| CW lasing of current injection blue GaN-based vertical cavity surface emitting laser TC Lu, CC Kao, HC Kuo, GS Huang, SC Wang Applied Physics Letters 92 (14), 2008 | 361 | 2008 |
| GaN-based two-dimensional surface-emitting photonic crystal lasers with AlN∕ GaN distributed Bragg reflector TC Lu, SW Chen, LF Lin, TT Kao, CC Kao, P Yu, HC Kuo, SC Wang, ... Applied Physics Letters 92 (1), 2008 | 107 | 2008 |
| Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates XH Li, T Detchprohm, TT Kao, MM Satter, SC Shen, P Douglas Yoder, ... Applied Physics Letters 105 (14), 2014 | 96 | 2014 |
| Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Z Lochner, TT Kao, YS Liu, XH Li, M Satter, SC Shen, P Douglas Yoder, ... Applied Physics Letters 102 (10), 2013 | 96 | 2013 |
| Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN∕ GaN and Ta2O5∕ SiO2 distributed Bragg reflector CC Kao, YC Peng, HH Yao, JY Tsai, YH Chang, JT Chu, HW Huang, ... Applied Physics Letters 87 (8), 2005 | 93 | 2005 |
| Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate XH Li, TT Kao, MM Satter, YO Wei, S Wang, H Xie, SC Shen, PD Yoder, ... Applied Physics Letters 106 (4), 2015 | 63 | 2015 |
| Thermal characterization of gallium nitride pin diodes J Dallas, G Pavlidis, B Chatterjee, JS Lundh, M Ji, J Kim, T Kao, ... Applied Physics Letters 112 (7), 2018 | 59 | 2018 |
| Optically pumped GaN-based vertical cavity surface emitting lasers: Technology and characteristics SC Wang, TC Lu, CC Kao, JT Chu, GS Huang, HC Kuo, SW Chen, TT Kao, ... Japanese Journal of Applied Physics 46 (8S), 5397, 2007 | 59 | 2007 |
| Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition XH Li, S Wang, H Xie, YO Wei, TT Kao, MM Satter, SC Shen, ... physica status solidi (b) 252 (5), 1089-1095, 2015 | 56 | 2015 |
| Effects of a step-graded AlxGa1− xN electron blocking layer in InGaN-based laser diodes Y Zhang, TT Kao, J Liu, Z Lochner, SS Kim, JH Ryou, RD Dupuis, ... Journal of Applied Physics 109 (8), 2011 | 51 | 2011 |
| Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition XH Li, YO Wei, S Wang, H Xie, TT Kao, MM Satter, SC Shen, PD Yoder, ... Journal of Crystal Growth 414, 76-80, 2015 | 44 | 2015 |
| Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors TT Kao, YS Liu, M Satter, XH Li, Z Lochner, P Douglas Yoder, ... Applied Physics Letters 103 (21), 2013 | 44 | 2013 |
| Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors T Detchprohm, YS Liu, K Mehta, S Wang, H Xie, TT Kao, SC Shen, ... Applied Physics Letters 110 (1), 2017 | 38 | 2017 |
| Characteristics of GaN-based photonic crystal surface emitting lasers T Lu, SW Chen, TT Kao, TW Liu Applied Physics Letters 93 (11), 2008 | 38 | 2008 |
| The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta2O5--SiO2 distributed Bragg reflectors CC Kao, TC Lu, HW Huang, JT Chu, YC Peng, HH Yao, JY Tsai, TT Kao, ... IEEE photonics technology letters 18 (7), 877-879, 2006 | 36 | 2006 |
| Optically pumped vertical-cavity surface-emitting laser at 374.9 nm with an electrically conducting n-type distributed Bragg reflector YS Liu, AFMS Haq, K Mehta, TT Kao, S Wang, H Xie, SC Shen, PD Yoder, ... Applied Physics Express 9 (11), 111002, 2016 | 34 | 2016 |
| Working toward high-power GaN/InGaN heterojunction bipolar transistors SC Shen, RD Dupuis, Z Lochner, YC Lee, TT Kao, Y Zhang, HJ Kim, ... Semiconductor Science and Technology 28 (7), 074025, 2013 | 28 | 2013 |
| GaN/InGaN avalanche phototransistors SC Shen, TT Kao, HJ Kim, YC Lee, J Kim, MH Ji, JH Ryou, T Detchprohm, ... Applied Physics Express 8 (3), 032101, 2015 | 26 | 2015 |
| High-responsivity GaN/InGaN heterojunction phototransistors TT Kao, J Kim, T Detchprohm, RD Dupuis, SC Shen IEEE Photonics Technology Letters 28 (19), 2035-2038, 2016 | 24 | 2016 |
| Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition YS Liu, S Wang, H Xie, TT Kao, K Mehta, XJ Jia, SC Shen, PD Yoder, ... Applied Physics Letters 109 (8), 2016 | 23 | 2016 |
