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Qinghua Zhao
Qinghua Zhao
Instituto de Ciencias Materiales de Madrid (ICMM/CSIC)
在 mail.nwpu.edu.cn 的电子邮件经过验证
标题
引用次数
引用次数
年份
The role of traps in the photocurrent generation mechanism in thin InSe photodetectors
Q Zhao, W Wang, F Carrascoso-Plana, W Jie, T Wang, ...
Materials horizons 7 (1), 252-262, 2020
2002020
Microwatts continuous-wave pumped second harmonic generation in few-and mono-layer GaSe
XT Gan, CY Zhao, SQ Hu, T Wang, Y Song, J Li, QH Zhao, WQ Jie, ...
Light: Science & Applications 7 (1), 17126-17126, 2018
932018
Thickness-induced structural phase transformation of layered gallium telluride
Q Zhao, T Wang, Y Miao, F Ma, Y Xie, X Ma, Y Gu, J Li, J He, B Chen, S Xi, ...
Physical Chemistry Chemical Physics 18 (28), 18719-18726, 2016
932016
InSe: a two-dimensional semiconductor with superior flexibility
Q Zhao, R Frisenda, T Wang, A Castellanos-Gomez
Nanoscale 11 (20), 9845-9850, 2019
862019
Toward air stability of thin GaSe devices: avoiding environmental and laser‐induced degradation by encapsulation
Q Zhao, R Frisenda, P Gant, D Perez de Lara, C Munuera, ...
Advanced Functional Materials 28 (47), 1805304, 2018
632018
InSe Schottky diodes based on van der Waals contacts
Q Zhao, W Jie, T Wang, A Castellanos‐Gomez, R Frisenda
Advanced Functional Materials 30 (24), 2001307, 2020
602020
An inexpensive system for the deterministic transfer of 2D materials
Q Zhao, T Wang, YK Ryu, R Frisenda, A Castellanos-Gomez
Journal of Physics: Materials 3 (1), 016001, 2020
472020
Gate‐Switchable Photovoltaic Effect in BP/MoTe2 van der Waals Heterojunctions for Self‐Driven Logic Optoelectronics
S Hu, J Xu, Q Zhao, X Luo, X Zhang, T Wang, W Jie, Y Cheng, R Frisenda, ...
Advanced Optical Materials 9 (5), 2001802, 2021
352021
High-quality GaSe single crystal grown by the Bridgman method
T Wang, J Li, Q Zhao, Z Yin, Y Zhang, B Chen, Y Xie, W Jie
Materials 11 (2), 186, 2018
322018
A system for the deterministic transfer of 2D materials under inert environmental conditions
P Gant, F Carrascoso, Q Zhao, YK Ryu, M Seitz, F Prins, R Frisenda, ...
2D Materials 7 (2), 025034, 2020
272020
Giant piezoresistive effect and strong bandgap tunability in ultrathin InSe upon biaxial strain
Q Zhao, T Wang, R Frisenda, A Castellanos‐Gomez
Advanced Science 7 (20), 2001645, 2020
262020
Passivation of layered gallium telluride by double encapsulation with graphene
E Mercado, Y Zhou, Y Xie, Q Zhao, H Cai, B Chen, W Jie, S Tongay, ...
ACS omega 4 (19), 18002-18010, 2019
222019
Reconfigurable InSe electronics with van der Waals integration
S Hu, X Luo, J Xu, Q Zhao, Y Cheng, T Wang, W Jie, ...
Advanced Electronic Materials 8 (5), 2101176, 2022
202022
Community composition modifies direct and indirect effects of pesticides in freshwater food webs
Q Zhao, F De Laender, PJ Van den Brink
Science of the total environment 739, 139531, 2020
202020
Multiple Optical Frequency Conversions in Few‐Layer GaSe Assisted by a Photonic Crystal Cavity
L Fang, Q Yuan, H Fang, X Gan, J Li, T Wang, Q Zhao, W Jie, J Zhao
Advanced Optical Materials 6 (22), 1800698, 2018
202018
Integrating van der Waals materials on paper substrates for electrical and optical applications
W Zhang, Q Zhao, C Munuera, M Lee, E Flores, JEF Rodrigues, JR Ares, ...
Applied Materials Today 23, 101012, 2021
192021
Thickness identification of thin InSe by optical microscopy methods
Q Zhao, S Puebla, W Zhang, T Wang, R Frisenda, A Castellanos-Gomez
Advanced Photonics Research 1 (2), 2000025, 2020
172020
ε-InSe single crystals grown by a horizontal gradient freeze method
M Sun, W Wang, Q Zhao, X Gan, Y Sun, W Jie, T Wang
CrystEngComm 22 (45), 7864-7869, 2020
172020
Lattice vibration of layered GaTe single crystals
T Wang, Q Zhao, Y Miao, F Ma, Y Xie, W Jie
Crystals 8 (2), 74, 2018
122018
Unusual deformation and fracture in gallium telluride multilayers
Y Zhou, S Zhou, P Ying, Q Zhao, Y Xie, M Gong, P Jiang, H Cai, B Chen, ...
The journal of physical chemistry letters 13 (17), 3831-3839, 2022
102022
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