| Lg= 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz HB Jo, DY Yun, JM Baek, JH Lee, TW Kim, DH Kim, T Tsutsumi, ... Applied Physics Express 12 (5), 054006, 2019 | 49 | 2019 |
| nm InAlAs/InGaAs High-Electron- Mobility Transistors With a g m_max of 3 S/mm and of 559 GHz HB Jo, JM Baek, DY Yun, SW Son, JH Lee, TW Kim, DH Kim, T Tsutsumi, ... IEEE Electron Device Letters 39 (11), 1640-1643, 2018 | 37 | 2018 |
| Impact of the source-to-drain spacing on the DC and RF characteristics of InGaAs/InAlAs high-electron mobility transistors DY Yun, HB Jo, SW Son, JM Baek, JH Lee, TW Kim, DH Kim, T Tsutsumi, ... IEEE Electron Device Letters 39 (12), 1844-1847, 2018 | 30 | 2018 |
| Lg = 19 nm In0.8Ga0.2As composite-channel HEMTs with fT = 738 GHz and fmax = 492 GHz HB Jo, SW Yun, JG Kim, DY Yun, IG Lee, DH Kim, TW Kim, SK Kim, J Yun, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.4. 1-8.4. 4, 2020 | 29 | 2020 |
| Sub-30-nm In0.8Ga0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics HB Jo, SW Yun, JG Kim, JM Baek, IG Lee, DH Kim, TW Kim, SK Kim, ... IEEE Transactions on Electron Devices 68 (4), 2010-2016, 2021 | 18 | 2021 |
| Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications WS Park, HB Jo, HJ Kim, SM Choi, JH Yoo, HS Jeong, S George, ... IEEE Transactions on Electron Devices 70 (4), 2081-2089, 2023 | 8 | 2023 |
| Extraction of effective mobility of In0. 8Ga0. 2As/In0. 52Al0. 48As quantum well high-electron-mobility transistors on InP substrate WS Park, JG Kim, SW Yun, HS Jeong, HB Jo, TW Kim, T Tsutsumi, ... Solid-State Electronics 197, 108446, 2022 | 7 | 2022 |
| Theoretical and experimental analysis of the source resistance components in In0.7Ga0.3As quantum-well high-electron-mobility transistors IG Lee, DH Ko, SW Yun, JG Kim, HB Jo, DH Kim, T Tsutsumi, H Sugiyama, ... Journal of the Korean Physical Society 78, 516-522, 2021 | 6 | 2021 |
| Terahertz In0.8 Ga0.2 As quantum-well HEMTs toward 6G applications WS Park, HB Jo, HJ Kim, SM Choi, JH Yoo, JH Kim, HS Jeong, S George, ... 2022 International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2022 | 5 | 2022 |
| InxGa1-xAs quantum-well high-electron-mobility transistors with a record combination of fT and fmax: From the mobility relevant to ballistic transport regimes SW Yun, HB Jo, JH Yoo, WS Park, HS Jeong, SM Choi, HJ Kim, S George, ... 2021 IEEE International Electron Devices Meeting, IEDM 2021, 11.3. 1-11.3. 4, 2021 | 5 | 2021 |
| Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets HB Jo, IG Lee, JM Baek, ST Lee, SM Choi, HJ Kim, HS Jeong, WS Park, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 4 | 2022 |
| Vertical InGaAs tunnel-field-effect transistors by an electro-plating fin formation technique JM Baek, HB Jo, DY Yun, IG Lee, C Lee, CS Shin, H Kim, DH Ko, TW Kim, ... Solid-State Electronics 164, 107681, 2020 | 4 | 2020 |
| Long-channel InAlAs/InGaAs/InAlAs single-quantum-well MISFETs with subthreshold swing of 61 mV/decade and effective mobility of 11 900 cm2 V− 1· s− 1 IG Lee, HB Jo, DY Yun, CS Shin, JH Lee, T Kim, DH Ko, DH Kim Applied Physics Express 12 (6), 064003, 2019 | 4 | 2019 |
| A New Methodology to Analyze Carrier Transport Properties for InxGa1−xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in … HJ Kim, JH Yoo, WS Park, SW Yun, HB Jo, IG Lee, TW Kim, T Tsutsumi, ... IEEE Electron Device Letters 44 (2), 229-232, 2022 | 3 | 2022 |
| Impact of Sulfur Passivation on Carrier Transport Properties of In0.7Ga0.3As Quantum-Well MOSFETs JG Kim, HB Jo, IG Lee, TW Kim, DH Kim IEEE Journal of the Electron Devices Society 9, 209-214, 2021 | 3 | 2021 |
| Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling JH Yoo, HB Jo, IG Lee, SM Choi, JM Baek, ST Lee, H Jang, MW Kong, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 1 | 2023 |
| On the universality of drain-induced-barrier-lowering in field-effect transistors SM Choi, HB Jo, DY Yun, JG Kim, WS Park, JM Baek, IG Lee, JK Shin, ... 2022 International Electron Devices Meeting (IEDM), 8.3. 1-8.3. 4, 2022 | 1 | 2022 |
| Physics-Based Analytical Channel Charge Model of InxGa1-xAs/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion … HS Jeong, WS Park, HB Jo, IG Lee, TW Kim, T Tsutsumi, H Sugiyama, ... IEEE Journal of the Electron Devices Society 10, 387-396, 2022 | 1 | 2022 |
| A unified method to extract the effective mobility in InGaAs metal-insulator-semiconductor field-effect-transistors using scattering-parameters TB Rho, HB Jo, TW Kim, DH Kim Solid-State Electronics 162, 107644, 2019 | 1 | 2019 |
| Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0. 52Al0. 48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate K Hyo-Jin, IG Lee, HB Jo, TB Rho, T Tsutsumi, H Sugiyama, H Matsuzaki, ... Electronics 12 (2), 259, 2023 | | 2023 |
