| Finite size effects in highly scaled ruthenium interconnects S Dutta, K Moors, M Vandemaele, C Adelmann IEEE Electron Device Letters 39 (2), 268-271, 2018 | 60 | 2018 |
| Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the $\{\boldsymbol {V … E Bury, A Chasin, M Vandemaele, S Van Beek, J Franco, B Kaczer, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 23 | 2019 |
| Full () Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs M Vandemaele, B Kaczer, S Tyaginov, Z Stanojević, A Makarov, A Chasin, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019 | 18 | 2019 |
| Simulation comparison of hot-carrier degradation in nanowire, nanosheet and forksheet FETs M Vandemaele, B Kaczer, S Tyaginov, E Bury, A Chasin, J Franco, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 6A. 2-1-6A. 2-9, 2022 | 13 | 2022 |
| The influence of gate bias on the anneal of hot-carrier degradation M Vandemaele, KH Chuang, E Bury, S Tyaginov, G Groeseneken, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020 | 13 | 2020 |
| A compact physics analytical model for hot-carrier degradation S Tyaginov, A Grill, M Vandemaele, T Grasser, G Hellings, A Makarov, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020 | 13 | 2020 |
| Understanding the intrinsic reliability behavior of -/-Si and -Ge nanowire FETs utilizing degradation maps A Chasin, E Bury, J Franco, B Kaczer, M Vandemaele, H Arimura, ... 2018 IEEE International Electron Devices Meeting (IEDM), 34.1. 1-34.1. 4, 2018 | 12 | 2018 |
| A ring-oscillator-based degradation monitor concept with tamper detection capability J Diaz-Fortuny, P Saraza-Canflanca, E Bury, M Vandemaele, B Kaczer, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2022 | 11 | 2022 |
| Bi-modal variability of nFinFET characteristics during hot-carrier stress: A modeling approach A Makarov, B Kaczer, A Chasin, M Vandemaele, E Bury, M Jech, A Grill, ... IEEE Electron Device Letters 40 (10), 1579-1582, 2019 | 11 | 2019 |
| Evaluating forksheet FET reliability concerns by experimental comparison with co-integrated nanosheets E Bury, A Chasin, B Kaczer, M Vandemaele, S Tyaginov, J Franco, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 5A. 2-1-5A. 2-7, 2022 | 10 | 2022 |
| Understanding and physical modeling superior hot-carrier reliability of Ge pNWFETs S Tyaginov, AM El-Sayed, A Makarov, A Chasin, H Arimura, ... 2019 IEEE International Electron Devices Meeting (IEDM), 21.3. 1-21.3. 4, 2019 | 9 | 2019 |
| Modeling the effect of random dopants on hot-carrier degradation in FinFETs A Makarov, B Kaczer, P Roussel, A Chasin, A Grill, M Vandemaele, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019 | 9 | 2019 |
| Modeling of repeated FET hot-carrier stress and anneal cycles using Si–H bond dissociation/passivation energy distributions M Vandemaele, J Franco, S Tyaginov, G Groeseneken, B Kaczer IEEE Transactions on Electron Devices 68 (4), 1454-1460, 2021 | 8 | 2021 |
| The impact of self-heating and its implications on hot-carrier degradation–A modeling study S Tyaginov, A Makarov, A Chasin, E Bury, M Vandemaele, M Jech, A Grill, ... Microelectronics Reliability 122, 114156, 2021 | 6 | 2021 |
| Stochastic modeling of the impact of random dopants on hot-carrier degradation in n-FinFETs A Makarov, B Kaczer, P Roussel, A Chasin, A Grill, M Vandemaele, ... IEEE Electron Device Letters 40 (6), 870-873, 2019 | 6 | 2019 |
| Understanding and modeling opposite impacts of self-heating on hot-carrier degradation in n-and p-channel transistors S Tyaginov, A Makarov, AMB El-Sayed, A Chasin, E Bury, M Jech, ... 2022 IEEE International Reliability Physics Symposium (IRPS), 6A. 3-1-6A. 3-8, 2022 | 5 | 2022 |
| On The Contribution of Secondary Holes in Hot-Carrier Degradation–a Compact Physics Modeling Perspective SE Tyaginov, E Bury, A Grill, Z Yu, A Makarov, A De Keersgieter, ... 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 4 | 2023 |
| The properties, effect and extraction of localized defect profiles from degraded FET characteristics M Vandemaele, B Kaczer, S Tyaginov, J Franco, R Degraeve, A Chasin, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021 | 4 | 2021 |
| Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs S Tyaginov, B O’Sullivan, A Chasin, Y Rawal, T Chiarella, ... Micromachines 14 (8), 1514, 2023 | 3 | 2023 |
| Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations M Vandemaele, B Kaczer, E Bury, J Franco, A Chasin, A Makarov, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-10, 2023 | 3 | 2023 |
