| Gate Interface Engineering for Subvolt Metal Oxide Transistor Fabrication by Using Ion-Conducting Dielectric with Mn2O3 Gate Interface N Pal, A Sharma, V Acharya, NK Chourasia, S Biring, BN Pal ACS Applied Electronic Materials 2 (1), 25-34, 2019 | 40 | 2019 |
| Ultra-Low Voltage Metal Oxide Thin Film Transistor by Low-Temperature Annealed Solution Processed LiAlO2 Gate Dielectric A Sharma, NK Chourasia, V Acharya, N Pal, S Biring, SW Liu, BN Pal Electronic Materials Letters 16, 22-34, 2020 | 35 | 2020 |
| Solution processed low band gap ion-conducting gate dielectric for low voltage metal oxide transistor NK Chourasia, A Sharma, V Acharya, N Pal, S Biring, BN Pal Journal of Alloys and Compounds 777, 1124-1132, 2019 | 35 | 2019 |
| Role of Electron Donation of TiO2 Gate Interface for Developing Solution-Processed High-Performance One-Volt Metal-Oxide Thin-Film Transistor Using Ion … A Sharma, NK Chourasia, N Pal, S Biring, BN Pal The Journal of Physical Chemistry C 123 (33), 20278-20286, 2019 | 31 | 2019 |
| High-κ SrTiO3 thin film as gate dielectric of a solution processed SnO2 thin film transistor V Acharya, N Pal, U Pandey, AK Yadav, M Suthar, PK Roy, S Biring, ... Materials Science in Semiconductor Processing 155, 107228, 2023 | 14 | 2023 |
| Functional Dielectric Properties of Solution-Processed Lithium Indium Tin Oxide (LiInSnO₄) and Its Application as a Gate Insulator of a Low Voltage Thin Film Transistor U Pandey, NK Chourasia, N Pal, S Biring, BN Pal IEEE Transactions on Electron Devices 69 (3), 1077-1082, 2022 | 14 | 2022 |
| Solution processed low operating voltage SnO2 thin film transistor by using Li2SnO3/TiO2 stacked gate dielectric V Acharya, N Pal, A Sharma, U Pandey, M Suthar, PK Roy, S Biring, ... Materials Science and Engineering: B 289, 116270, 2023 | 9 | 2023 |
| Coexistence of Electrochromism and Bipolar Nonvolatile Memory in a Single Viologen RK Parashar, S Kandpal, N Pal, D Manna, BN Pal, R Kumar, PC Mondal ACS Applied Materials & Interfaces 15 (44), 51527-51537, 2023 | 8 | 2023 |
| Solution processed low-voltage metal-oxide transistor by using TiO2/Li–Al2O3 stacked gate dielectric N Pal, U Pandey, S Biring, BN Pal Journal of Materials Science: Materials in Electronics 33 (12), 9580-9589, 2022 | 8 | 2022 |
| Dual-gated low operating voltage metal oxide thin-film transistor for highly sensitive and fast-response pressure sensing application U Pandey, N Pal, V Acharya, PK Aich, AK Yadav, BN Pal IEEE Sensors Journal 23 (11), 11482-11489, 2023 | 7 | 2023 |
| Application of a microwave synthesized ultra-smooth aC thin film for the reduction of dielectric/semiconductor interface trap states of an oxide thin film transistor N Pal, B Thakurta, R Chakraborty, U Pandey, V Acharya, S Biring, M Pal, ... Journal of Materials Chemistry C 10 (40), 14905-14914, 2022 | 7 | 2022 |
| Fabrication of non-volatile memory transistor by charge compensation of interfacial ionic polarization of a ferroelectric gate dielectric R Chakraborty, N Pal, U Pandey, S Pramanik, S Paliwal, S Suman, ... Applied Materials Today 33, 101862, 2023 | 6 | 2023 |
| Enhanced sub-band gap photosensitivity by an asymmetric source–drain electrode low operating voltage oxide transistor U Pandey, AK Yadav, N Pal, PK Aich, BN Pal Journal of Materials Chemistry C 11 (43), 15276-15287, 2023 | 6 | 2023 |
| Dielectric/Semiconductor Interfacial p‐Doping: A New Technique to Fabricate Solution‐Processed High‐Performance 1 V Ambipolar Oxide Transistors NK Chourasia, A Sharma, N Pal, S Biring, BN Pal physica status solidi (RRL)–Rapid Research Letters 14 (10), 2000268, 2020 | 5 | 2020 |
| Blue sensitive sub-band gap negative photoconductance in SnO 2/TiO 2 NP bilayer oxide transistor U Pandey, N Pal, A Ghosh, S Suman, S Biring, BN Pal Nanoscale 16 (17), 8504-8513, 2024 | 1 | 2024 |
| Emulating Low-Power Synaptic Plasticity in a Solution-Processed Oxide-Based Long Retention Memory Transistor with High Learning Accuracy R Chakraborty, S Pramanik, N Pal, U Pandey, S Suman, P Swaminathan, ... ACS Applied Materials & Interfaces, 2024 | | 2024 |
| Narrowband Red-Sensitive Positive−Negative Reversible Photodetector Using Organic Dye on the TiO2/SnO2 Heterojunction S Suman, U Pandey, N Pal, P Swaminathan, BN Pal ACS Photonics 11 (1), 93-101, 2023 | | 2023 |
| High Rectification Ratio at Room Temperature in Rhenium (I) Compound S Rajbangshi, N Pal, R Rahman, VN Nesterov, L Roy, S Ghosh, ... arXiv preprint arXiv:2311.07258, 2023 | | 2023 |
| Solution processed Li-Al2O3/LiNbO3/Li-Al2O3 stacked gate dielectric for a non-volatile ferroelectric thin film transistor N Pal, R Chakraborty, A Sharma, U Pandey, V Acharya, K Prajapati, ... Journal of Alloys and Compounds 960, 170691, 2023 | | 2023 |
| Solution-Processed LiNbO3 Thin Film as a Gate Dielectric of a Ferroelectric Thin Film Transistor R Chakraborty, N Pal, BN Pal 2022 IEEE International Conference on Emerging Electronics (ICEE), 1-3, 2022 | | 2022 |
Bhola Nath PalAssociate Prof., School of Material Sci. and Tech., Indian Institute of Technology (BHU)在 itbhu.ac.in 的电子邮件经过验证
