| State variable modeling of the power pin diode using an explicit approximation of semiconductor device equations: A novel approach H Morel, SH Gamal, JP Chante IEEE transactions on power electronics 9 (1), 112-120, 1994 | 62 | 1994 |
| Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions J Kunc, Y Hu, J Palmer, Z Guo, J Hankinson, SH Gamal, C Berger, ... Nano Letters 14 (9), 5170-5175, 2014 | 32 | 2014 |
| Ballistic transport in Schottky barrier carbon nanotube FETs MI Ossaimee, SH Gamal, KA Kirah, OA Omar Electronics Letters 44 (5), 336-337, 2008 | 31 | 2008 |
| Silicon carbide against silicon: a comparison in terms of physical properties, technology and electrical performance of power devices ML Locatelli, S Gamal Journal de Physique III 3 (6), 1101-1110, 1993 | 28 | 1993 |
| Gate dielectric constant engineering for suppression of ambipolar conduction in CNTFETs M Ossaimee, S Gamal, A Shaker Electronics Letters 51 (6), 503-504, 2015 | 24 | 2015 |
| Carrier lifetime measurement by ramp recovery of pin diodes SH Gamal, H Morel, JP Chante IEEE transactions on electron devices 37 (8), 1921-1924, 1990 | 17 | 1990 |
| Effect of addition of colloidal silica to films of polyimide, polyvinylpyridine, polystyrene, and polymethylmethacrylate nano-composites S Abdalla, F Al-Marzouki, A Obaid, S Gamal Materials 9 (2), 104, 2016 | 14 | 2016 |
| Stochastic macro material properties, through direct stochastic modeling of heterogeneous microstructures with randomness of constituent properties and topologies, by using … L Dong, SH Gamal, SN Atluri CMC: Computers, Materials & Continua 37 (1), 1-21, 2013 | 12 | 2013 |
| Semiconductor Materials for High Temperature Power Devices ML Locatelli, SH Gamal, JP Chante EPE Journal 4 (1), 43-46, 1994 | 9 | 1994 |
| A novel high-speed adder-subtractor design based on CNFET SI Sayed, SEDH Gamal International Journal of Applied Information Systems 10 (7), 29-32, 2016 | 8 | 2016 |
| Temperature dependence of carrier transport and electrical characteristics of Schottky‐barrier carbon nanotube field effect transistors M Ossaimee, M El Sabbagh, S Gamal Micro & Nano Letters 11 (2), 114-117, 2016 | 8 | 2016 |
| Scaling Issues for pin carbon nanotube FETs: a computational study M Ossaimee, S Gamal 2010 International Conference on Microelectronics, 240-243, 2010 | 7 | 2010 |
| Rapid and efficient method for numerical quantum mechanical simulation of gate-all-around nanowire transistors D Selim, S Gamal, W Fikry, O Abd-El Halim 2012 28th International Conference on Microelectronics Proceedings, 229-232, 2012 | 5 | 2012 |
| Simple and efficient Monte Carlo simulation of high-temperature hole transport in silicon and diamond SH Gamal, TS Al-Harbi Microelectronics journal 32 (4), 327-329, 2001 | 5 | 2001 |
| Investigation of Temperature Effects on Fast Gold Doped High Voltage Rectifiers SH Gamal, ML Locatelli, JP Chante EPE Journal 2 (2), 85-94, 1992 | 5 | 1992 |
| Enhancement of device characteristics of CNT-TFET: Role of electrostatic doping and work function engineering M Ossaimee, A Salah, SH Gamal, A Shaker, MS Salem Ain Shams Engineering Journal 14 (2), 101848, 2023 | 4 | 2023 |
| Action of colloidal silica films on different nano-composites S Abdalla, F Al-Marzouki, A Obaid, S Gamal Results in physics 6, 209-214, 2016 | 4 | 2016 |
| Quantization effects in gate-all-around nanowire MOSFETs: a numerical study S Gamal, D Selim 2010 27th International Conference on Microelectronics Proceedings, 105-108, 2010 | 2 | 2010 |
| A simple treatment of quantum dissipative transport in carbon nanotube transistors M Ossaimee, SH Gamal International Journal of Nanomanufacturing 4 (1-4), 283-289, 2009 | 2 | 2009 |
| An improved power diode model based on finite difference method A Shaker, A Zekry, OA Omar, S Gamal Proc. Second Int. Conf. on Advanced Computer Theory and Engineering (ICACTE …, 2009 | 2 | 2009 |
