A review of chemical vapour deposition of graphene on copper C Mattevi, H Kim, M Chhowalla Journal of Materials Chemistry 21 (10), 3324-3334, 2011 | 1992 | 2011 |
Insulator to semimetal transition in graphene oxide G Eda, C Mattevi, H Yamaguchi, HK Kim, M Chhowalla The Journal of Physical Chemistry C 113 (35), 15768-15771, 2009 | 744 | 2009 |
Activation energy paths for graphene nucleation and growth on Cu HK Kim, C Mattevi, MR Calvo, JC Oberg, L Artiglia, S Agnoli, ... ACS nano 6 (4), 3614-3623, 2012 | 508 | 2012 |
Production and processing of graphene and related materials C Backes, AM Abdelkader, C Alonso, A Andrieux-Ledier, R Arenal, ... 2D Materials 7 (2), 022001, 2020 | 427 | 2020 |
Highly uniform 300 mm wafer-scale deposition of single and multilayered chemically derived graphene thin films H Yamaguchi, G Eda, C Mattevi, HK Kim, M Chhowalla ACS nano 4 (1), 524-528, 2010 | 261 | 2010 |
Suppressing nucleation in metalorganic chemical vapor deposition of MoS2 monolayers by alkali metal halides HK Kim, D Ovchinnikov, D Deiana, D Unuchek, A Kis Nano Letters, 2017 | 238 | 2017 |
Epitaxial graphene growth and shape dynamics on copper: phase-field modeling and experiments E Meca, J Lowengrub, H Kim, C Mattevi, VB Shenoy Nano letters 13 (11), 5692-5697, 2013 | 175 | 2013 |
Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2 H Cun, M Macha, HK Kim, K Liu, Y Zhao, T LaGrange, A Kis, A Radenovic Nano Research 12, 2646-2652, 2019 | 138 | 2019 |
Modeling of the self-limited growth in catalytic chemical vapor deposition of graphene HK Kim, E Saiz, M Chhowalla, C Mattevi New Journal of Physics 15 (5), 053012, 2013 | 79 | 2013 |
Optoelectronic properties of graphene thin films deposited by a Langmuir–Blodgett assembly HK Kim, C Mattevi, HJ Kim, A Mittal, KA Mkhoyan, RE Riman, ... Nanoscale 5 (24), 12365-12374, 2013 | 68 | 2013 |
Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion MW Chen, HK Kim, D Ovchinnikov, A Kuc, T Heine, O Renault, A Kis npj 2D Materials and Applications 2 (1), 2, 2018 | 66 | 2018 |
Doping efficiency of single and randomly stacked bilayer graphene by iodine adsorption HK Kim, O Renault, A Tyurnina, JP Simonato, D Rouchon, D Mariolle, ... Applied Physics Letters 105 (1), 2014 | 49 | 2014 |
Solution-processable organic dielectrics for graphene electronics C Mattevi, F Colléaux, HK Kim, YH Lin, KT Park, M Chhowalla, ... Nanotechnology 23 (34), 344017, 2012 | 46 | 2012 |
Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111) MW Chen, HK Kim, C Bernard, M Pizzochero, J Zaldı́var, JI Pascual, ... ACS nano 12 (11), 11161-11168, 2018 | 22 | 2018 |
Free-standing electronic character of monolayer MoS2 in van der Waals epitaxy HK Kim, D Dumcenco, M Frégnaux, A Benayad, MW Chen, YC Kung, ... Physical Review B 94, 081401(R), 2016 | 19 | 2016 |
Epitaxial growth in dislocation-free strained asymmetric alloy films RC Desai, HK Kim, A Chatterji, D Ngai, S Chen, N Yang Physical Review B—Condensed Matter and Materials Physics 81 (23), 235301, 2010 | 17 | 2010 |
Influence of Cu substrate topography on the growth morphology of chemical vapour deposited graphene Y Xiao, HK Kim, C Mattevi, M Chhowalla, RC Maher, LF Cohen Carbon 65, 7-12, 2013 | 14 | 2013 |
Chemistry and electronics of single layer MoS2 domains from photoelectron spectromicroscopy using laboratory excitation sources M Frégnaux, H Kim, D Rouchon, V Derycke, J Bleuse, D Voiry, ... Surface and Interface Analysis, 2016 | 10 | 2016 |
Correlating chemical and electronic states from quantitative photoemission electron microscopy of transition-metal dichalcogenide heterostructures O Renault, H Kim, D Dumcenco, D Unuchek, N Chevalier, M Gay, A Kis, ... Journal of Vacuum Science & Technology A 39 (5), 2021 | 6 | 2021 |
Doping characteristics of iodine on as-grown chemical vapor deposited graphene on Pt HK Kim, O Renault, A Tyurnina, JF Guillet, JP Simonato, D Rouchon, ... Ultramicroscopy, 2015 | 4 | 2015 |