| Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids J Zhou, G Han, Q Li, Y Peng, X Lu, C Zhang, J Zhang, QQ Sun, DW Zhang, ... 2016 IEEE International Electron Devices Meeting (IEDM), 12.2. 1-12.2. 4, 2016 | 177 | 2016 |
| Negative differential resistance in negative capacitance FETs J Zhou, G Han, J Li, Y Liu, Y Peng, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Electron Device Letters 39 (4), 622-625, 2018 | 115 | 2018 |
| Ferroelectric negative capacitance GeSn PFETs with sub-20 mV/decade subthreshold swing J Zhou, G Han, Y Peng, Y Liu, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Electron Device Letters 38 (8), 1157-1160, 2017 | 81 | 2017 |
| Hysteresis Reduction in Negative Capacitance Ge PFETs Enabled by Modulating Ferroelectric Properties in HfZrOx J Zhou, Y Peng, G Han, Q Li, Y Liu, J Zhang, M Liao, QQ Sun, DW Zhang, ... IEEE Journal of the Electron Devices Society 6, 41-48, 2017 | 65 | 2017 |
| Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell AJ Tan, K Chatterjee, J Zhou, D Kwon, YH Liao, S Cheema, C Hu, ... IEEE Electron Device Letters 41 (2), 240-243, 2019 | 58 | 2019 |
| Review of Si-based GeSn CVD growth and optoelectronic applications Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin, Y Dong, B Lu, ... Nanomaterials 11 (10), 2556, 2021 | 52 | 2021 |
| Frequency dependence of performance in Ge negative capacitance PFETs achieving sub-30 mV/decade swing and 110 mV hysteresis at MHz J Zhou, J Wu, G Han, R Kanyang, Y Peng, J Li, H Wang, Y Liu, J Zhang, ... 2017 IEEE International Electron Devices Meeting (IEDM), 15.5. 1-15.5. 4, 2017 | 50 | 2017 |
| Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrOx J Li, J Zhou, G Han, Y Liu, Y Peng, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Transactions on Electron Devices 65 (3), 1217-1222, 2018 | 44 | 2018 |
| Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure S Zhang, Y Liu, J Zhou, M Ma, A Gao, B Zheng, L Li, X Su, G Han, J Zhang, ... Nanoscale Research Letters 15, 1-9, 2020 | 41 | 2020 |
| Spacer engineering in negative capacitance FinFETs YK Lin, H Agarwal, MY Kao, J Zhou, YH Liao, A Dasgupta, P Kushwaha, ... IEEE Electron Device Letters 40 (6), 1009-1012, 2019 | 41 | 2019 |
| Comparative Study of Negative Capacitance Ge pFETs With HfZrOxPartially and Fully Covering Gate Region J Zhou, G Han, J Li, Y Peng, Y Liu, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Transactions on Electron Devices 64 (12), 4838-4843, 2017 | 38 | 2017 |
| Correlation of gate capacitance with drive current and transconductance in negative capacitance Ge PFETs J Li, J Zhou, G Han, Y Liu, Y Peng, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Electron Device Letters 38 (10), 1500-1503, 2017 | 37 | 2017 |
| Demonstration of Ferroelectricity in Al-doped HfO2 with a Low Thermal Budget of 500° C J Zhou, Z Zhou, X Wang, H Wang, C Sun, K Han, Y Kang, X Gong IEEE Electron Device Letters 41 (7), 1130-1133, 2020 | 36 | 2020 |
| First demonstration of oxide semiconductor nanowire transistors: A novel digital etch technique, IGZO channel, nanowire width down to~ 20 nm, and I on exceeding 1300 μA/μm K Han, Q Kong, Y Kang, C Sun, C Wang, J Zhang, H Xu, S Samanta, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 35 | 2021 |
| Incomplete dipoles flipping produced near hysteresis-free negative capacitance transistors J Zhou, G Han, N Xu, J Li, Y Peng, Y Liu, J Zhang, QQ Sun, DW Zhang, ... IEEE Electron Device Letters 40 (2), 329-332, 2018 | 31 | 2018 |
| Experimental validation of depolarization field produced voltage gains in negative capacitance field-effect transistors J Zhou, G Han, N Xu, J Li, Y Peng, Y Liu, J Zhang, QQ Sun, DW Zhang, ... IEEE Transactions on Electron Devices 66 (10), 4419-4424, 2019 | 29 | 2019 |
| Nonideality of negative capacitance Ge field-effect transistors without internal metal gate J Wu, R Kanyang, G Han, J Zhou, Y Liu, Y Wang, Y Peng, J Zhang, ... IEEE Electron Device Letters 39 (4), 614-617, 2018 | 26 | 2018 |
| Temperature-dependent operation of InGaZnO ferroelectric thin-film transistors with a metal-ferroelectric-metal-insulator-semiconductor structure C Sun, Z Zheng, K Han, S Samanta, J Zhou, Q Kong, J Zhang, H Xu, ... IEEE Electron Device Letters 42 (12), 1786-1789, 2021 | 25 | 2021 |
| A Metal-Insulator-Semiconductor Non-Volatile Programmable Capacitor Based on a HfAlOₓ Ferroelectric Film Z Zhou, J Zhou, X Wang, H Wang, C Sun, K Han, Y Kang, Z Zheng, H Ni, ... IEEE Electron Device Letters 41 (12), 1837-1840, 2020 | 25 | 2020 |
| Effects of the Variation of Sweep Range on the Performance of Negative Capacitance FETs J Zhou, G Han, J Li, Y Liu, Y Peng, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Electron Device Letters 39 (4), 618-621, 2018 | 23 | 2018 |
Genquan HanXidian University在 xidian.edu.cn 的电子邮件经过验证
