| Skin‐like oxide thin‐film transistors for transparent displays HE Lee, S Kim, J Ko, HI Yeom, CW Byun, SH Lee, DJ Joe, TH Im, ... Advanced Functional Materials 26 (34), 6170-6178, 2016 | 133 | 2016 |
| High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition HI Yeom, JB Ko, G Mun, SHK Park Journal of Materials Chemistry C 4 (28), 6873-6880, 2016 | 103 | 2016 |
| 60‐3: Distinguished Paper: Oxide Vertical TFTs for the Application to the Ultra High Resolution Display HI Yeom, G Moon, Y Nam, JB Ko, SH Lee, J Choe, JH Choi, CS Hwang, ... SID Symposium Digest of Technical Papers 47 (1), 820-822, 2016 | 35 | 2016 |
| Highly stable, high mobility Al: SnZnInO back-channel etch thin-film transistor fabricated using PAN-based wet etchant for source and drain patterning SH Cho, JB Ko, MK Ryu, JH Yang, HI Yeom, SK Lim, CS Hwang, ... IEEE Transactions on Electron Devices 62 (11), 3653-3657, 2015 | 33 | 2015 |
| Inorganic Polymer Micropillar‐Based Solution Shearing of Large‐Area Organic Semiconductor Thin Films with Pillar‐Size‐Dependent Crystal Size JO Kim, JC Lee, MJ Kim, H Noh, HI Yeom, JB Ko, TH Lee, SH Ko Park, ... Advanced Materials 30 (29), 1800647, 2018 | 27 | 2018 |
| Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO2 gate insulator SI Cho, JB Ko, SH Lee, J Kim, SHK Park Journal of Alloys and Compounds 893, 162308, 2022 | 26 | 2022 |
| Effects of Al precursors on the characteristics of indium–aluminum oxide semiconductor grown by plasma-enhanced atomic layer deposition S Lee, M Kim, G Mun, J Ko, HI Yeom, GH Lee, B Shong, SHK Park ACS Applied Materials & Interfaces 13 (33), 40134-40144, 2021 | 24 | 2021 |
| Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors JB Ko, SH Lee, KW Park, SHK Park RSC advances 9 (62), 36293-36300, 2019 | 21 | 2019 |
| Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors JB Ko, HI Yeom, SHK Park IEEE Electron Device Letters 37 (1), 39-42, 2015 | 21 | 2015 |
| Self-assembled nano–lotus pod metasurface for light trapping N Lee, R Kim, JY Kim, JB Ko, SHK Park, SO Kim, ML Brongersma, J Shin ACS Photonics 8 (6), 1616-1622, 2021 | 8 | 2021 |
| 28‐1: Invited Paper: Effect of Channel Defining Layer on the Vertical Oxide TFTs for the Application to the Ultra High Resolution Display SH Lee, KH Lee, Y Nam, JB Ko, HI Yeom, CS Hwang, SHK Park SID Symposium Digest of Technical Papers 48 (1), 389-392, 2017 | 8 | 2017 |
| Effects of Hydroxyl Group in AlOx Gate Insulator on the Negative Bias Illumination Instability of In‐Ga‐Zn‐O Thin Film Transistors KW Park, G Jeon, S Lee, JB Ko, SHK Park physica status solidi (a) 216 (6), 1800737, 2019 | 7 | 2019 |
| Gate insulator for high mobility oxide TFT SHK Park, HO Kim, SH Cho, MK Ryu, JH Yang, JB Ko, CS Hwang ECS Transactions 64 (10), 123, 2014 | 5 | 2014 |
| Ultrathin, Flexible, and Transparent Oxide Thin‐Film Transistors by Delamination and Transfer Methods for Deformable Displays JB Ko, SH Lee, TI Lee, S Lee, J Kim, H Kim, TS Kim, SHK Park Advanced Materials Technologies 6 (11), 2100431, 2021 | 4 | 2021 |
| Buffer Layer Engineering of Indium Oxide Based Trench TFT for Ultra High Current Driving Y Im, SI Cho, J Kim, N Woo, JB Ko*, SHK Park* IEEE Electron Device Letters, 2023 | 3 | 2023 |
| Engineering a subnanometer interface tailoring layer for precise hydrogen incorporation and defect passivation for high-end oxide thin-film transistors JB Ko, SI Cho, SHK Park ACS Applied Materials & Interfaces 15 (40), 47799-47809, 2023 | 2 | 2023 |
| Contact Properties of a Low-resistance Aluminum-based Electrode with Metal Capping Layers in Vertical Oxide Thin-film Transistors S Jeon, KH Lee, S Lee, SI Cho, CS Hwang, JB Ko*, SHK Park* Journal of Materials Chemistry C, 2023 | 1 | 2023 |
| Oxide semiconductor based vertical TFT for ultra high-resolution backplane technology KH Lee, S Lee, HI Yeom, JB Ko, CS Hwang, SHK Park 25th International Display Workshops, IDW 2018, 280-282, 2018 | 1 | 2018 |
| Paper No S12. 4: Effect of Plasma Power of Plasma Enhanced Atomic Layer Deposition Process for Gate Insulator Deposition in Top‐Gate Thin‐Film Transistors JB Ko, HI Yeom, CS Hwang, S Cho, SHK Park SID Symposium Digest of Technical Papers 46 (S1), 54-54, 2015 | 1 | 2015 |
| Paper No S12. 2: High‐Mobility Indium Oxide Thin‐Film Transistors by Means of Plasma‐Enhanced Atomic Layer Deposition HI Yeom, JB Ko, CS Hwang, S Cho, SHK Park SID Symposium Digest of Technical Papers 46 (S1), 52-52, 2015 | 1 | 2015 |
Sang-Hee Ko ParkKAIST在 kaist.ac.kr 的电子邮件经过验证
