| Scaling hetero-epitaxy from layers to three-dimensional crystals CV Falub, H von Känel, F Isa, R Bergamaschini, A Marzegalli, ... Science 335 (6074), 1330-1334, 2012 | 204 | 2012 |
| Faceting of equilibrium and metastable nanostructures: a phase-field model of surface diffusion tackling realistic shapes M Salvalaglio, R Backofen, R Bergamaschini, F Montalenti, A Voigt Crystal Growth & Design 15 (6), 2787-2794, 2015 | 84 | 2015 |
| Self-aligned Ge and SiGe three-dimensional epitaxy on dense Si pillar arrays R Bergamaschini, F Isa, CV Falub, P Niedermann, E Müller, G Isella, ... Surface science reports 68 (3-4), 390-417, 2013 | 53 | 2013 |
| Ge crystals on Si show their light F Pezzoli, F Isa, G Isella, CV Falub, T Kreiliger, M Salvalaglio, ... Physical Review Applied 1 (4), 044005, 2014 | 43 | 2014 |
| Continuum modelling of semiconductor heteroepitaxy: an applied perspective R Bergamaschini, M Salvalaglio, R Backofen, A Voigt, F Montalenti Advances in Physics: X 1 (3), 331-367, 2016 | 41 | 2016 |
| Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment M Albani, L Ghisalberti, R Bergamaschini, M Friedl, M Salvalaglio, A Voigt, ... Physical Review Materials 2 (9), 093404, 2018 | 40 | 2018 |
| Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires M Albani, S Assali, MA Verheijen, S Koelling, R Bergamaschini, F Pezzoli, ... Nanoscale 10 (15), 7250-7256, 2018 | 39 | 2018 |
| Anomalous smoothing preceding island formation during growth on patterned substrates R Bergamaschini, J Tersoff, Y Tu, JJ Zhang, G Bauer, F Montalenti Physical review letters 109 (15), 156101, 2012 | 38 | 2012 |
| Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Si M Salvalaglio, R Bergamaschini, F Isa, A Scaccabarozzi, G Isella, ... ACS applied materials & interfaces 7 (34), 19219-19225, 2015 | 31 | 2015 |
| Competition between kinetics and thermodynamics during the growth of faceted crystal by phase field modeling M Albani, R Bergamaschini, M Salvalaglio, A Voigt, L Miglio, F Montalenti physica status solidi (b) 256 (7), 1800518, 2019 | 29 | 2019 |
| Strain engineering in Ge/GeSn core/shell nanowires S Assali, M Albani, R Bergamaschini, MA Verheijen, A Li, S Kölling, ... Applied Physics Letters 115 (11), 2019 | 28 | 2019 |
| Kinetic control of morphology and composition in Ge/GeSn core/shell nanowires S Assali, R Bergamaschini, E Scalise, MA Verheijen, M Albani, A Dijkstra, ... ACS nano 14 (2), 2445-2455, 2020 | 24 | 2020 |
| Dislocation-Free SiGe/Si Heterostructures F Montalenti, F Rovaris, R Bergamaschini, L Miglio, M Salvalaglio, ... Crystals 8 (6), 257, 2018 | 24 | 2018 |
| Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended film M Salvalaglio, R Bergamaschini, R Backofen, A Voigt, F Montalenti, ... Applied Surface Science 391, 33-38, 2017 | 24 | 2017 |
| 3D heteroepitaxy of mismatched semiconductors on silicon CV Falub, T Kreiliger, F Isa, AG Taboada, M Meduňa, F Pezzoli, ... Thin Solid Films 557, 42-49, 2014 | 22 | 2014 |
| Modeling the competition between elastic and plastic relaxation in semiconductor heteroepitaxy: From cyclic growth to flat films F Rovaris, R Bergamaschini, F Montalenti Physical Review B 94 (20), 205304, 2016 | 21 | 2016 |
| Dynamics of pit filling in heteroepitaxy via phase-field simulations M Albani, R Bergamaschini, F Montalenti Physical Review B 94 (7), 075303, 2016 | 20 | 2016 |
| Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si (001) R Bergamaschini, M Brehm, M Grydlik, T Fromherz, G Bauer, F Montalenti Nanotechnology 22 (28), 285704, 2011 | 19 | 2011 |
| Three-dimensional epitaxial Si1-xGex, Ge and SiC crystals on deeply patterned Si substrates H von Känel, F Isa, CV Falub, EJ Barthazy, EM Gubler, D Chrastina, ... ECS Transactions 64 (6), 631, 2014 | 15 | 2014 |
| Selective area epitaxy of GaAs/Ge/Si nanomembranes: a morphological study M Bollani, A Fedorov, M Albani, S Bietti, R Bergamaschini, F Montalenti, ... Crystals 10 (2), 57, 2020 | 14 | 2020 |
