| Red light emission by photoluminescence and electroluminescence from Eu-doped GaN J Heikenfeld, M Garter, DS Lee, R Birkhahn, AJ Steckl Applied Physics Letters 75 (9), 1189-1191, 1999 | 352 | 1999 |
| Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices AJ Steckl, JC Heikenfeld, DS Lee, MJ Garter, CC Baker, Y Wang, R Jones IEEE Journal of Selected Topics in Quantum Electronics 8 (4), 749-766, 2002 | 345 | 2002 |
| Method for improved growth of semipolar (Al, In, Ga, B) N JF Kaeding, DS Lee, M Iza, TJ Baker, H Sato, BA Haskell, JS Speck, ... US Patent 7,691,658, 2010 | 317 | 2010 |
| Blue emission from Tm-doped GaN electroluminescent devices AJ Steckl, M Garter, DS Lee, J Heikenfeld, R Birkhahn Applied physics letters 75 (15), 2184-2186, 1999 | 184 | 1999 |
| Spectral and time-resolved photoluminescence studies of Eu-doped GaN EE Nyein, U Hömmerich, J Heikenfeld, DS Lee, AJ Steckl, JM Zavada Applied physics letters 82 (11), 1655-1657, 2003 | 171 | 2003 |
| Multiple color capability from rare earth-doped gallium nitride AJ Steckl, J Heikenfeld, DS Lee, M Garter Materials Science and Engineering: B 81 (1-3), 97-101, 2001 | 132 | 2001 |
| Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN U Hömmerich, EE Nyein, DS Lee, J Heikenfeld, AJ Steckl, JM Zavada Materials Science and Engineering: B 105 (1-3), 91-96, 2003 | 116 | 2003 |
| Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique BO Jung, SY Bae, Y Kato, M Imura, DS Lee, Y Honda, H Amano CrystEngComm 16 (11), 2273-2282, 2014 | 101 | 2014 |
| Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu DS Lee, J Heikenfeld, R Birkhahn, M Garter, BK Lee, AJ Steckl Applied Physics Letters 76 (12), 1525-1527, 2000 | 101 | 2000 |
| Comparison study of ZnO-based quaternary TCO materials for photovoltaic application JS Jang, J Kim, U Ghorpade, HH Shin, MG Gang, SD Park, HJ Kim, ... Journal of Alloys and Compounds 793, 499-504, 2019 | 92 | 2019 |
| Temperature dependence of energy transfer mechanisms in Eu-doped GaN CW Lee, HO Everitt, DS Lee, AJ Steckl, JM Zavada Journal of applied physics 95 (12), 7717-7724, 2004 | 77 | 2004 |
| Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display CM Kang, DJ Kong, JP Shim, S Kim, SB Choi, JY Lee, JH Min, DJ Seo, ... Optics Express 25 (3), 2489-2495, 2017 | 75 | 2017 |
| Photoluminescence properties of in situ Tm-doped U Hömmerich, EE Nyein, DS Lee, AJ Steckl, JM Zavada Applied physics letters 83 (22), 4556-4558, 2003 | 75 | 2003 |
| Enhanced blue emission from Tm-doped electroluminescent thin films DS Lee, AJ Steckl Applied physics letters 83 (11), 2094-2096, 2003 | 74 | 2003 |
| Hybrid full-color inorganic light-emitting diodes integrated on a single wafer using selective area growth and adhesive bonding CM Kang, JY Lee, DJ Kong, JP Shim, S Kim, SH Mun, SY Choi, MD Park, ... ACS photonics 5 (11), 4413-4422, 2018 | 69 | 2018 |
| Light-extraction enhancement of a GaN-based LED covered with ZnO nanorod arrays H Jeong, DJ Park, HS Lee, YH Ko, JS Yu, SB Choi, DS Lee, EK Suh, ... Nanoscale 6 (8), 4371-4378, 2014 | 68 | 2014 |
| Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction BO Jung, YH Kwon, DJ Seo, DS Lee, HK Cho Journal of crystal growth 370, 314-318, 2013 | 67 | 2013 |
| Spectroscopic and energy transfer studies of Eu3+ centers in GaN H Peng, CW Lee, HO Everitt, C Munasinghe, DS Lee, AJ Steckl Journal of Applied Physics 102 (7), 2007 | 64 | 2007 |
| Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission CM Kang, SJ Kang, SH Mun, SY Choi, JH Min, S Kim, JP Shim, DS Lee Scientific reports 7 (1), 1-9, 2017 | 62 | 2017 |
| Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region BO Jung, SY Bae, SY Kim, S Lee, JY Lee, DS Lee, Y Kato, Y Honda, ... Nano Energy 11, 294-303, 2015 | 58 | 2015 |
