| Compact modeling of perpendicular-magnetic-anisotropy double-barrier magnetic tunnel junction with enhanced thermal stability recording structure G Wang, Y Zhang, J Wang, Z Zhang, K Zhang, Z Zheng, JO Klein, ... IEEE Transactions on Electron Devices 66 (5), 2431-2436, 2019 | 55 | 2019 |
| Time-domain computing in memory using spintronics for energy-efficient convolutional neural network Y Zhang, J Wang, C Lian, Y Bai, G Wang, Z Zhang, Z Zheng, L Chen, ... IEEE Transactions on Circuits and Systems I: Regular Papers 68 (3), 1193-1205, 2021 | 52 | 2021 |
| Ferrimagnets for spintronic devices: From materials to applications Y Zhang, X Feng, Z Zheng, Z Zhang, K Lin, X Sun, G Wang, J Wang, J Wei, ... Applied Physics Reviews 10 (1), 2023 | 45 | 2023 |
| IEEE Electron G Wang, Y Zhang, Z Zhang, Z Zheng, K Zhang, J Wang, JO Klein, ... Device Lett, 1991 | 34 | 1991 |
| A self-matching complementary-reference sensing scheme for high-speed and reliable toggle spin torque MRAM J Wang, C Lian, Y Bai, G Wang, Z Zhang, Z Zheng, L Chen, K Lin, ... IEEE Transactions on Circuits and Systems I: Regular Papers 67 (12), 4247-4258, 2020 | 32 | 2020 |
| Rectified tunnel magnetoresistance device with high on/off ratio for in-memory computing K Zhang, K Cao, Y Zhang, Z Huang, W Cai, J Wang, J Nan, G Wang, ... IEEE Electron Device Letters 41 (6), 928-931, 2020 | 25 | 2020 |
| Reconfigurable bit-serial operation using toggle SOT-MRAM for high-performance computing in memory architecture J Wang, Y Bai, H Wang, Z Hao, G Wang, K Zhang, Y Zhang, W Lv, ... IEEE Transactions on Circuits and Systems I: Regular Papers 69 (11), 4535-4545, 2022 | 22 | 2022 |
| 3D ferrimagnetic device for multi-bit storage and efficient in-memory computing Z Zhang, Z Zheng, Y Zhang, J Sun, K Lin, K Zhang, X Feng, L Chen, ... IEEE Electron Device Letters 42 (2), 152-155, 2020 | 10 | 2020 |
| Efficient time-domain in-memory computing based on TST-MRAM J Wang, Y Zhang, C Lian, Y Bai, Z Huang, G Wang, K Zhang, Y Zhang, ... 2020 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2020 | 8 | 2020 |
| Ultrafast and energy-efficient ferrimagnetic XNOR logic gates for binary neural networks G Wang, Y Zhang, Z Zhang, Z Zheng, K Zhang, J Wang, JO Klein, ... IEEE Electron Device Letters 42 (4), 621-624, 2021 | 6 | 2021 |
| A computing-in-memory scheme with series bit-cell in STT-MRAM for efficient multi-bit analog multiplication Z Hao, Y Zhang, J Wang, H Wang, Y Bai, G Wang, W Zhao 2021 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 1-6, 2021 | 4 | 2021 |
| A novel in-memory computing scheme based on toggle spin torque MRAM Y Bai, Y Zhang, J Wang, G Wang, Z Zhang, Z Zheng, K Zhang, W Zhao Proceedings of the 2020 on Great Lakes Symposium on VLSI, 351-356, 2020 | 4 | 2020 |
| High speed and reliable Sensing Scheme with Three Voltages for STT-MRAM J Wang, Y Zhang, C Lian, G Wang, K Zhang, X Wu, Y Zhang, W Zhao 2019 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 1-6, 2019 | 2 | 2019 |
| Thermal stable and fast perpendicular shape anisotropy magnetic tunnel junction G Wang, Y Zhang, Z Huang, J Wang, K Zhang, Z Zhang, Y Zhang, W Zhao 2019 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 1-6, 2019 | 1 | 2019 |
| Emerging Spintronic Devices: From Ultra-High-Density Memory to Logic-In-Memory Y Zhang, G Wang, Z Huang, Z Zhang, J Wang, Y Zhang, W Zhao 2018 IEEE International Conference on Integrated Circuits, Technologies and …, 2018 | 1 | 2018 |
| An In-memory Highly Reconfigurable Logic Circuit Based on Diode-assisted Enhanced Magnetoresistance Device Z Huang, Y Zhang, K Zhang, Z Zhang, J Wang, Y Zhang, W Zhao Proceedings of the 2020 on Great Lakes Symposium on VLSI, 259-264, 2020 | | 2020 |
