Helicity-Resolved Raman Scattering of MoS2, MoSe2, WS2, and WSe2 Atomic Layers SY Chen, C Zheng, MS Fuhrer, J Yan Nano letters 15 (4), 2526-2532, 2015 | 313 | 2015 |
Coulomb-bound four-and five-particle intervalley states in an atomically-thin semiconductor SY Chen, T Goldstein, T Taniguchi, K Watanabe, J Yan Nature communications 9 (1), 3717, 2018 | 186 | 2018 |
Antenna enhanced graphene thz emitter and detector J Tong, M Muthee, SY Chen, SK Yngvesson, J Yan Nano Letters 15 (8), 5295–5301, 2015 | 173 | 2015 |
Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors YC Wu, CH Liu, SY Chen, FY Shih, PH Ho, CW Chen, CT Liang, ... Scientific Reports 5 (11472), 2015 | 142 | 2015 |
Activation of New Raman Modes by Inversion Symmetry Breaking in Type II Weyl Semimetal Candidate T′-MoTe2 SY Chen, T Goldstein, D Venkataraman, A Ramasubramaniam, J Yan Nano Letters 16 (9), 5852-5860, 2016 | 129 | 2016 |
Biologically inspired graphene-chlorophyll phototransistors with high gain SY Chen, YY Lu, FY Shih, PH Ho, YF Chen, CW Chen, YT Chen, ... Carbon 63, 23-29, 2013 | 118 | 2013 |
Ultrathin Ga2O3 Glass: A Large‐Scale Passivation and Protection Material for Monolayer WS2 M Wurdack, T Yun, E Estrecho, N Syed, S Bhattacharyya, M Pieczarka, ... Advanced Materials 33 (3), 2005732, 2021 | 75 | 2021 |
Transport/magnetotransport of high-performance graphene transistors on organic molecule-functionalized substrates SY Chen, PH Ho, RJ Shiue, CW Chen, WH Wang Nano letters 12 (2), 964-969, 2012 | 67 | 2012 |
Luminescent Emission of Excited Rydberg Excitons from Monolayer WSe2 SY Chen, Z Lu, T Goldstein, J Tong, A Chaves, J Kunstmann, ... Nano letters 19 (4), 2464-2471, 2019 | 66 | 2019 |
Raman scattering and anomalous Stokes anti-Stokes ratio in MoTe2 atomic layers T Goldstein, SY Chen, D Xiao, A Ramasubramaniam, J Yan Scientific Reports 6 (28024), 2016 | 59 | 2016 |
Superior Valley Polarization and Coherence of Excitons in Monolayer SY Chen, T Goldstein, J Tong, T Taniguchi, K Watanabe, J Yan Physical review letters 120 (4), 046402, 2018 | 54 | 2018 |
Intrinsic Phonon Bands in High-Quality Monolayer T′ Molybdenum Ditelluride SY Chen, CH Naylor, T Goldstein, ATC Johnson, J Yan ACS nano 11 (1), 814-820, 2017 | 51 | 2017 |
Ground and excited state exciton polarons in monolayer MoSe2 T Goldstein, YC Wu, SY Chen, T Taniguchi, K Watanabe, K Varga, J Yan The Journal of Chemical Physics 153 (7), 2020 | 49 | 2020 |
Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors YH Chen, CY Cheng, SY Chen, JSD Rodriguez, HT Liao, K Watanabe, ... npj 2D Materials and Applications 3 (1), 49, 2019 | 24 | 2019 |
Residue-free fabrication of high-performance graphene devices by patterned PMMA stencil mask FY Shih, SY Chen, CH Liu, PH Ho, TS Wu, CW Chen, YF Chen, WH Wang AIP Advances 4 (6), 2014 | 17 | 2014 |
Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors CY Cheng, WL Pai, YH Chen, NT Paylaga, PY Wu, CW Chen, CT Liang, ... Nano Letters 22 (6), 2270-2276, 2022 | 8 | 2022 |
Demonstration of distinct semiconducting transport characteristics of monolayer graphene functionalized via plasma activation of substrate surfaces PH Wang, FY Shih, SY Chen, AB Hernandez, PH Ho, LY Chang, ... Carbon 93, 353-360, 2015 | 7 | 2015 |
Defects, band bending and ionization rings in MoS2 I Di Bernardo, J Blyth, L Watson, K Xing, YH Chen, SY Chen, ... Journal of Physics: Condensed Matter 34 (17), 174002, 2022 | 6 | 2022 |
Inversion-symmetry-breaking-activated shear Raman bands in -MoTe SY Chen, T Goldstein, A Ramasubramaniam, J Yan arXiv preprint arXiv:1602.03566, 2016 | 6 | 2016 |
The key role of non-local screening in the environment-insensitive exciton fine structures of transition-metal dichalcogenide monolayers WH Li, JD Lin, PY Lo, GH Peng, CY Hei, SY Chen, SJ Cheng Nanomaterials 13 (11), 1739, 2023 | 5 | 2023 |