关注
El-Mostafa Bourim
El-Mostafa Bourim
National NanoFab Center, KAIST, Daejeon, South Korea
在 asia.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Variable resistance random access memory device and a method of fabricating the same
C Cho, E Lee, S Genrikh, EM Bourim
US Patent 7,498,600, 2009
1902009
Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications
J Lee, EM Bourim, W Lee, J Park, M Jo, S Jung, J Shin, H Hwang
Applied Physics Letters 97 (17), 2010
1892010
Non-volatile variable resistance memory device and method of fabricating the same
EM Bourim, E Lee, C Cho
US Patent 8,525,142, 2013
952013
PZT phase diagram determination by measurement of elastic moduli
A Bouzid, EM Bourim, M Gabbay, G Fantozzi
Journal of the European Ceramic Society 25 (13), 3213-3221, 2005
902005
Domain wall motion effect on the anelastic behavior in lead zirconate titanate piezoelectric ceramics
EM Bourim, H Tanaka, M Gabbay, G Fantozzi, BL Cheng
Journal of applied physics 91 (10), 6662-6669, 2002
762002
Investigation of state stability of low-resistance state in resistive memory
J Park, M Jo, EM Bourim, J Yoon, DJ Seong, J Lee, W Lee, H Hwang
IEEE Electron Device Letters 31 (5), 485-487, 2010
692010
Low programming voltage resistive switching in reactive metal/polycrystalline Pr0. 7Ca0. 3MnO3 devices
X Liu, KP Biju, EM Bourim, S Park, W Lee, J Shin, H Hwang
Solid state communications 150 (45-46), 2231-2235, 2010
512010
Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices
KP Biju, XJ Liu, EM Bourim, I Kim, S Jung, M Siddik, J Lee, H Hwang
Journal of Physics D: Applied Physics 43 (49), 495104, 2010
512010
Internal friction and dielectric measurements in lead zirconate titanate ferroelectric ceramics
EM Bourim, H Tanaka, M Gabbay, G Fantozzi
Japanese Journal of Applied Physics 39 (9S), 5542, 2000
392000
Ferroelectricity-induced resistive switching in Pb (Zr0. 52Ti0. 48) O3/Pr0. 7Ca0. 3MnO3/Nb-doped SrTiO3 epitaxial heterostructure
S Md Sadaf, M El Bourim, X Liu, S Hasan Choudhury, DW Kim, H Hwang
Applied Physics Letters 100 (11), 2012
372012
Interface state effects on resistive switching behaviors of Pt/Nb-doped SrTiO3 single-crystal Schottky junctions
EM Bourim, Y Kim, DW Kim
ECS Journal of Solid State Science and Technology 3 (7), N95, 2014
352014
Investigation of pyroelectric electron emission from monodomain lithium niobate single crystals
EM Bourim, CW Moon, SW Lee, IK Yoo
Physica B: Condensed Matter 383 (2), 171-182, 2006
332006
Non-volatile memory devices including variable resistance material
C Cho, E Lee, EM Bourim, C Moon
US Patent 8,125,021, 2012
312012
Electrical characterization and thermal admittance spectroscopy analysis of InGaN/GaN MQW blue LED structure
EM Bourim, JI Han
Electronic Materials Letters 11, 982-992, 2015
282015
Creep behavior of undoped and La–Nb codoped PZT based micro-piezoactuators for micro-optical modulator applications
EM Bourim, HY Kim, JS Yang, JW Yang, KS Woo, JH Song, SK Yun
Sensors and Actuators A: Physical 155 (2), 290-298, 2009
252009
A novel diffractive micro-optical modulator for mobile display applications
SK Yun, JH Song, SD An, IJ Yeo, YJ Choi, YG Lee, HW Park, KB Han, ...
MOEMS and Miniaturized Systems VII 6887, 17-27, 2008
232008
Size effect on negative capacitance at forward bias in InGaN/GaN multiple quantum well-based blue LED
EM Bourim, JI Han
Electronic Materials Letters 12, 67-75, 2016
222016
Elastic modulus and mechanical loss associated with phase transitions and domain walls motions in PZT based ceramics
EM Bourim, H Idrissi, BL Cheng, M Gabbay, G Fantozzi
Le Journal de Physique IV 6 (C8), C8-633-C8-636, 1996
221996
Doping-level dependences of switching speeds and the retention characteristics of resistive switching Pt/SrTiO3 junctions
M Gwon, E Lee, A Sohn, EM Bourim, DW Kim
J. Kor. Phys. Soc 57 (6), 1432-1436, 2010
182010
Filament-type resistive switching in homogeneous bi-layer Pr0. 7Ca0. 3MnO3 thin film memory devices
X Liu, KP Biju, EM Bourim, S Park, W Lee, D Lee, K Seo, H Hwang
Electrochemical and Solid-State Letters 14 (1), H9, 2010
182010
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