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Dr.Usha Chennoji
Dr.Usha Chennoji
Associate Professor
在 cambridge.edu.in 的电子邮件经过验证
标题
引用次数
引用次数
年份
An electrostatic analytical modeling of high-k stacked gate-all-around heterojunction tunnel FETs considering the depletion regions
C Usha, P Vimala
AEU-International Journal of Electronics and Communications 110, 152877, 2019
222019
Analytical drain current model for fully depleted surrounding gate TFET
C Usha, P Vimala
Journal of Nano Research 55, 75-81, 2018
162018
A tunneling FET exploiting in various structures and different models: A review
C Usha, P Vimala
2015 International Conference on Innovations in Information, Embedded and …, 2015
162015
A novel 2-D analytical model for the electrical characteristics of a gate-all-around heterojunction tunnel field-effect transistor including depletion regions
C Usha, P Vimala, TSA Samuel, MK Pandian
Journal of Computational Electronics 19, 1144-1153, 2020
152020
A new analytical approach to threshold voltage modeling of triple material gate-all-around heterojunction tunnel field effect transistor
C Usha, P Vimala
Indian Journal of Physics 95, 1365-1371, 2021
122021
Electrostatic characteristics of a high-k stacked gate-all-around heterojunction tunnel field-effect transistor using the superposition principle
C Usha, P Vimala, K Ramkumar, VN Ramakrishnan
Journal of Computational Electronics, 1-10, 2022
112022
Analytical drain current modeling and simulation of triple material gate-all-around heterojunction TFETs considering depletion regions
C Usha, P Vimala
Semiconductors 54, 1634-1640, 2020
52020
Modeling of Source Pocket Engineered PNPN Tunnel FET on High-K Buried Oxide (H-BOX) Substrate for Improved ON Current
P Vimala, M ul Haque, C Usha
Silicon 14 (16), 10383-10389, 2022
42022
An analytical modeling of conical gate-all-around tunnel field effect transistor
C Usha, P Vimala
Silicon 13 (8), 2563-2568, 2021
42021
A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure
C Usha, P Vimala
Journal of Semiconductors 40 (12), 122901, 2019
32019
A Study of Graphene FET for Better Performance
P Vimala, K Dharshan, S Harshith, VM Kishore, C Usha
2023 Second International Conference on Electrical, Electronics, Information …, 2023
12023
Impact Analysis and Simulation of Cylindrical Nanowire Biosensor
K Darshan, T Chaudhary, K Yashwant, P Vimala, KS Ranjan, C Usha
2021 IEEE Mysore Sub Section International Conference (MysuruCon), 285-288, 2021
12021
Influence of high-k material in gate engineering and in multi-gate field effect transistor devices
C Usha, P Vimala
High-k materials in multi-gate FET devices, 33-54, 2021
12021
Physics based model for potential distribution and threshold voltage of gate-all-around tunnel field effect transistor (GAA-TFET)
C Usha, P Vimala, VN Ramakrishnan
Materials Today: Proceedings 45, 4052-4057, 2021
12021
Impact of Material in Gate Engineering of Various TFET Architectures
P Vimala, C Usha
Handbook of Emerging Materials for Semiconductor Industry, 333, 2024
2024
Evolution of Heterojunction Tunnel Field Effect Transistor and its Advantages
C Usha, P Vimala
Tunneling Field Effect Transistors, 99-123, 2023
2023
Performance Analysis of Extended Gate FET pH Biosensor
D Bharadwaj, N Arpitha, M Siddarth, C Usha
2021 IEEE International Conference on Electronics, Computing and …, 2021
2021
Modelling Simulation Analysis of Gate Engineered heterojunction surrounding gate TFETs
C Usha
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