| Anomalous moment and anisotropy behavior in Fe 3 O 4 films DT Margulies, FT Parker, FE Spada, RS Goldman, J Li, R Sinclair, ... Physical Review B 53 (14), 9175, 1996 | 511 | 1996 |
| Growth, disorder, and physical properties of ZnSnN2 N Feldberg, JD Aldous, WM Linhart, LJ Phillips, K Durose, PA Stampe, ... Applied Physics Letters 103 (4), 2013 | 150 | 2013 |
| Effects of GaAs substrate misorientation on strain relaxation in InxGa1− xAs films and multilayers RS Goldman, KL Kavanagh, HH Wieder, SN Ehrlich, RM Feenstra Journal of applied physics 83 (10), 5137-5149, 1998 | 139 | 1998 |
| Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi G Vardar, SW Paleg, MV Warren, M Kang, S Jeon, RS Goldman Applied Physics Letters 102 (4), 2013 | 94 | 2013 |
| Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots B Lita, RS Goldman, JD Phillips, PK Bhattacharya Applied physics letters 74 (19), 2824-2826, 1999 | 93 | 1999 |
| Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting M Tabbal, T Kim, JM Warrender, MJ Aziz, BL Cardozo, RS Goldman Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 87 | 2007 |
| Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots B Lita, RS Goldman, JD Phillips, PK Bhattacharya Applied Physics Letters 75 (18), 2797-2799, 1999 | 81 | 1999 |
| Room-temperature epitaxial electrodeposition of single-crystalline germanium nanowires at the wafer scale from an aqueous solution E Fahrenkrug, J Gu, S Jeon, PA Veneman, RS Goldman, S Maldonado Nano letters 14 (2), 847-852, 2014 | 67 | 2014 |
| Mechanisms of nitrogen incorporation in GaAsN alloys M Reason, HA McKay, W Ye, S Hanson, RS Goldman, V Rotberg Applied physics letters 85 (10), 1692-1694, 2004 | 65 | 2004 |
| Atomic‐scale structure and electronic properties of GaN/GaAs superlattices RS Goldman, RM Feenstra, BG Briner, ML O’steen, RJ Hauenstein Applied physics letters 69 (24), 3698-3700, 1996 | 65 | 1996 |
| Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers C Lavoie, T Pinnington, E Nodwell, T Tiedje, RS Goldman, KL Kavanagh, ... Applied physics letters 67 (25), 3744-3746, 1995 | 61 | 1995 |
| Investigation of the influence of a writing-to-learn assignment on student understanding of polymer properties SA Finkenstaedt-Quinn, AS Halim, TG Chambers, A Moon, RS Goldman, ... Journal of Chemical Education 94 (11), 1610-1617, 2017 | 57 | 2017 |
| Evolution of structural and electronic properties of highly mismatched InSb films X Weng, RS Goldman, DL Partin, JP Heremans Journal of Applied Physics 88 (11), 6276-6286, 2000 | 57 | 2000 |
| Generation and Propagation of a Picosecond Acoustic Pulse at a Buried Interface:<? format?> Time-Resolved X-Ray Diffraction Measurements SH Lee, AL Cavalieri, DM Fritz, MC Swan, RS Hegde, M Reason, ... Physical review letters 95 (24), 246104, 2005 | 51 | 2005 |
| Observation of surface-avoiding waves: a new class of extended states in periodic media M Trigo, TA Eckhause, M Reason, RS Goldman, R Merlin Physical review letters 97 (12), 124301, 2006 | 50 | 2006 |
| Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs (001) interfaces RS Goldman, HH Wieder, KL Kavanagh Applied physics letters 67 (3), 344-346, 1995 | 48 | 1995 |
| Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy H Chen, RM Feenstra, RS Goldman, C Silfvenius, G Landgren Applied Physics Letters 72 (14), 1727-1729, 1998 | 44 | 1998 |
| Influence of N interstitials on the electronic properties of GaAsN alloys Y Jin, RM Jock, H Cheng, Y He, AM Mintarov, Y Wang, C Kurdak, JL Merz, ... Applied Physics Letters 95 (6), 2009 | 43 | 2009 |
| Influence of N on the electronic properties of GaAsN alloy films and heterostructures M Reason, Y Jin, HA McKay, N Mangan, D Mao, RS Goldman, X Bai, ... Journal of Applied Physics 102 (10), 2007 | 42 | 2007 |
| Effects of buffer layers on the structural and electronic properties of InSb films X Weng, NG Rudawski, PT Wang, RS Goldman, DL Partin, J Heremans Journal of applied physics 97 (4), 2005 | 42 | 2005 |
