| Characterization of Al2O3/LaAlO3/SiO2 Gate Stack on 4H-SiC After Post-Deposition Annealing L Huang, Y Liu, C Xiao, Y Ding, X Peng, Y Onozawa, T Tsuji, N Fujishima, ... IEEE Transactions on Electron Devices 68 (4), 2133-2137, 2021 | 69 | 2021 |
| Static Performance and Threshold Voltage Stability Improvement of Al2O3/LaAlO3/SiO2 Gate-Stack for SiC Power MOSFETs L Huang, Y Liu, X Peng, Y Onozawa, T Tsuji, N Fujishima, JKO Sin IEEE Transactions on Electron Devices 69 (2), 690-695, 2022 | 9 | 2022 |
| A novel 3300V trench IGBT with hole extraction structure for low power loss X Peng, Z Li, Y Zhao, Y Yang, M Ren, J Zhang, W Gao, B Zhang, Z Li, ... 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 8 | 2019 |
| A fast and soft reverse recovery diode with a Punch-Through NPN structure X Peng, Y Liu, H Feng, L Huang, JKO Sin IEEE Electron Device Letters 44 (1), 108-111, 2022 | 5 | 2022 |
| IGBT device with MOS controllable hole path LI Zehong, X Peng, Z Yishang, M Ren, B Zhang US Patent 10,923,583, 2021 | 2 | 2021 |
| High voltage trench insulated gate bipolar transistor with MOS structure for self-adjustable hole extraction Y Zhao, Z Li, X Peng, Y Yang, X Zeng, M Ren, J Zhang, W Gao, B Zhang Semiconductor Science and Technology 35 (11), 11LT01, 2020 | 2 | 2020 |
| A New Double Trench, Buried-P JTE Edge Termination for 1200 V-class SiC Devices Y Liu, H Feng, X Zhou, L Huang, C Xiao, X Peng, JKO Sin 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 2 | 2020 |
| On-Resistance–Reliability Tradeoffs in Al₂O₃/LaAlO₃/SiO₂ Gate for SiC Power MOSFETs L Huang, Y Liu, X Peng, T Tsuji, Y Onozawa, N Fujishima, JKO Sin IEEE Transactions on Electron Devices 70 (2), 675-682, 2022 | 1 | 2022 |
| Analysis of SenseFET Performance Degradation under Electric Stress Y Yang, ZH Li, PF Jia, X Peng, M Ren, JP Zhang, W Gao, B Zhang 2018 14th IEEE International Conference on Solid-State and Integrated …, 2018 | 1 | 2018 |
| Analysis of Novel 3300V Embedded Ballast Resistor IGBT with Robust Short-circuit Capability X Peng, ZH Li, YZ Wu, JP Zhang, W Gao, M Ren, B Zhang 2018 14th IEEE International Conference on Solid-State and Integrated …, 2018 | 1 | 2018 |
| Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs LH Huang, Y Liu, X Peng, T Tsuji, Y Onozawa, N Fujishima, JKO Sin Solid State Phenomena 358, 79-87, 2024 | | 2024 |
| Experimental Demonstration of the Double-Trench, Buried-P JTE Edge Termination with Short Edge Width and High dV/dt Capability for 1200 V-class SiC Devices Y Liu, H Feng, X Peng, L Huang, JKO Sin 2024 36th International Symposium on Power Semiconductor Devices and ICs …, 2024 | | 2024 |
| Analysis and Characterization of the Punchthrough npn Diode for Hard Switching Power Control Applications X Peng, Y Liu, H Feng, L Huang, JKO Sin IEEE Transactions on Electron Devices, 2023 | | 2023 |
| On the Electron Extraction Mechanism in Punch-through NPN Fast Recovery Diodes X Peng, Y Liu, H Feng, L Huang, JKO Sin 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | | 2023 |
Bo Zhang （张波）,ProfessorUniv. of Electron. Sci. & Technol. of China在 uestc.edu.cn 的电子邮件经过验证
