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LORENZO BENATTI
LORENZO BENATTI
在 unimore.it 的电子邮件经过验证
标题
引用次数
引用次数
年份
Scaled, Ferroelectric Memristive Synapse for Back‐End‐of‐Line Integration with Neuromorphic Hardware
L Bégon‐Lours, M Halter, FM Puglisi, L Benatti, DF Falcone, Y Popoff, ...
Advanced Electronic Materials 8 (6), 2101395, 2022
252022
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
L Bégon-Lours, M Halter, M Sousa, Y Popoff, DD Pineda, DF Falcone, ...
Neuromorphic Computing and Engineering 2 (2), 024001, 2022
142022
A hybrid cmos-memristor spiking neural network supporting multiple learning rules
D Florini, D Gandolfi, J Mapelli, L Benatti, P Pavan, FM Puglisi
IEEE Transactions on Neural Networks and Learning Systems 35 (4), 5117-5129, 2022
112022
Combining experiments and a novel small signal model to investigate the degradation mechanisms in ferroelectric tunnel junctions
L Benatti, P Pavan, FM Puglisi
2022 IEEE International Reliability Physics Symposium (IRPS), P6-1-P6-5, 2022
42022
Understanding the reliability of ferroelectric tunnel junction operations using an advanced small-signal model
L Benatti, FM Puglisi
2021 IEEE International Integrated Reliability Workshop (IIRW), 1-6, 2021
42021
Impedance investigation of MIFM ferroelectric tunnel junction using a comprehensive small-signal model
L Benatti, FM Puglisi
IEEE Transactions on Device and Materials Reliability 22 (3), 332-339, 2022
32022
Ultra-low power logic in memory with commercial grade memristors and FPGA-based smart-IMPLY architecture
L Benatti, T Zanotti, P Pavan, FM Puglisi
Microelectronic Engineering 280, 112062, 2023
22023
Biologically plausible information propagation in a complementary metal-oxide semiconductor integrate-and-fire artificial neuron circuit with memristive synapses
L Benatti, T Zanotti, D Gandolfi, J Mapelli, FM Puglisi
Nano Futures 7 (2), 025003, 2023
22023
The role of defects and interface degradation on ferroelectric HZO capacitors aging
L Benatti, S Vecchi, M Pesic, FM Puglisi
2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023
22023
Impedance spectroscopy of ferroelectric capacitors and ferroelectric tunnel junctions
L Benatti, S Vecchi, FM Puglisi
2022 IEEE International Integrated Reliability Workshop (IIRW), 1-6, 2022
22022
Linking the intrinsic electrical response of ferroelectric devices to material properties by means of impedance spectroscopy
L Benatti, S Vecchi, FM Puglisi
IEEE Transactions on Device and Materials Reliability 23 (3), 309-316, 2023
12023
Information Transfer in Neuronal Circuits: From Biological Neurons to Neuromorphic Electronics
D Gandolfi, L Benatti, T Zanotti, GM Boiani, A Bigiani, FM Puglisi, ...
Intelligent Computing 3, 0059, 2024
2024
2023 Index IEEE Transactions on Device and Materials Reliability Vol. 23
A Amin, T An, S Ananiev, YE Aras, G Arutchelvan, RN Asli, Y Avenas, ...
IEEE Transactions on Device and Materials Reliability 23 (4), 2023
2023
Biologically Plausible Information Propagation in a CMOS Integrate-and-Fire Artificial Neuron Circuit with Memristive Synapses
L Benatti, T Zanotti, D Gandolfi, J Mapelli, FM Puglisi
NANO FUTURES 7 (2), 1-8, 2023
2023
2022 Index IEEE Transactions on Device and Materials Reliability Vol. 22
B Arunachalam, RN Asli, L Atzeni, T Aytug, H Aziza, N Bagga, Y Ban, ...
IEEE Transactions on Device and Materials Reliability 22 (4), 2022
2022
COMMERCIAL-GRADE PACKAGED RESISTIVE MEMORIES FOR ULTRA-LOW POWER LOGIC: CHARACTERIZATION AND PERFORMANCE EVALUATION
L BENATTI
2020
SPECIAL SECTION ON IIRW
L Benatti, S Vecchi, FM Puglisi
Optimization of the injection beam line at the Cooler Synchrotron COSY using Bayesian Optimization
L Benatti, T Zanotti, D Gandolfi
SPECIAL SECTION ON IIRW
FV Sharov, SJ Moxim, GS Haase, DR Hughart, CG McKay, PM Lenahan, ...
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