Martin S. Brandt 个人学术档案

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引用	13229	2695
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i10 指数	186	68

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Martin StutzmannProfessor (retired) of Experimental Physics, Walter Schottky Institut, TU München在 wsi.tum.de 的电子邮件经过验证
Hans HüblWalther-Meissner-Institut, Bayerische Akademie der Wissenschaften在 wmi.badw.de 的电子邮件经过验证
Rudolf GrossTechnische Universität München在 wmi.badw.de 的电子邮件经过验证
Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität Freiburg在 inatech.uni-freiburg.de 的电子邮件经过验证
Felix HoehneWalter-Schottky Institut, TU München在 wsi.tum.de 的电子邮件经过验证
Manuel CardonaMax Planck Institut在 fkf.mpg.de 的电子邮件经过验证
Carlos F. O. Graeff FRSC (ORCID:000...Professor Titular do DFM-FC, Universidade Estadual Paulista-UNESP在 unesp.br 的电子邮件经过验证
Gerhard AbstreiterTU München, Walter Schottky Institut, Institute for Advanced Study在 wsi.tum.de 的电子邮件经过验证
Peter DeakProfessor of Physics, University of Bremen在 uni-bremen.de 的电子邮件经过验证
Jonathan J. FinleyProfessor of Semiconductor Quantum Nanoscience在 wsi.tum.de 的电子邮件经过验证
David P. FrankeQuTech, TU Delft在 wsi.tum.de 的电子邮件经过验证
Martin EickhoffInstitut für Festkörperphysik, Universität Bremen在 ifp.uni-bremen.de 的电子邮件经过验证
Stephan GeprägsSenior Scientist at Walther-Meissner-Institute, Bavarian Academy of Sciences and Humanities在 wmi.badw.de 的电子邮件经过验证
Andreas WaagTechnische Universität Braunschweig在 tu-braunschweig.de 的电子邮件经过验证
Ian D. SharpWalter Schottky Institut and Physik Department, Technische Universität München在 wsi.tum.de 的电子邮件经过验证
Jose A. GarridoICN2 - Catalan Institute of Nanoscience and Nanotechnology & ICREA在 icn2.cat 的电子邮件经过验证
Gabi SchierningUniversity of Duisburg-Essen在 uni-due.de 的电子邮件经过验证
Theodore D MoustakasBoston University, Electrical and Computer Engineering Department在 bu.edu 的电子邮件经过验证
Dominik HeissInfineon AG在 infineon.com 的电子邮件经过验证
Dane McCameyARC Centre of Excellence in Exciton Science, School of Physics, UNSW Sydney在 unsw.edu.au 的电子邮件经过验证

关注

Martin S. Brandt

apl. Professor für Experimentalphysik, Walter Schottky Institut, Technische Universität München

在 wsi.tum.de 的电子邮件经过验证 - 首页

Halbleiterphysik Spintronik magnetische Resonanz Punktdefekte


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
The origin of visible luminescencefrom “porous silicon”: A new interpretation MS Brandt, HD Fuchs, M Stutzmann, J Weber, M Cardona Solid State Communications 81 (4), 307-312, 1992	1031	1992
Black nonreflecting silicon surfaces for solar cells S Koynov, MS Brandt, M Stutzmann Applied Physics Letters 88 (20), 203107, 2006	579	2006
Structural and doping effects in the half-metallic double perovskite A 2 CrWO 6 (A= Sr, Ba, and Ca) JB Philipp, P Majewski, L Alff, A Erb, R Gross, T Graf, MS Brandt, J Simon, ... Physical Review B 68 (14), 144431, 2003	415	2003
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996	385	1996
Elastically driven ferromagnetic resonance in nickel thin films M Weiler, L Dreher, C Heeg, H Huebl, R Gross, MS Brandt, ... Physical review letters 106 (11), 117601, 2011	378	2011
Acoustically driven ferromagnetic resonance M Weiler, L Dreher, C Heeg, H Huebl, R Gross, MS Brandt, ... arXiv preprint arXiv:1009.5798, 2010	378*	2010
Surface acoustic wave driven ferromagnetic resonance in nickel thin films: Theory and experiment L Dreher, M Weiler, M Pernpeintner, H Huebl, R Gross, MS Brandt, ... Physical Review B 86 (13), 134415, 2012	333	2012
Scaling behavior of the spin pumping effect in ferromagnet-platinum bilayers FD Czeschka, L Dreher, MS Brandt, M Weiler, M Althammer, IM Imort, ... Physical review letters 107 (4), 046601, 2011	322	2011
Porous silicon and siloxene: Vibrational and structural properties HD Fuchs, M Stutzmann, MS Brandt, M Rosenbauer, J Weber, ... Physical Review B 48 (11), 8172, 1993	270	1993
The Mn 3+/2+ acceptor level in group III nitrides T Graf, M Gjukic, MS Brandt, M Stutzmann, O Ambacher Applied Physics Letters 81 (27), 5159-5161, 2002	267	2002
Method of separating two layers of material from one another and electronic components produced using this process M Kelly, O Ambacher, M Stutzmann, M Brandt, R Dimitrov, R Handschuh US Patent 6,559,075, 2003	255	2003
Siloxene: Chemical quantum confinement due to oxygen in a silicon matrix P Deák, M Rosenbauer, M Stutzmann, J Weber, MS Brandt Physical review letters 69 (17), 2531, 1992	240	1992
Hydrogenation of p‐type gallium nitride MS Brandt, NM Johnson, RJ Molnar, R Singh, TD Moustakas Applied physics letters 64 (17), 2264-2266, 1994	216	1994
Voltage controlled inversion of magnetic anisotropy in a ferromagnetic thin film at room temperature M Weiler, A Brandlmaier, S Geprägs, M Althammer, M Opel, C Bihler, ... New Journal of Physics 11 (1), 013021, 2009	205	2009
Electrical detection of coherent 31P spin quantum states AR Stegner, C Boehme, H Huebl, M Stutzmann, K Lips, MS Brandt Nature Physics 2 (12), 835-838, 2006	192	2006
Direct biofunctionalization of semiconductors: A survey M Stutzmann, JA Garrido, M Eickhoff, MS Brandt physica status solidi (a) 203 (14), 3424-3437, 2006	190	2006
Electronic transport in phosphorus-doped silicon nanocrystal networks AR Stegner, RN Pereira, K Klein, R Lechner, R Dietmueller, MS Brandt, ... Physical review letters 100 (2), 026803, 2008	170	2008
DX-behavior of Si in AlN R Zeisel, MW Bayerl, STB Goennenwein, R Dimitrov, O Ambacher, ... Physical Review B 61 (24), R16283, 2000	168	2000
Structural and magnetic properties of Mn5Ge3 clusters in a dilute magnetic germanium matrix C Bihler, C Jaeger, T Vallaitis, M Gjukic, MS Brandt, E Pippel, ... Applied Physics Letters 88 (11), 112506-112506, 2006	154	2006
Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation AR Stegner, RN Pereira, R Lechner, K Klein, H Wiggers, M Stutzmann, ... Physical Review B 80 (16), 165326, 2009	144	2009

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