers K Iga, F Koyama, S Kinoshita IEEE Journal of Quantum Electronics 24 (9), 1845-1855, 1988 | 989 | 1988 |
| Surface-emitting laser-its birth and generation of new optoelectronics field K Iga IEEE Journal of selected topics in Quantum Electronics 6 (6), 1201-1215, 2000 | 917 | 2000 |
| Frequency chirping in external modulators F Koyama, K Iga Journal of Lightwave Technology 6 (1), 87-93, 1988 | 631 | 1988 |
| Room‐temperature continuous wave lasing characteristics of a GaAs vertical cavity surface‐emitting laser F Koyama, S Kinoshita, K Iga Applied physics letters 55 (3), 221-222, 1989 | 462 | 1989 |
| Vertical-cavity surface-emitting laser: Its conception and evolution K Iga Japanese Journal of Applied Physics 47 (1R), 1, 2008 | 328 | 2008 |
| Vertical-cavity surface-emitting laser devices K Iga, HE Li Cham, Switzerland: Springer, 2003 | 324 | 2003 |
| Spontaneous emission factor of a microcavity DBR surface-emitting laser T Baba, T Hamano, F Koyama, K Iga IEEE Journal of Quantum Electronics 27 (6), 1347-1358, 1991 | 321 | 1991 |
| Electron reflectance of multiquantum barrier (MQB) K Iga, H Uenohara, F Koyama Electronics Letters 22, 1008-1010, 1986 | 233 | 1986 |
| Stacked planar optics: an application of the planar microlens K Iga, M Oikawa, S Misawa, J Banno, Y Kokubun Applied optics 21 (19), 3456-3460, 1982 | 231 | 1982 |
| A record low threshold InGaAs/GaAlAs vertical-cavity surface-emitting laser Y Hayashi, T Mukaihara, N Hatori, N Ohnoki, A Matsutani, F Koyama, ... Quantum Optoelectronics, PD2, 1995 | 227 | 1995 |
| Fundamentals of microoptics K Iga, Y Kokubun, M Oikawa Tokyo: Academic Press and OHM, 1984 | 191 | 1984 |
| Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser T Baba, Y Yogo, K Suzuki, F Koyama, K Iga Electronics Letters 10 (29), 913-914, 1993 | 175 | 1993 |
| Monolithic two‐section GaInAsP/InP active‐optical‐resonator devices formed by reactive ion etching LA Coldren, BI Miller, K Iga, JA Rentschler Applied Physics Letters 38 (5), 315-317, 1981 | 172 | 1981 |
| Microcavity GalaAs/GaAs surface-emitting laser with Ith= 6 mA K Iga, S Kinoshita, F Koyama Electronics letters 3 (23), 134-136, 1987 | 145 | 1987 |
| GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet LA Coldren, K Iga, BI Miller, JA Rentschler Applied Physics Letters 37 (8), 681-683, 1980 | 145 | 1980 |
| Distributed-index planar microlens M Oikawa, K Iga Applied Optics 21 (6), 1052-1056, 1982 | 141 | 1982 |
| Array of distributed-index planar micro-lenses prepared from ion exchange technique M Oikawa, K Iga, T Sanada, N Yamamoto, K Nishizawa Japanese Journal of Applied Physics 20 (4), L296, 1981 | 134 | 1981 |
| Room temperature cw operation of GaAs vertical cavity surface emitting laser F Koyama, S KINOSHITA, K IGA IEICE TRANSACTIONS (1976-1990) 71 (11), 1089-1090, 1988 | 133 | 1988 |
| Room‐temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laser K Iga, S Ishikawa, S Ohkouchi, T Nishimura Applied Physics Letters 45 (4), 348-350, 1984 | 133 | 1984 |
Fumio KoyamaTokyo Institute of Technology在 pi.titech.ac.jp 的电子邮件经过验证
