| An introduction to molecular electronics MC Petty, MR Bryce, D Bloor (No Title), 1995 | 621 | 1995 |
| Si/SiGe heterostructure parameters for device simulations L Yang, JR Watling, RCW Wilkins, M Borici, JR Barker, A Asenov, S Roy Semiconductor Science and Technology 19 (10), 1174, 2004 | 223 | 2004 |
| The quantum mechanical tunnelling time problem re-visited S Collins, D Lowe, JR Barker Journal of Physics C Solid State Physics 20, 6213, 1987 | 221 | 1987 |
| Quantum transport theory of high-field conduction in semiconductors JR Barker Journal of Physics C: Solid State Physics 6 (17), 2663-2685, 1973 | 217 | 1973 |
| Semiconductor device modelling R Baets, J Barker, JA Barnard, TM Barton, ME Clarke, A Cappy, ... Springer Science & Business Media, 2012 | 194 | 2012 |
| A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs A Martinez, M Bescond, JR Barker, A Svizhenko, MP Anantram, C Millar, ... IEEE Transactions on Electron Devices 54 (9), 2213-2222, 2007 | 174 | 2007 |
| Self-scattering path variable formulation of high field time dependent quantum kinetic equations for semiconductor transport in the finite collision duration regime JR Barker, DK Ferry Physical Review Letters 42, 1775, 1979 | 174 | 1979 |
| Physics of nonlinear transport in semiconductors DK Ferry, JR Barker, C Jacobini Springer Science & Business Media, 2012 | 161 | 2012 |
| On the physics and modeling of small semiconductor devices - I JR Barker, DK Ferry Solid State Electronics 23, 519-530, 1980 | 159 | 1980 |
| The oscillatory structure of the magnetophonon effect. I. Transverse configuration JR Barker Journal of Physics C: Solid State Physics 5 (13), 1657, 1972 | 142 | 1972 |
| The oscillatory structure of the magnetophonon effect JR Barker Journal of Physics C 5, 1657-1674, 1972 | 142 | 1972 |
| The oscillatory structure of the magnetophonon effect. I. Transverse configuration JR Barker Journal of Physics C: Solid State Physics 5 (13), 1657-1674, 1972 | 142 | 1972 |
| On the physics and modeling of small semiconductor devices —II: The very small device JR Barker, DK Ferry Solid State Electronics 23 (6), 531-544, 1980 | 101 | 1980 |
| A dynamic analysis of resonant tunnelling S Collins, D Lowe, JR Barker Journal of Physics C: Solid State Physics 20, 6233, 1987 | 96 | 1987 |
| Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors A Martinez, M Aldegunde, N Seoane, AR Brown, JR Barker, A Asenov IEEE Transactions on Electron Devices 58 (8), 2209-2217, 2011 | 84 | 2011 |
| High field collision rates in polar semiconductors JR Barker Solid State Electronics 21, 267-271, 1978 | 84 | 1978 |
| Current variability in Si nanowire MOSFETs due to random dopants in the source/drain regions: A fully 3-D NEGF simulation study N Seoane, A Martinez, AR Brown, JR Barker, A Asenov IEEE Transactions on electron devices 56 (7), 1388-1395, 2009 | 82 | 2009 |
| Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations M Aldegunde, A Martinez, JR Barker IEEE Electron Device Letters 33, 194-196, 2012 | 79 | 2012 |
| Modal analysis of transport through quantum point contacts using realistic potentials MJ Laughton, JR Barker, JA Nixon, JH Davies Physical Review B, Condensed Matter 44 (3), 1150-1153, 1991 | 75 | 1991 |
| Hot electron quantum magneto-transport JR Barker Solid-State Electronics 21, 197-214, 1978 | 67 | 1978 |
a asenovThe University of Glasgow在 glasgow.ac.uk 的电子邮件经过验证
