Silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial III-V material growth L Ding, C Zhang, TU Nærland, N Faleev, C Honsberg, MI Bertoni Energy Procedia 92, 617-623, 2016 | 39 | 2016 |
High-temperature polarization-free III-nitride solar cells with self-cooling effects X Huang, W Li, H Fu, D Li, C Zhang, H Chen, Y Fang, K Fu, SP DenBaars, ... ACS Photonics 6 (8), 2096-2103, 2019 | 35 | 2019 |
InGaN solar cells with regrown GaN homojunction tunnel contacts E Vadiee, EA Clinton, H McFavilen, AS Weidenbach, Z Engel, C Matthews, ... Applied Physics Express 11 (8), 082304, 2018 | 27 | 2018 |
Temperature dependence of GaSb and AlGaSb solar cells E Vadiee, Y Fang, C Zhang, AM Fischer, JJ Williams, EJ Renteria, ... Current Applied Physics 18 (6), 752-761, 2018 | 24 | 2018 |
Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy C Zhang, Y Kim, NN Faleev, CB Honsberg Journal of Crystal Growth 475, 83-87, 2017 | 21 | 2017 |
Investigation of defect creation in GaP/Si (0 0 1) epitaxial structures C Zhang, A Boley, N Faleev, DJ Smith, CB Honsberg Journal of Crystal Growth 503, 36-44, 2018 | 19 | 2018 |
Study of the interface in a GaP/Si heterojunction solar cell R Saive, H Emmer, CT Chen, C Zhang, C Honsberg, H Atwater IEEE Journal of Photovoltaics 8 (6), 1568-1576, 2018 | 19 | 2018 |
Carrier-selective contact GaP/Si solar cells grown by molecular beam epitaxy C Zhang, E Vadiee, RR King, CB Honsberg Journal of Materials Research 33 (4), 414-423, 2018 | 17 | 2018 |
Hetero-emitter GaP/Si solar cells with high Si bulk lifetime C Zhang, NN Faleev, L Ding, M Boccard, M Bertoni, Z Holman, RR King, ... 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 1950-1953, 2016 | 17 | 2016 |
AlGaSb-based solar cells grown on GaAs: structural investigation and device performance E Vadiee, E Renteria, C Zhang, JJ Williams, A Mansoori, S Addamane, ... IEEE Journal of Photovoltaics 7 (6), 1795-1801, 2017 | 13 | 2017 |
Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells Y Kim, KY Ban, C Zhang, CB Honsberg Applied Physics Letters 107 (15), 2015 | 13 | 2015 |
A lattice-matched GaNP/Si three-terminal tandem solar cell Y Zou, C Zhang, C Honsberg, D Vasileska, R King, S Goodnick 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A …, 2018 | 12 | 2018 |
Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer C Zhang, K Alberi, C Honsberg, K Park Applied Surface Science 549, 149245, 2021 | 10 | 2021 |
On the source of silicon minority-carrier lifetime degradation during molecular beam heteroepitaxial growth of III-V materials L Ding, C Zhang, TU Nœrland, N Faleev, C Honsberg, MI Bertoni 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2048-2051, 2016 | 10 | 2016 |
Silicon nitride barrier layers mitigate minority-carrier lifetime degradation in silicon wafers during simulated MBE growth of III–V layers C Zhang, L Ding, M Boccard, TU Nærland, N Faleev, S Bowden, ... IEEE Journal of Photovoltaics 9 (2), 431-436, 2019 | 9 | 2019 |
Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer Y Kim, KY Ban, C Zhang, JO Kim, SJ Lee, CB Honsberg Applied Physics Letters 108 (10), 2016 | 9 | 2016 |
High Efficiency GaAs-based Solar Cells Simulation and Fabrication C Zhang Arizona State University, 2014 | 7 | 2014 |
Electronic structure of GaP/Si (001) heterojunctions and the role of hydrogen passivation RV Meidanshahi, C Zhang, Y Zou, C Honsberg, SM Goodnick Progress in Photovoltaics: Research and Applications 27 (8), 724-732, 2019 | 6 | 2019 |
Developing high performance GaP/Si heterojunction solar cells C Zhang, E Vadiee, S Dahal, RR King, CB Honsberg JoVE (Journal of Visualized Experiments), e58292, 2018 | 5 | 2018 |
Low concentrated photovoltaics for III-V solar cells C Zhang, E Armour, R King, C Honsberg 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A …, 2018 | 5 | 2018 |