| An anomalous Hall effect in altermagnetic ruthenium dioxide Z Feng, X Zhou, L Šmejkal, L Wu, Z Zhu, H Guo, R González-Hernández, ... Nature Electronics 5 (11), 735-743, 2022 | 179* | 2022 |
| A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields H Yan, Z Feng, S Shang, X Wang, Z Hu, J Wang, Z Zhu, H Wang, Z Chen, ... Nature nanotechnology 14 (2), 131-136, 2019 | 170 | 2019 |
| Electric‐field‐controlled antiferromagnetic spintronic devices H Yan, Z Feng, P Qin, X Zhou, H Guo, X Wang, H Chen, X Zhang, H Wu, ... Advanced Materials 32 (12), 1905603, 2020 | 128 | 2020 |
| Antiferromagnetic piezospintronics Z Liu, Z Feng, H Yan, X Wang, X Zhou, P Qin, H Guo, R Yu, C Jiang Advanced Electronic Materials 5 (7), 1900176, 2019 | 86 | 2019 |
| Noncollinear spintronics and electric-field control: a review PX Qin, H Yan, XN Wang, ZX Feng, HX Guo, XR Zhou, HJ Wu, X Zhang, ... Rare Metals 39, 95-112, 2020 | 61 | 2020 |
| Integration of the noncollinear antiferromagnetic metal Mn3Sn onto ferroelectric oxides for electric-field control X Wang, Z Feng, P Qin, H Yan, X Zhou, H Guo, Z Leng, W Chen, Q Jia, ... Acta Materialia 181, 537-543, 2019 | 47 | 2019 |
| Anomalous Hall effect, robust negative magnetoresistance, and memory devices based on a noncollinear antiferromagnetic metal P Qin, Z Feng, X Zhou, H Guo, J Wang, H Yan, X Wang, H Chen, X Zhang, ... ACS nano 14 (5), 6242-6248, 2020 | 44 | 2020 |
| Giant piezospintronic effect in a noncollinear antiferromagnetic metal H Guo, Z Feng, H Yan, J Liu, J Zhang, X Zhou, P Qin, J Cai, Z Zeng, ... Advanced Materials 32 (26), 2002300, 2020 | 39 | 2020 |
| Absence of superconductivity in Nd0.8Sr0.2NiOx thin films without chemical reduction XR Zhou, ZX Feng, PX Qin, H Yan, S Hu, HX Guo, XN Wang, HJ Wu, ... Rare Metals 39, 368-374, 2020 | 34 | 2020 |
| Nonvolatile electric control of the anomalous Hall effect in an ultrathin magnetic metal Z Feng, H Yan, X Wang, H Guo, P Qin, X Zhou, Z Chen, H Wang, Z Jiao, ... Advanced Electronic Materials 6 (2), 1901084, 2020 | 16 | 2020 |
| Anomalous Hall effect in antiferromagnetic Cr thin films H Chen, Z Feng, H Yan, P Qin, X Zhou, H Guo, X Wang, H Wu, X Zhang, ... Physical Review B 104 (6), 064428, 2021 | 13 | 2021 |
| A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity Z Feng, P Qin, Y Yang, H Yan, H Guo, X Wang, X Zhou, Y Han, J Yi, D Qi, ... Acta Materialia 204, 116516, 2021 | 13 | 2021 |
| Fabrication and characterization of epitaxial ferrimagnetic Mn3Ga thin films with perpendicular magnetic anisotropy H Guo, Z Feng, P Qin, H Yan, X Zhou, S Hu, X Wang, X Zhang, H Wu, ... Emergent Materials 4, 589-595, 2021 | 5 | 2021 |
| Realization and Control of Bulk and Surface Modes in 3D Nanomagnonic Networks by Additive Manufacturing of Ferromagnets H Guo, AJM Deenen, M Xu, M Hamdi, D Grundler Advanced Materials, 2303292, 2023 | 3 | 2023 |
| Publisher Correction: An anomalous Hall effect in altermagnetic ruthenium dioxide Z Feng, X Zhou, L Šmejkal, L Wu, Z Zhu, H Guo, R González-Hernández, ... Nature Electronics 5 (12), 904-904, 2022 | | 2022 |
| Room-Temperature Ferromagnetism and Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in BaSnO3 Z Feng, P Qin, Y Yang, H Yan, H Guo, X Wang, X Zhou, Y Han, J Yi, D Qi, ... arXiv e-prints, arXiv: 2011.13106, 2020 | | 2020 |
| Antiferromagnetic Spintronics: Electric‐Field‐Controlled Antiferromagnetic Spintronic Devices (Adv. Mater. 12/2020) H Yan, Z Feng, P Qin, X Zhou, H Guo, X Wang, H Chen, X Zhang, H Wu, ... Advanced Materials 32 (12), 2070091, 2020 | | 2020 |
