| Vacancy‐Induced Synaptic Behavior in 2D WS2 Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing X Yan, Q Zhao, AP Chen, J Zhao, Z Zhou, J Wang, H Wang, L Zhang, X Li, ... Small 15 (24), 1901423, 2019 | 313 | 2019 |
| Designing carbon conductive filament memristor devices for memory and electronic synapse applications Z Zhou, J Zhao, AP Chen, Y Pei, Z Xiao, G Wang, J Chen, G Fu, X Yan Materials Horizons 7 (4), 1106-1114, 2020 | 64 | 2020 |
| A carbon-based memristor design for associative learning activities and neuromorphic computing Y Pei, Z Zhou, AP Chen, J Chen, X Yan Nanoscale 12 (25), 13531-13539, 2020 | 56 | 2020 |
| Perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction at an oxide/ferromagnetic metal interface W Lin, B Yang, AP Chen, X Wu, R Guo, S Chen, L Liu, Q Xie, X Shu, Y Hui, ... Physical Review Letters 124, 217202, 2020 | 34 | 2020 |
| Modulating multiferroic control of magnetocrystalline anisotropy using 5d transition metal capping layers AP Chen, YP Feng ACS Applied Materials & Interfaces 12 (22), 25383-25389, 2020 | 14 | 2020 |
| Effect of Composition on the Magnetic Properties of the Free Layer in Double-Barrier Magnetic Tunnel Junctions S Srivastava, AP Chen, T Dutta, R Ramaswamy, J Son, MSM Saifullah, ... Physical Review Applied 10 (2), 024031, 2018 | 11 | 2018 |
| Effects of B and C doping on tunneling magnetoresistance in CoFe/MgO magnetic tunnel junctions AP Chen, JD Burton, EY Tsymbal, YP Feng, J Chen Physical Review B 98 (4), 045129, 2018 | 10 | 2018 |
| Engineering Interfacial Perpendicular Magnetic Anisotropy in Fe2CoSi/Pt Multilayers with Interfacial Strain and Orbital Hybridization Y Liu, AP Chen, L Ren, Y Liu, S Srivastava, H Yang, YP Feng, KL Teo ACS Applied Electronic Materials 1 (7), 1251-1260, 2019 | 8 | 2019 |
| Harnessing GPT-3.5 for text parsing in solid-state synthesis–case study of ternary chalcogenides M Thway, AKY Low, S Khetan, H Dai, J Recatala-Gomez, AP Chen, ... Digital Discovery 3 (2), 328-336, 2024 | 6 | 2024 |
| Thickness and Ferroelectric Polarization Influence on Film Magnetic Anisotropy across a Multiferroic Material Interface AP Chen, W Lin, J Chen, YP Feng ACS Applied Materials & Interfaces 12 (39), 44317-44324, 2020 | 2 | 2020 |
| Electronic structure of grain boundaries containing reactive element segregants AP Chen, AH Heuer, MW Finnis, WMC Foulkes Physical Review Materials 6 (9), 093402, 2022 | 1 | 2022 |
| Magnetism and Spin Transport at the Interface of Ferroelectric and Ferromagnetic Materials AP Chen PQDT-Global, 2018 | 1 | 2018 |
| Exploring material compositions for synthesis using oxidation states M Thway, AP Chen, H Dai, J Recatala-Gomez, SIP Tian, R Zhu, W Zhai, ... arXiv preprint arXiv:2405.08399, 2024 | | 2024 |
| Distinction between alloyed Perovskite and elpasolite nanocrystals P Mishra, M Zhang, AP Chen, TC Sum, M Duchamp, YM Lam, ... | | 2023 |
| Diffusion of oxygen in Mg-doped : The corundum conundrum explained AP Chen, WMC Foulkes, AH Heuer, MW Finnis Physical Review Materials 6 (6), 063404, 2022 | | 2022 |
| Comment on “Self-diffusion in high-purity α-Al2O3: Comparison of Ti-doped, Mg-doped and undoped single crystals” P. Fielitz, S. Ganschow, K. Klemens, and G. Borchardt, J. Eur … AH Heuer, MW Finnis, WMC Foulkes, AP Chen Journal of the European Ceramic Society 42 (4), 1829-1831, 2022 | | 2022 |
Jingsheng ChenProfessor, Department of Materials Science and Engineering, National University of Singapore在 nus.edu.sg 的电子邮件经过验证
