| Recombination of free and bound excitons in GaN B Monemar, PP Paskov, JP Bergman, AA Toropov, TV Shubina, ... physica status solidi (b) 245 (9), 1723-1740, 2008 | 145 | 2008 |
| Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers R Aleksiejūnas, M Sūdžius, T Malinauskas, J Vaitkus, K Jarašiūnas, ... Applied physics letters 83 (6), 1157-1159, 2003 | 97 | 2003 |
| Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques T Malinauskas, K Jarašiūnas, S Miasojedovas, S Juršėnas, B Beaumont, ... Applied physics letters 88 (20), 2006 | 62 | 2006 |
| Optical evaluation of carrier lifetime and diffusion length in synthetic diamonds T Malinauskas, K Jarasiunas, E Ivakin, V Ralchenko, A Gontar, ... Diamond and Related Materials 17 (7-10), 1212-1215, 2008 | 57 | 2008 |
| All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE-grown GaN T Malinauskas, R Aleksiejūnas, K Jarašiūnas, B Beaumont, P Gibart, ... Journal of crystal growth 300 (1), 223-227, 2007 | 53 | 2007 |
| Solar water splitting: efficiency discussion J Juodkazytė, G Seniutinas, B Šebeka, I Savickaja, T Malinauskas, ... International Journal of Hydrogen Energy 41 (28), 11941-11948, 2016 | 50 | 2016 |
| Transient photoluminescence of shallow donor bound excitons in GaN B Monemar, PP Paskov, JP Bergman, G Pozina, AA Toropov, TV Shubina, ... Physical Review B—Condensed Matter and Materials Physics 82 (23), 235202, 2010 | 50 | 2010 |
| Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers T Malinauskas, K Jarašiūnas, R Aleksiejunas, D Gogova, B Monemar, ... physica status solidi (b) 243 (7), 1426-1430, 2006 | 50 | 2006 |
| The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique K Neimontas, T Malinauskas, R Aleksiejūnas, M Sūdžius, K Jarašiūnas, ... Semiconductor science and technology 21 (7), 952, 2006 | 41 | 2006 |
| Implementation of diffractive optical element in four-wave mixing scheme for ex situ characterization of hydride vapor phase epitaxy-grown GaN layers K Jarasiunas, R Aleksiejunas, T Malinauskas, V Gudelis, T Tamulevicius, ... Review of Scientific Instruments 78 (3), 2007 | 40 | 2007 |
| Structural defect-related emissions in nonpolar a-plane GaN PP Paskov, R Schifano, T Paskova, T Malinauskas, JP Bergman, ... Physica B: Condensed Matter 376, 473-476, 2006 | 39 | 2006 |
| Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four‐wave mixing technique R Aleksiejūnas, M Sūdžius, V Gudelis, T Malinauskas, K Jarašiūnas, ... physica status solidi (c), 2686-2690, 2003 | 35 | 2003 |
| Diffusion and recombination of degenerate carrier plasma in GaN T Malinauskas, K Jarasiunas, M Heuken, F Scholz, P Brückner physica status solidi c 6 (S2 2), S743-S746, 2009 | 34 | 2009 |
| InxGa1− xN performance as a band-gap-tunable photo-electrode in acidic and basic solutions J Juodkazytė, B Šebeka, I Savickaja, A Kadys, E Jelmakas, T Grinys, ... Solar energy materials and solar cells 130, 36-41, 2014 | 33 | 2014 |
| Determination of carrier diffusion coefficient and lifetime in single crystalline CVD diamonds by light‐induced transient grating technique T Malinauskas, K Jarašiūnas, E Ivakin, N Tranchant, M Nesladek physica status solidi (a) 207 (9), 2058-2063, 2010 | 33 | 2010 |
| Remote epitaxy of GaN via graphene on GaN/sapphire templates K Badokas, A Kadys, J Mickevičius, I Ignatjev, M Skapas, S Stanionytė, ... Journal of Physics D: Applied Physics 54 (20), 205103, 2021 | 30 | 2021 |
| Optical and structural properties of BGaN layers grown on different substrates A Kadys, J Mickevičius, T Malinauskas, J Jurkevičius, M Kolenda, ... Journal of Physics D: Applied Physics 48 (46), 465307, 2015 | 30 | 2015 |
| Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth J Mickevičius, D Dobrovolskas, T Steponavičius, T Malinauskas, ... Applied Surface Science 427, 1027-1032, 2018 | 28 | 2018 |
| Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements I Reklaitis, F Nippert, R Kudžma, T Malinauskas, S Karpov, I Pietzonka, ... Journal of Applied Physics 121 (3), 2017 | 28 | 2017 |
| Morphological and optical property study of Li doped ZnO produced by microwave-assisted solvothermal synthesis P Ščajev, R Durena, P Onufrijevs, S Miasojedovas, T Malinauskas, ... Materials Science in Semiconductor Processing 135, 106069, 2021 | 23 | 2021 |
Ramunas AleksiejunasVilnius University在 ff.vu.lt 的电子邮件经过验证
