| Investigation of short channel effects in SOI MOSFET with 20 nm channel length by a β-Ga2O3 layer D Madadi, AA Orouji ECS Journal of Solid State Science and Technology 9 (4), 045002, 2020 | 27 | 2020 |
| Scattering mechanisms in β-Ga2O3 junctionless SOI MOSFET: investigation of electron mobility and short channel effects D Madadi, AA Orouji Materials Today Communications 26, 102044, 2021 | 25 | 2021 |
| β-Ga2O3 double gate junctionless FET with an efficient volume depletion region D Madadi, AA Orouji Physics Letters A 412, 127575, 2021 | 24 | 2021 |
| Investigation of tied double gate 4H–SiC junctionless FET in 7 nm channel length with a symmetrical dual p+ layer D Madadi, AA Orouji Physica E: Low-dimensional Systems and Nanostructures 126, 114450, 2021 | 23 | 2021 |
| New high-voltage and high-speed β-Ga2O3 MESFET with amended electric field distribution by an insulator layer D Madadi, AA Orouji The European Physical Journal Plus 135 (7), 1-12, 2020 | 23 | 2020 |
| A β-Ga₂O₃ MESFET to Amend the Carrier Distribution by Using a Tunnel Diode D Madadi, AA Orouji IEEE Transactions on Device and Materials Reliability 21 (1), 26-32, 2020 | 18 | 2020 |
| Investigation of 4H-SiC gate-all-around cylindrical nanowire junctionless MOSFET including negative capacitance and quantum confinements D Madadi, AA Orouji The European Physical Journal Plus 136 (7), 785, 2021 | 17 | 2021 |
| Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study D Madadi, S Mohammadi Discover Nano 18 (1), 37, 2023 | 15 | 2023 |
| Improvement of nanoscale SOI MOSFET heating effects by vertical Gaussian drain-source doping region D Madadi, AA Orouji, A Abbasi Silicon 13, 645-651, 2021 | 15 | 2021 |
| Physical analysis of β-Ga2O3 gate-all-around nanowire junctionless transistors: short-channel effects and temperature dependence A Motamedi, AA Orouji, D Madadi Journal of Computational Electronics 21 (1), 197-205, 2022 | 14 | 2022 |
| β-Ga2O3 Junctionless FET with an Ω Shape 4H-SiC Region in Accumulation Mode D Madadi Silicon 14 (13), 7595-7602, 2022 | 11 | 2022 |
| Realization of Double‐Gate Junctionless Field Effect Transistor Depletion Region for 6 nm Regime with an Efficient Layer M Bolokian, AA Orouji, A Abbasi, D Madadi physica status solidi (a) 219 (21), 2200214, 2022 | 10 | 2022 |
| High-performance α-FAPbI3 perovskite solar cells with an optimized interface energy band alignment by a Zn(O,S) electron transport layer D Madadi, I Gharibshahian, AA Orouji Journal of Materials Science: Materials in Electronics 34 (1), 51, 2023 | 9 | 2023 |
| Investigation of junctionless fin-FET characterization in deep cryogenic temperature: DC and RF analysis D Madadi IEEE Access 10, 130293-130301, 2022 | 8 | 2022 |
| Improvement of a novel SOI-MESFET with an embedded GaN layer for high-frequency operations M Khoorabeh, AA Orouji, D Madadi Silicon 14 (6), 2757-2764, 2022 | 8 | 2022 |
| Junction-less SOI FET with an Embedded p+ Layer: Investigation of DC, RF, and Negative Capacitance Characteristics D Madadi, S Mohammadi Silicon 15 (9), 3959-3968, 2023 | 5 | 2023 |
| An embedded β-Ga2O3 layer in a SOI-LDMOS to improve breakdown voltage F Gholipour, AA Orouji, D Madadi Journal of Computational Electronics 21 (1), 206-213, 2022 | 5 | 2022 |
| Achieving beyond 26.6% efficiency for graded bandgap perovskite solar cell: Theoretical study D Madadi Materials Chemistry and Physics 308, 128231, 2023 | 3 | 2023 |
| A New Technique for Improving Kink Effect in High-Voltage LDMOS Transistors: M-shape Drift Region F Gholipour, AA Orouji, D Madadi Silicon 14 (12), 7075-7082, 2022 | 3 | 2022 |
| Stacked Single‐Gate Silicon on Insulator 4H‐SiC Junctionless Field‐Effect Transistor with a Buried P‐Type 4H‐SiC Layer D Madadi, AA Orouji physica status solidi (a) 219 (11), 2100504, 2022 | 3 | 2022 |
Ali Asghar OroujiProfessor, Semnan University在 semnan.ac.ir 的电子邮件经过验证
