| High mobility in a stable transparent perovskite oxide HJ Kim, U Kim, TH Kim, HS Mun, BG Jeon, KT Hong, WJ Lee, C Ju, ... Applied Physics Express 5 (6), 061102, 2012 | 483 | 2012 |
| Physical properties of transparent perovskite oxides (Ba,La)SnO with high electrical mobility at room temperature HJ Kim, U Kim, TH Kim, J Kim, HM Kim, BG Jeon, WJ Lee, HS Mun, ... Physical Review B—Condensed Matter and Materials Physics 86 (16), 165205, 2012 | 373 | 2012 |
| All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3 U Kim, C Park, T Ha, YM Kim, N Kim, C Ju, J Park, J Yu, JH Kim, K Char APL materials 3 (3), 2015 | 147 | 2015 |
| High mobility field effect transistor based on BaSnO3 with Al2O3 gate oxide C Park, U Kim, CJ Ju, JS Park, YM Kim, K Char Applied Physics Letters 105 (20), 2014 | 124 | 2014 |
| Large effects of dislocations on high mobility of epitaxial perovskite Ba0. 96La0. 04SnO3 films H Mun, U Kim, H Min Kim, C Park, T Hoon Kim, H Joon Kim, K Hoon Kim, ... Applied Physics Letters 102 (25), 2013 | 116 | 2013 |
| Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3 U Kim, C Park, T Ha, R Kim, HS Mun, HM Kim, HJ Kim, TH Kim, N Kim, ... APL Materials 2 (5), 2014 | 78 | 2014 |
| High-mobility BaSnO3 thin-film transistor with HfO2 gate insulator YM Kim, C Park, U Kim, C Ju, K Char Applied Physics Express 9 (1), 011201, 2015 | 69 | 2015 |
| Conducting interface states at LaInO3/BaSnO3 polar interface controlled by Fermi level U Kim, C Park, YM Kim, J Shin, K Char Apl Materials 4 (7), 2016 | 48 | 2016 |
| Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3 HM Kim, U Kim, C Park, H Kwon, K Char Apl Materials 4 (5), 2016 | 43 | 2016 |
| High-k perovskite gate oxide BaHfO3 YM Kim, C Park, T Ha, U Kim, N Kim, J Shin, Y Kim, J Yu, JH Kim, K Char APL Materials 5 (1), 2017 | 41 | 2017 |
| Photoconductivity of transparent perovskite semiconductor BaSnO3 and SrTiO3 epitaxial thin films J Park, U Kim, K Char Applied Physics Letters 108 (9), 2016 | 32 | 2016 |
| High mobility field effect transistor of SnOx on glass using HfOx gate oxide C Ju, C Park, H Yang, U Kim, YM Kim, K Char Current Applied Physics 16 (3), 300-304, 2016 | 17 | 2016 |
| Nondestructive investigation of interface states in high‐k oxide films on Ge substrate using X‐ray absorption spectroscopy DY Cho, HS Jung, IH Yu, WG Park, S Cho, U Kim, SJ Oh, BG Park, ... physica status solidi (RRL)–Rapid Research Letters 6 (4), 181-183, 2012 | 4 | 2012 |
| BaSnO3: Thin film growth, transport properties, devices, and interfaces U Kim 서울대학교 대학원, 2015 | 2 | 2015 |
| Process proximity correction method and the computing device for the same SY Lee, MC Kang, US KIM, SH Yang, JY Lee US Patent 11,714,347, 2023 | 1 | 2023 |
| Colossal photoconductivity in transparent perovskite semiconductor BaSnO3 J Park, U Kim, K Char APS March Meeting Abstracts 2015, J5. 014, 2015 | 1 | 2015 |
| Optical proximity correction (opc) method, and methods of manufacturing mask using the opc method H Lee, W Cho, B Yenikaya, J Kim, KIM Useong US Patent App. 18/111,785, 2024 | | 2024 |
| Method of forming shape on mask based on deep learning, and mask manufacturing method using the method of forming the shape on mask KIM Useong, M Kang, SIM Woojoo US Patent 11,747,721, 2023 | | 2023 |
| Method of generating curve sub-resolution assist feature (sraf), method of verifying mask rule check (mrc), and method of manufacturing mask including method of generating the same W Cho, KIM Useong, H Lee US Patent App. 17/860,139, 2023 | | 2023 |
| Operating method of electronic device for semiconductor memory manufacture KIM Useong, B Yenikaya, M Lee, X Zhou, HJ Lee, WY Cho US Patent App. 17/510,652, 2023 | | 2023 |
