Ligand-field helical luminescence in a 2D ferromagnetic insulator KL Seyler, D Zhong, DR Klein, S Gao, X Zhang, B Huang, ... Nature Physics 14 (3), 277-281, 2018 | 349 | 2018 |
Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted 1 T diamond-chain structures ReS 2 and ReSe 2 HX Zhong, S Gao, JJ Shi, L Yang Physical Review B 92 (11), 115438, 2015 | 160 | 2015 |
Emerging photoluminescence from the dark-exciton phonon replica in monolayer WSe2 Z Li, T Wang, C Jin, Z Lu, Z Lian, Y Meng, M Blei, S Gao, T Taniguchi, ... Nature communications 10 (1), 2469, 2019 | 155 | 2019 |
Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes JK Qin, PY Liao, M Si, S Gao, G Qiu, J Jian, Q Wang, SQ Zhang, S Huang, ... Nature electronics 3 (3), 141-147, 2020 | 150 | 2020 |
Interlayer coupling and gate-tunable excitons in transition metal dichalcogenide heterostructures S Gao, L Yang, CD Spataru Nano letters 17 (12), 7809-7813, 2017 | 120 | 2017 |
Dynamical Excitonic Effects in Doped Two-Dimensional Semiconductors S Gao, Y Liang, CD Spataru, L Yang Nano Letters 16 (9), 5568-5573, 2016 | 104 | 2016 |
Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor Z Qiu, M Trushin, H Fang, I Verzhbitskiy, S Gao, E Laksono, M Yang, ... Science Advances 5 (7), eaaw2347, 2019 | 99 | 2019 |
Renormalization of the quasiparticle band gap in doped two-dimensional materials from many-body calculations S Gao, L Yang Physical Review B 96 (15), 155410, 2017 | 95 | 2017 |
Radiative properties of quantum emitters in boron nitride from excited state calculations and Bayesian analysis S Gao, HY Chen, M Bernardi npj Computational Materials 7 (1), 85, 2021 | 43 | 2021 |
Anomalous Above-Gap Photoexcitations and Optical Signatures of Localized Charge Puddles in Monolayer Molybdenum Disulfide NJ Borys, ES Barnard, S Gao, K Yao, W Bao, A Buyanin, Y Zhang, ... ACS nano, 2017 | 38 | 2017 |
Dependence of excited-state properties of tellurium on dimensionality: From bulk to two dimensions to one dimensions Y Pan, S Gao, L Yang, J Lu Physical Review B 98 (8), 085135, 2018 | 33 | 2018 |
Vertical dielectric screening of few-layer van der Waals semiconductors J Koo, S Gao, H Lee, L Yang Nanoscale 9 (38), 14540-14547, 2017 | 27 | 2017 |
Coexistence of bulk-nodal and surface-nodeless cooper pairings in a superconducting Dirac semimetal XP Yang, Y Zhong, S Mardanya, TA Cochran, R Chapai, A Mine, J Zhang, ... Physical Review Letters 130 (4), 046402, 2023 | 10 | 2023 |
ScSI: A New Exfoliatable Semiconductor AM Ferrenti, MA Siegler, S Gao, N Ng, TM McQueen Chemistry of Materials 34 (12), 5443-5451, 2022 | 9 | 2022 |
Scroll wave meandering induced by phase difference in a three-dimensional excitable medium Z Yang, S Gao, Q Ouyang, H Wang Physical Review E 86 (5), 056209, 2012 | 7 | 2012 |
Edge-insensitive magnetism and half metallicity in graphene nanoribbons S Gao, L Yang Journal of Physics: Condensed Matter 30 (48), 48LT01, 2018 | 6 | 2018 |
Carbon-Related Quantum Emitter in Hexagonal Boron Nitride with Homogeneous Energy and 3-Fold Polarization D Zhong, S Gao, M Saccone, JR Greer, M Bernardi, S Nadj-Perge, ... Nano Letters, 2024 | 5 | 2024 |
First-principles electron-phonon interactions and electronic transport in large-angle twisted bilayer graphene S Gao, JJ Zhou, Y Luo, M Bernardi arXiv preprint arXiv:2402.19453, 2024 | 1 | 2024 |
Exciton spectra and layer decomposition in heterostructures H Zhong, S Gao, G Zhang, Z Xu, J Zhou, X Li, C Lu, Y Wang Physical Review B 108 (20), 205131, 2023 | 1 | 2023 |
Tunable Electronic and Optical Properties of Low-Dimensional Materials S Gao Washington University in St. Louis, 2018 | 1 | 2018 |