| Performance and ruggedness of 1200V SiC—Trench—MOSFET D Peters, R Siemieniec, T Aichinger, T Basler, R Esteve, W Bergner, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 132 | 2017 |
| Investigation of threshold voltage stability of SiC MOSFETs D Peters, T Aichinger, T Basler, G Rescher, K Puschkarsky, H Reisinger 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 85 | 2018 |
| Mechanical analysis of press-pack IGBTs T Poller, T Basler, M Hernes, S D’Arco, J Lutz Microelectronics Reliability 52 (9-10), 2397-2402, 2012 | 78 | 2012 |
| The new CoolSiC™ trench MOSFET technology for low gate oxide stress and high performance D Peters, T Basler, B Zippelius, T Aichinger, W Bergner, R Esteve, ... PCIM Europe 2017; International Exhibition and Conference for Power …, 2017 | 77 | 2017 |
| A SiC trench MOSFET concept offering improved channel mobility and high reliability R Siemieniec, D Peters, R Esteve, W Bergner, D Kück, T Aichinger, ... 2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017 | 71 | 2017 |
| Short-circuit ruggedness of high-voltage IGBTs J Lutz, T Basler 2012 28th International Conference on Microelectronics Proceedings, 243-250, 2012 | 57 | 2012 |
| Practical aspects and body diode robustness of a 1200 V SiC trench MOSFET T Basler, D Heer, D Peters, T Aichinger, R Schoerner PCIM Europe 2018; International Exhibition and Conference for Power …, 2018 | 35 | 2018 |
| Various structures of 1200V SiC MPS diode models and their simulated surge current behavior in comparison to measurement S Palanisamy, S Fichtner, J Lutz, T Basler, R Rupp 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 34 | 2016 |
| Electro-thermal simulations and experimental results on the surge current capability of 1200 V SiC MPS diodes S Fichtner, J Lutz, T Basler, R Rupp, R Gerlach CIPS 2014; 8th International Conference on Integrated Power Electronics …, 2014 | 32 | 2014 |
| Repetitive surge current test of SiC MPS diode with load in bipolar regime S Palanisamy, J Kowalsky, J Lutz, T Basler, R Rupp, J Moazzami-Fallah 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 27 | 2018 |
| Thermal interface material having defined thermal, mechanical and electric properties C Kasztelan, E Fuergut, M Mengel, F Brucchi, T Basler US Patent App. 15/333,993, 2017 | 26 | 2017 |
| Surge current capability of IGBTs T Basler, J Lutz, R Jakob, T Brückner International Multi-Conference on Systems, Signals & Devices, 1-6, 2012 | 26 | 2012 |
| Avalanche robustness of SiC MPS diodes T Basler, R Rupp, R Gerlach, B Zippelius, M Draghici PCIM Europe 2016; International Exhibition and Conference for Power …, 2016 | 25 | 2016 |
| Ruggedness of high-voltage IGBTs and protection solutions T Basler Dissertation, Chemnitz, Technische Universität Chemnitz, 2014, 2014 | 24 | 2014 |
| The influence of asymmetries on the parallel connection of IGBT chips under short-circuit condition T Basler, J Lutz, R Jakob, T Brückner Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011 | 23 | 2011 |
| Silicon carbide semiconductor component T Basler, HJ Schulze, R Siemieniec US Patent 10,950,696, 2021 | 22 | 2021 |
| Investigation of the avalanche ruggedness of SiC MPS diodes under repetitive unclamped-inductive-switching stress S Palanisamy, MK Ahmmed, J Kowalsky, J Lutz, T Basler Microelectronics Reliability 100, 113435, 2019 | 22 | 2019 |
| Dynamic Self-Clamping at Short-Circuit Turn-Off of High-Voltage IGBTs T Basler, R Bhojani, J Lutz, R Jakob 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa …, 2013 | 22 | 2013 |
| Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density S Palanisamy, T Basler, J Lutz, C Künzel, L Wehrhahn-Kilian, R Elpelt 2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021 | 21 | 2021 |
| 1200V SiC Trench-MOSFET optimized for high reliability and high performance D Peters, T Aichinger, T Basler, W Bergner, D Kueck, R Esteve Materials Science Forum 897, 489-492, 2017 | 21 | 2017 |
