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Francois FOULON
Francois FOULON
Khalifa University
在 ku.ac.ae 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser
F Foulon, E Fogarassy, A Slaoui, C Fuchs, S Unamuno, P Siffert
Applied Physics A 45, 361-364, 1988
461988
Ultra-thin ionizing radiation detector and methods for making same
F Foulon, S Spirkovitch, L Babadjian
US Patent 6,259,099, 2001
342001
Excimer laser induced doping of phosphorus into silicon
A Slaoui, F Foulon, P Siffert
Journal of applied physics 67 (10), 6197-6201, 1990
281990
Argon-ion laser direct-write Al deposition from trialkylamine alane precursors
F Foulon, M Stuke
Applied Physics A 56, 283-289, 1993
231993
Laser‐projection‐patterned etching of GaAs in a chlorine atmosphere
F Foulon, M Green, FN Goodall, S De Unamuno
Journal of applied physics 71 (6), 2898-2907, 1992
221992
Optimazation of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser
F Foulon, A Slaoui, E Fogarassy, R Stuck, C Fuchs, P Siffert
Applied Surface Science 36 (1-4), 384-393, 1989
211989
Thin CVD diamond detectors with high charge collection efficiency
A Brambilla, D Tromson, P Bergonzo, C Mer, F Foulon
IEEE Transactions on Nuclear Science 49 (1), 277-280, 2002
182002
A new technique for the fabrication of thin silicon radiation detectors
F Foulon, L Rousseau, L Babadjian, S Spirkovitch, A Brambilla, ...
IEEE transactions on nuclear science 46 (3), 218-220, 1999
181999
Transfer of natural radionuclides from soil to Abu Dhabi date palms
P Raj, N Padiyath, N Semioshkina, F Foulon, AK Alkaabi, G Voigt, ...
Sustainability 14 (18), 11327, 2022
162022
ArF excimer laser doping of boron into silicon
F Foulon, A Slaoui, P Siffert
Applied Surface Science 43 (1-4), 333-339, 1989
151989
Conceptualization of arid region radioecology strategies for agricultural ecosystems of the United Arab Emirates (UAE)
P Raj, N Padiyath, N Semioshkina, Y Addad, F Foulon, D Francis, G Voigt
Science of The Total Environment 832, 154965, 2022
132022
Boron doping of silicon by excimer laser irradiation in a reactive atmosphere: the incorporation mechanism
A Slaoui, F Foulon, R Stuck, P Siffert
Applied Physics A 50, 479-484, 1990
121990
Photoabsorption of BCl3 Gas under pulsed ArF excimer laser irradiation
A Slaoui, F Foulon, C Fuchs, E Fogarassy, P Siffert
Applied Physics A 50, 317-320, 1990
121990
Remote laboratory for e-learning of systems on chip and their applications to nuclear and scientific instrumentation
ML Crespo, F Foulon, A Cicuttin, M Bogovac, C Onime, C Sisterna, ...
Electronics 10 (18), 2191, 2021
112021
Through‐wafer via fabrication in gallium arsenide by excimer laser projection patterned etching
F Foulon, M Green
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
111993
Surface and three-dimensional processing by laser chemical vapor deposition
O Lehmann, F Foulon, M Stuke
Excimer Lasers, 91-102, 1994
101994
KrF excimer laser projection patterned deposition of aluminum from triethylamine alane as adsorbate precursor
F Foulon, M Stuke
Applied physics letters 62 (18), 2173-2175, 1993
101993
Laser projection-patterned etching of (100) GaAs by gaseous HCl and CH3Cl
F Foulon, M Green
Applied Physics A 60, 377-381, 1995
91995
Excimer laser projection-patterned deposition of Al via photolytically driven decomposition of trialkylamine alane as adsorbate precursor
F Foulon, M Stuke
Applied Physics A 56, 267-273, 1993
81993
Laser and Particle Beam Chemical Processes on Surface
A Slaoui, F Foulon, M Blanconi
Ed's A. Wayane, GL Loper and TW Singmon,“Boron Doping of Silicon Using …, 1989
81989
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