| Ubiquitous relaxation in BTI stressing—New evaluation and insights B Kaczer, T Grasser, J Roussel, J Martin-Martinez, R O'Connor, ... 2008 IEEE International Reliability Physics Symposium, 20-27, 2008 | 306 | 2008 |
| Emerging yield and reliability challenges in nanometer CMOS technologies G Gielen, P De Wit, E Maricau, J Loeckx, J Martin-Martinez, B Kaczer, ... Proceedings of the conference on Design, automation and test in Europe, 1322 …, 2008 | 189 | 2008 |
| NBTI from the perspective of defect states with widely distributed time scales B Kaczer, T Grasser, J Martin-Martinez, E Simoen, M Aoulaiche, ... 2009 IEEE International Reliability Physics Symposium, 55-60, 2009 | 128 | 2009 |
| Probabilistic defect occupancy model for NBTI J Martin-Martinez, B Kaczer, M Toledano-Luque, R Rodriguez, M Nafria, ... 2011 International Reliability Physics Symposium, XT. 4.1-XT. 4.6, 2011 | 87 | 2011 |
| New weighted time lag method for the analysis of random telegraph signals J Martin-Martinez, J Diaz, R Rodriguez, M Nafria, X Aymerich IEEE Electron Device Letters 35 (4), 479-481, 2014 | 75 | 2014 |
| Reliability in super-and near-threshold computing: A unified model of RTN, BTI, and PV VM Van Santen, J Martin-Martinez, H Amrouch, MM Nafria, J Henkel IEEE Transactions on Circuits and Systems I: Regular Papers 65 (1), 293-306, 2017 | 49 | 2017 |
| Gate oxide wear-out and breakdown effects on the performance of analog and digital circuits R Fernández, J Martin-Martinez, R Rodriguez, M Nafría, XH Aymerich IEEE Transactions on Electron Devices 55 (4), 997-1004, 2008 | 48 | 2008 |
| Time-dependent variability related to BTI effects in MOSFETs: Impact on CMOS differential amplifiers J Martin-Martinez, R Rodriguez, M Nafria, X Aymerich IEEE Transactions on Device and Materials Reliability 9 (2), 305-310, 2009 | 45 | 2009 |
| A versatile CMOS transistor array IC for the statistical characterization of time-zero variability, RTN, BTI, and HCI J Diaz-Fortuny, J Martin-Martinez, R Rodriguez, R Castro-Lopez, E Roca, ... IEEE Journal of Solid-State Circuits 54 (2), 476-488, 2018 | 41 | 2018 |
| Reliability simulation for analog ICs: Goals, solutions, and challenges A Toro-Frías, P Martín-Lloret, J Martín-Martínez, R Castro-López, E Roca, ... Integration 55, 341-348, 2016 | 36 | 2016 |
| Designing guardbands for instantaneous aging effects VM van Santen, H Amrouch, J Martin-Martinez, M Nafria, J Henkel Proceedings of the 53rd Annual Design Automation Conference, 1-6, 2016 | 36 | 2016 |
| Channel-hot-carrier degradation and bias temperature instabilities in CMOS inverters J Martin-Martinez, S Gerardin, E Amat, R Rodriguez, M Nafria, X Aymerich, ... IEEE transactions on electron devices 56 (9), 2155-2159, 2009 | 30 | 2009 |
| Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM S Claramunt, Q Wu, M Maestro, M Porti, MB Gonzalez, J Martin-Martinez, ... Microelectronic Engineering 147, 335-338, 2015 | 29 | 2015 |
| Investigation of Filamentary Current Fluctuations Features in the High-Resistance State of Ni/HfO2-Based RRAM MB Gonzalez, J Martin-Martinez, M Maestro, MC Acero, M Nafria, ... IEEE Transactions on Electron Devices 63 (8), 3116-3122, 2016 | 28 | 2016 |
| Connecting the physical and application level towards grasping aging effects H Amrouch, J Martin-Martinez, VM van Santen, M Moras, R Rodriguez, ... 2015 IEEE International Reliability Physics Symposium, 3D. 1.1-3D. 1.8, 2015 | 28 | 2015 |
| Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages M Maestro, J Martin-Martinez, J Diaz, A Crespo-Yepes, MB Gonzalez, ... Microelectronic Engineering 147, 176-179, 2015 | 27 | 2015 |
| Analysis of resistive switching processes in TiN/Ti/HfO2/W devices to mimic electronic synapses in neuromorphic circuits G González-Cordero, M Pedro, J Martín-Martínez, MB González, ... Solid-State Electronics 157, 25-33, 2019 | 26 | 2019 |
| Flexible setup for the measurement of CMOS time-dependent variability with array-based integrated circuits J Diaz-Fortuny, P Saraza-Canflanca, R Castro-Lopez, E Roca, ... IEEE Transactions on Instrumentation and Measurement 69 (3), 853-864, 2019 | 26 | 2019 |
| New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM M Maestro, J Diaz, A Crespo-Yepes, MB Gonzalez, J Martin-Martinez, ... Solid-State Electronics 115, 140-145, 2016 | 26 | 2016 |
| Power-efficient noise-induced reduction of ReRAM cell’s temporal variability effects V Ntinas, A Rubio, GC Sirakoulis, ES Aguilera, M Pedro, A Crespo-Yepes, ... IEEE Transactions on Circuits and Systems II: Express Briefs 68 (4), 1378-1382, 2020 | 25 | 2020 |
