| Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode PRS Reddy, V Janardhanam, KH Shim, VR Reddy, SN Lee, SJ Park, ... Vacuum 171, 109012, 2020 | 77 | 2020 |
| Domains and domain dynamics in fluorite structured ferroelectrics MHP Dong Hyun Lee, Younghwan Lee, Kun Yang, Ju Yong Park, Se Hyun Kim ... Applied Physics Reviews 8, 021312, 2021 | 68 | 2021 |
| Microstructural, electrical and carrier transport properties of Au/NiO/n-GaN heterojunction with a nickel oxide interlayer VR Reddy, PRS Reddy, IN Reddy, CJ Choi RSC advances 6 (107), 105761-105770, 2016 | 64 | 2016 |
| A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials–device integration perspective JY Park, K Yang, DH Lee, SH Kim, Y Lee, PR Reddy, JL Jones, MH Park Journal of Applied Physics 128 (24), 2020 | 63 | 2020 |
| Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer V Manjunath, VR Reddy, PRS Reddy, V Janardhanam, CJ Choi Current Applied Physics 17 (7), 980-988, 2017 | 47 | 2017 |
| An advanced nano-sticks & flake-type architecture of manganese-cobalt oxide as an effective electrode material for supercapacitor applications HJ Kim, B Naresh, IH Cho, JS Bak, SA Hira, PRS Reddy, TNV Krishna, ... Journal of Energy Storage 40, 102702, 2021 | 41 | 2021 |
| Structural, Chemical and Electrical Properties of Au/La2O3/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer SNLCJC M. Uma, N. Balaram, P. R. Sekhar Reddy, V. Janardhanam, V. Rajagopal ... Journal of ELECTRONIC MATERIALS, 2019 | 40 | 2019 |
| CoCu 2 O 4 nanoflowers architecture as an electrode material for battery type supercapacitor with improved electrochemical performance SK Young-Seok Lee, Yedluri Anil Kumar, Sangaraju Sambasivam, Shamim Ahmed ... Nano-Structures & Nano-Objects 24, 100618, 2020 | 38 | 2020 |
| Modification of Schottky barrier properties of Ti/p-type InP Schottky diode by polyaniline (PANI) organic interlayer PR Reddy, V Janardhanam, I Jyothi, SH Yuk, VR Reddy, JC Jeong, ... JSTS: Journal of Semiconductor Technology and Science 16 (5), 664-674, 2016 | 32 | 2016 |
| Microstructural, chemical states and electrical properties of Au/CuO/n-InP heterojunction with a cupric oxide interlayer N Balaram, VR Reddy, PRS Reddy, V Janardhanam, CJ Choi Vacuum 152, 15-24, 2018 | 27 | 2018 |
| Double Gaussian barrier distribution of permalloy (Ni0. 8Fe0. 2) Schottky contacts to n-type GaN V Janardhanam, I Jyothi, PRS Reddy, J Cho, JM Cho, CJ Choi, SN Lee, ... Superlattices and Microstructures 120, 508-516, 2018 | 19 | 2018 |
| Microstructural and electrical properties of Al/n-type Si Schottky diodes with Au-CuPc nanocomposite films as interlayer PRS Reddy, V Janardhanam, I Jyothi, HS Chang, SN Lee, MS Lee, ... Superlattices and Microstructures 111, 506-517, 2017 | 19 | 2017 |
| Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction PRS Reddy, V Janardhanam, I Jyothi, CS Harsha, VR Reddy, SN Lee, ... Applied Physics A 124, 1-10, 2018 | 16 | 2018 |
| Temperature dependent Schottky barrier characteristics of Al/n-type Si Schottky barrier diode with Au–Cu phthalocyanine interlayer CJC P. R. Sekhar Reddy, V.Janardhanam, Kyu-HwanShim, Sung-Nam Lee, A. Ashok ... Thin Solid Films 713, 138343, 2020 | 14 | 2020 |
| Schottky barrier parameters and low-frequency noise characteristics of Au/Ni contact to n-type β-Ga2O3 PRS Reddy, V Janardhanam, L Hoon-Ki, KH Shim, L Sung-Nam, ... Journal of Electronic materials 49 (1), 297-305, 2020 | 13 | 2020 |
| Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n‑Si (MPS)‑type Schottky Barrier Diodes PRSRVJVRRMHPCJ Choi2 Applied Physics A 127 (807), 1-12, 2021 | 12 | 2021 |
| Enhanced resistive switching properties of HfAlOx/ZrO2- based RRAM devices PRS Reddy Progress in Natural Science: Materials International 32 (5), 602-607, 2022 | 7 | 2022 |
| Study of Gate Leakage Current on AlGaN/GaN MOSHEMTs with Atomic Layer Deposited Al₂O₃ Gate Oxide K Ouduangvilai, HK Lee, V Janardhanam, PRS Reddy, CJ Choi, KH Shim JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 19 (6), 540-550, 2019 | 5 | 2019 |
| Schottky Barrier Parameters and Low-Frequency Noise Characteristics of Au/Ni Contact to n-Type β-Ga2O3 PR Sekhar Reddy, V Janardhanam, HK Lee, KH Shim, SN Lee, ... Journal of Electronic Materials 49, 297-305, 2020 | 3 | 2020 |
| A review of transforming neuromorphic computing with 2D material memtransistors PRS Reddy Micromaterials and Interfaces 2 (1), 1-15, 2024 | | 2024 |
Chel-Jong ChoiJeonbuk National University在 jbnu.ac.kr 的电子邮件经过验证
