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Ho-Young Cha
Ho-Young Cha
在 hongik.ac.kr 的电子邮件经过验证 - 首页
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引用次数
引用次数
年份
The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate
YC Choi, M Pophristic, HY Cha, B Peres, MG Spencer, LF Eastman
IEEE transactions on Electron devices 53 (12), 2926-2931, 2006
1282006
High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-/RF-Sputtered-
W Choi, O Seok, H Ryu, HY Cha, KS Seo
IEEE Electron Device Letters 35 (2), 175-177, 2013
1252013
Low turn-on voltage AlGaN/GaN-on-Si rectifier with gated ohmic anode
JG Lee, BR Park, CH Cho, KS Seo, HY Cha
IEEE Electron Device Letters 34 (2), 214-216, 2013
1172013
Impact ionization coefficients in 4H-SiC
WS Loh, BK Ng, JS Ng, SI Soloviev, HY Cha, PM Sandvik, CM Johnson, ...
IEEE Transactions on electron devices 55 (8), 1984-1990, 2008
1072008
Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors
HY Cha, H Wu, M Chandrashekhar, YC Choi, S Chae, G Koley, ...
Nanotechnology 17 (5), 1264, 2006
892006
Improvement of Instability in Normally-Off GaN MIS-HEMTs Employing as an Interfacial Layer
W Choi, H Ryu, N Jeon, M Lee, HY Cha, KS Seo
IEEE Electron Device Letters 35 (1), 30-32, 2013
792013
Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs
HY Cha, CI Thomas, G Koley, LF Eastman, MG Spencer
IEEE transactions on electron devices 50 (7), 1569-1574, 2003
742003
Electrical and optical modeling of 4H-SiC avalanche photodiodes
HY Cha, PM Sandvik
Japanese Journal of Applied Physics 47 (7R), 5423, 2008
702008
State-of-the-art AlGaN/GaN-on-Si heterojunction field effect transistors with dual field plates
JG Lee, BR Park, HJ Lee, M Lee, KS Seo, HY Cha
Applied Physics Express 5 (6), 066502, 2012
672012
High-Quality ICPCVD for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs
BR Park, JG Lee, W Choi, H Kim, KS Seo, HY Cha
IEEE Electron Device Letters 34 (3), 354-356, 2013
642013
4H-SiC PIN recessed-window avalanche photodiode with high quantum efficiency
H Liu, D Mcintosh, X Bai, H Pan, M Liu, JC Campbell, HY Cha
IEEE photonics technology letters 20 (18), 1551-1553, 2008
622008
Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors
J Hwang, WJ Schaff, BM Green, H Cha, LF Eastman
Solid-State Electronics 48 (2), 363-366, 2004
592004
Normally-off GaN-on-Si MISFET using PECVD SiON gate dielectric
HS Kim, SW Han, WH Jang, CH Cho, KS Seo, J Oh, HY Cha
IEEE Electron Device Letters 38 (8), 1090-1093, 2017
532017
Gallium nitride nanowire nonvolatile memory device
HY Cha, H Wu, S Chae, MG Spencer
Journal of applied physics 100 (2), 2006
522006
Temperature dependent characteristics of nonreach-through 4H-SiC separate absorption and multiplication APDs for UV detection
HY Cha, S Soloviev, S Zelakiewicz, P Waldrab, PM Sandvik
IEEE Sensors Journal 8 (3), 233-237, 2008
492008
High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors
JG Lee, HS Kim, KS Seo, CH Cho, HY Cha
Solid-State Electronics 122, 32-36, 2016
462016
Simulation study on breakdown behavior of field-plate SiC MESFETs
HY Cha, YC Choi, LF Eastman, MG Spencer
International journal of high speed electronics and systems 14 (03), 884-889, 2004
442004
High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance
YC Choi, M Pophristic, B Peres, HY Cha, MG Spencer, LF Eastman
Semiconductor science and technology 22 (5), 517, 2007
402007
Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate
JH Choi, CH Cho, HY Cha
Results in Physics 9, 1170-1171, 2018
392018
Degradation characteristics of AlGaN-GaN high electron mobility transistors
H Kim, V Tilak, BM Green, H Cha, JA Smart, JR Shealy, LF Eastman
2001 IEEE International Reliability Physics Symposium Proceedings. 39th …, 2001
372001
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