High performance continuous wave 1.3 μm quantum dot lasers on silicon AY Liu, C Zhang, J Norman, A Snyder, D Lubyshev, JM Fastenau, ... Applied Physics Letters 104 (4), 2014 | 466 | 2014 |
Perspective: The future of quantum dot photonic integrated circuits JC Norman, D Jung, Y Wan, JE Bowers APL photonics 3 (3), 2018 | 253 | 2018 |
Quantum dot lasers for silicon photonics AY Liu, S Srinivasan, J Norman, AC Gossard, JE Bowers Photonics Research 3 (5), B1-B9, 2015 | 220 | 2015 |
Observation of the unconventional photon blockade HJ Snijders, JA Frey, J Norman, H Flayac, V Savona, AC Gossard, ... Physical review letters 121 (4), 043601, 2018 | 219 | 2018 |
A review of high-performance quantum dot lasers on silicon JC Norman, D Jung, Z Zhang, Y Wan, S Liu, C Shang, RW Herrick, ... IEEE Journal of Quantum Electronics 55 (2), 1-11, 2019 | 200 | 2019 |
1.3 μm submilliamp threshold quantum dot micro-lasers on Si Y Wan, J Norman, Q Li, MJ Kennedy, D Liang, C Zhang, D Huang, ... Optica 4 (8), 940-944, 2017 | 186 | 2017 |
High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity S Liu, X Wu, D Jung, JC Norman, MJ Kennedy, HK Tsang, AC Gossard, ... Optica 6 (2), 128-134, 2019 | 177 | 2019 |
Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si AY Liu, J Peters, X Huang, D Jung, J Norman, ML Lee, AC Gossard, ... Optics letters 42 (2), 338-341, 2017 | 173 | 2017 |
Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si D Jung, R Herrick, J Norman, K Turnlund, C Jan, K Feng, AC Gossard, ... Applied Physics Letters 112 (15), 2018 | 159 | 2018 |
High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si D Jung, J Norman, MJ Kennedy, C Shang, B Shin, Y Wan, AC Gossard, ... Applied Physics Letters 111 (12), 2017 | 155 | 2017 |
Highly reliable low-threshold InAs quantum dot lasers on on-axis (001) Si with 87% injection efficiency D Jung, Z Zhang, J Norman, R Herrick, MJ Kennedy, P Patel, K Turnlund, ... ACS photonics 5 (3), 1094-1100, 2017 | 145 | 2017 |
Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si J Norman, MJ Kennedy, J Selvidge, Q Li, Y Wan, AY Liu, PG Callahan, ... Optics Express 25 (4), 3927-3934, 2017 | 135 | 2017 |
1.3- m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon J Duan, H Huang, B Dong, D Jung, JC Norman, JE Bowers, F Grillot IEEE Photonics Technology Letters 31 (5), 345-348, 2019 | 104 | 2019 |
Ultrabright Entangled-Photon-Pair Generation from an -On-Insulator Microring Resonator TJ Steiner, JE Castro, L Chang, Q Dang, W Xie, J Norman, JE Bowers, ... PRX Quantum 2 (1), 010337, 2021 | 96 | 2021 |
Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates Y Wan, Z Zhang, R Chao, J Norman, D Jung, C Shang, Q Li, MJ Kennedy, ... Optics express 25 (22), 27715-27723, 2017 | 90 | 2017 |
Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor J Duan, H Huang, D Jung, Z Zhang, J Norman, JE Bowers, F Grillot Applied Physics Letters 112 (25), 2018 | 80 | 2018 |
1550-nm driven ErAs: In (Al) GaAs photoconductor-based terahertz time domain system with 6.5 THz bandwidth U Nandi, JC Norman, AC Gossard, H Lu, S Preu Journal of Infrared, Millimeter, and Terahertz Waves 39, 340-348, 2018 | 79 | 2018 |
Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Y Wan, D Inoue, D Jung, JC Norman, C Shang, AC Gossard, JE Bowers Photonics Research 6 (8), 776-781, 2018 | 72 | 2018 |
A pathway to thin GaAs virtual substrate on on‐axis Si (001) with ultralow threading dislocation density C Shang, J Selvidge, E Hughes, JC Norman, AA Taylor, AC Gossard, ... physica status solidi (a) 218 (3), 2000402, 2021 | 71 | 2021 |
Ultrahigh-Q AlGaAs-on-insulator microresonators for integrated nonlinear photonics W Xie, L Chang, H Shu, JC Norman, JD Peters, X Wang, JE Bowers Optics Express 28 (22), 32894-32906, 2020 | 71 | 2020 |