| Determination of anisotropic up to 60 T in single crystals MM Altarawneh, K Collar, CH Mielke, N Ni, SL Bud’ko, PC Canfield Physical Review B—Condensed Matter and Materials Physics 78 (22), 220505, 2008 | 201 | 2008 |
| Fermi surface of -uranium at ambient pressure D Graf, R Stillwell, TP Murphy, JH Park, M Kano, EC Palm, P Schlottmann, ... Physical Review B—Condensed Matter and Materials Physics 80 (24), 241101, 2009 | 29 | 2009 |
| Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs1-x Bi x films. ASBSEB Adam W Wood, Kristen Collar, Jincheng Li Nanotechnology 27 (11), 115704, 2016 | 21 | 2016 |
| GaAs1− yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1− yBiy and Bi incorporation J Li, K Forghani, Y Guan, W Jiao, W Kong, K Collar, TH Kim, TF Kuech, ... AIP Advances 5 (6), 2015 | 18 | 2015 |
| Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy W Kong, WY Jiao, JC Li, K Collar, TH Kim, JH Leach, AS Brown Applied Physics Letters 107 (3), 2015 | 17 | 2015 |
| Growth of GaAs1− xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics J Li, TH Kim, K Forghani, W Jiao, W Kong, K Collar, TF Kuech, AS Brown Journal of Applied Physics 116 (4), 2014 | 15 | 2014 |
| Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition W Jiao, W Kong, J Li, K Collar, TH Kim, M Losurdo, AS Brown AIP Advances 6 (3), 2016 | 14 | 2016 |
| Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy K Collar, J Li, W Jiao, Y Guan, M Losurdo, J Humlicek, AS Brown AIP Advances 7 (7), 2017 | 10 | 2017 |
| Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates KN Collar, J Li, W Jiao, W Kong, AS Brown Nanotechnology 29 (3), 035604, 2017 | 9 | 2017 |
| The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy W Jiao, W Kong, J Li, K Collar, TH Kim, AS Brown Applied Physics Letters 103 (16), 2013 | 9 | 2013 |
| Impact of vicinal GaAs (001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1− xBix J Li, K Collar, W Jiao, W Kong, TF Kuech, SE Babcock, A Brown Applied Physics Letters 108 (23), 2016 | 6 | 2016 |
| Structural Characterization of the Nanocolumnar Microstructure of InAlN W Kong, WY Jiao, JC Li, K Collar, JH Leach, J Fournelle, TH Kim, ... Journal of Electronic Materials 45, 654-660, 2016 | 6 | 2016 |
| The characteristics of MBE-grown InxAl1− xN/GaN surface states W Jiao, W Kong, J Li, K Collar, TH Kim, M Losurdo, AS Brown Applied Physics Letters 109 (8), 2016 | 5* | 2016 |
| GaAsBi Synthesis: From Band Structure Modification to Nanostructure Formation KN Collar Duke University, 2017 | | 2017 |
| The characteristics of MBE-grown In {sub x} Al {sub 1− x} N/GaN surface states W Jiao, W Kong, J Li, TH Kim, AS Brown, K Collar, M Losurdo Applied Physics Letters 109 (8), 2016 | | 2016 |
| The Relationship Between Terminating Oxide Chemistry and InAs (100) Two-Dimensional Electron Gas (2DEG) Conductivity K Collar, W Jiao, J Li, W Kong, A Brown APS March Meeting Abstracts 2015, M9. 005, 2015 | | 2015 |
| GaAs Bi y Raman signatures: illuminating relationships between the electrical and optical properties of GaAs Bi y and Bi incorporation J Li, K Forghani, Y Guan, W Jiao, W Kong, K Collar, TH Kim, TF Kuech, ... Appl. Phys. Lett 112110 (10.1063/1.3695066), 100, 2012 | | 2012 |
| Binary Alloy Solidification at 35 Tesla J Cooley, T Ott, S Tracy, T Tucker, K Collar, S Lillard, J Foley, T Wheeler, ... Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011 | | 2011 |
| Synthesis and Characterization of SN Doped CEIN3 K Collar | | 2011 |
| Synthesis and Field Skin Depth Studies on Tin Doped CeIn3 K Collar, J Cooley, S Tozer APS Southeastern Section Meeting Abstracts 77, DA. 001, 2010 | | 2010 |
Wenyuan JiaoDuke University在 duke.edu 的电子邮件经过验证
