An insight into self-heating effects and its implications on hot carrier degradation for silicon-nanotube-based double gate-all-around (DGAA) MOSFETs A Kumar, P Srinivas, PK Tiwari IEEE Journal of the Electron Devices Society 7, 1100-1108, 2019 | 16 | 2019 |
Self-heating effects and hot carrier degradation in In0. 53Ga0. 47As gate-all-around MOSFETs P Srinivas, A Kumar, S Jit, PK Tiwari Semiconductor Science and Technology 35 (6), 065008, 2020 | 15 | 2020 |
High SNM 32nm CNFET based 6T SRAM Cell design considering transistor ratio P Dhilleswararao, R Mahapatra, P Srinivas 2014 International Conference on Electronics and Communication Systems …, 2014 | 13 | 2014 |
Physical insight into self-heating effects in ultrathin junctionless gate-all-around FETs A Kumar, P Srinivas, PK Tiwari 2019 IEEE 9th International Nanoelectronics Conferences (INEC), 1-4, 2019 | 9 | 2019 |
Impact of process-induced inclined sidewalls on gate-induced drain leakage (GIDL) current of nanowire GAA MOSFETs A Maniyar, P Srinivas, PK Tiwari, KS Chang-Liao IEEE Transactions on Electron Devices 69 (9), 4815-4820, 2022 | 8 | 2022 |
Thermal noise models for trigate junctionless transistors including substrate bias effects D Gola, B Singh, P Srinivas, PK Tiwari IEEE Transactions on Electron Devices 67 (1), 263-269, 2019 | 8 | 2019 |
Effect of Substrate Induced Surface Potential (SISP) on Threshold Voltage of SOI Junction-Less Field Effect Transistor (JLFET) SD Vijay Kumar Dixit, Rajeev Gupta, Vaibhav Purwar, P.S.T.N Srinivas Silicon 12 (4), 921-926, 2019 | 7* | 2019 |
Compact drain current model of silicon-nanotubebased double gate-all-around (DGAA) MOSFETs incorporating short channel effects A Kumar, P Srinivas, PK Tiwari 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), 1-4, 2019 | 6 | 2019 |
Impact of Self-Heating on Linearity Performance of In0.53Ga0.47As-Based Gate-All-Around MOSFETs P Srinivas, PK Tiwari IEEE Transactions on Device and Materials Reliability 22 (1), 42-49, 2021 | 5 | 2021 |
Physical insight into self-heating induced performance degradation in RingFET S Singh, P Srinivas, A Kumar, PK Tiwari Silicon, 1-9, 2021 | 2 | 2021 |
Impact of self-heating on thermal noise in In1− xGaxAs GAA MOSFETs P Srinivas, S Jit, PK Tiwari Microelectronics Journal 131, 105661, 2023 | 1 | 2023 |
Back Bias Induced Modeling of Subthreshold Characteristics of SOI Junctionless Field Effect Transistor (JLFET) VK Dixit, R Gupta, P Srinivas, S Dubey Silicon 13, 1961-1967, 2021 | 1 | 2021 |
Analytical Threshold Voltage Model of Schottky-source/drain (Schottky-S/D) double gate-all-around (DGAA) Field-Effect-Transistors (FETs) A Kumar, P Srinivas, PK Tiwari 2019 Devices for Integrated Circuit (DevIC), 89-93, 2019 | 1 | 2019 |
A machine learning approach to accelerate reliability prediction in nanowire FETs from self-heating perspective TS Kumar, A Hazarika, P Srinivas, PK Tiwari, A Kumar Microelectronics Reliability 161, 115484, 2024 | | 2024 |
Impact of ambient temperature on CombFET for sub-5-nm technology nodes: An RF performance perspective P Srinivas, NA Kumari, A Kumar, PK Tiwari, KG Sravani Microsystem Technologies, 1-9, 2024 | | 2024 |
Logic-in-memory application of silicon nanotube-based FBFET with core-source architecture SS Katta, T Kumari, P Srinivas, PK Tiwari Microelectronics Journal 146, 106133, 2024 | | 2024 |
Impact of Process-Induced Inclined Side-Walls on Gate Leakage Current of Nanowire GAA MOSFETs A Maniyar, P Raj, P Srinivas, A Kumar, KS Chang-Liao, PK Tiwari IEEE Transactions on Electron Devices, 2024 | | 2024 |
Impact of Process-Induced Inclined Sidewalls On Small Signal Parameters of Silicon Nanowire GAA MOSFET A Maniyar, PSTN Srinivas, PK Tiwari TENCON 2023-2023 IEEE Region 10 Conference (TENCON), 1272-1276, 2023 | | 2023 |
In0.53Ga0.47As Nanosheet MOSFETs with Self-Heating Effects AKPKT P. S. T. N. Srinivas 2022 IEEE Silchar Subsection Conference (SILCON), 1-6, 2023 | | 2023 |
Effect of self-heating on small-signal parameters of In0. 53Ga0. 47As based gate-all-around MOSFETs P Srinivas, A Kumar, PK Tiwari Semiconductor Science and Technology 36 (12), 125012, 2021 | | 2021 |