| Hydrogen in crystalline semiconductors SJ Pearton, JW Corbett, M Stavola Springer Science & Business Media, 2013 | 1025 | 2013 |
| Hydrogen interactions with defects in crystalline solids SM Myers, MI Baskes, HK Birnbaum, JW Corbett, GG DeLeo, ... Reviews of Modern Physics 64 (2), 559, 1992 | 639 | 1992 |
| Diffusivity of oxygen in silicon at the donor formation temperature M Stavola, JR Patel, LC Kimerling, PE Freeland Applied Physics Letters 42 (1), 73-75, 1983 | 282 | 1983 |
| Donor-hydrogen complexes in passivated silicon K Bergman, M Stavola, SJ Pearton, J Lopata Physical Review B 37 (5), 2770, 1988 | 254 | 1988 |
| Cu-O vibrations of M Stavola, DM Krol, W Weber, SA Sunshine, A Jayaraman, GA Kourouklis, ... Physical Review B 36 (1), 850, 1987 | 232 | 1987 |
| Hydrogen local modes and shallow donors in ZnO GA Shi, M Stavola, SJ Pearton, M Thieme, EV Lavrov, J Weber Physical Review B 72 (19), 195211, 2005 | 217 | 2005 |
| “Hidden hydrogen” in as-grown ZnO GA Shi, M Saboktakin, M Stavola, SJ Pearton Applied physics letters 85 (23), 5601-5603, 2004 | 191 | 2004 |
| Vibrational characteristics of acceptor‐hydrogen complexes in silicon M Stavola, SJ Pearton, J Lopata, WC Dautremont‐Smith Applied physics letters 50 (16), 1086-1088, 1987 | 176 | 1987 |
| Identification of defects in semiconductors M Stavola (No Title), 1998 | 136 | 1998 |
| Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure WC Dautremont‐Smith, JC Nabity, V Swaminathan, M Stavola, ... Applied physics letters 49 (17), 1098-1100, 1986 | 134 | 1986 |
| Vibrational spectroscopy of acceptor-hydrogen complexes in silicon: Evidence for low-frequency excitations M Stavola, SJ Pearton, J Lopata, WC Dautremont-Smith Physical Review B 37 (14), 8313, 1988 | 131 | 1988 |
| A zeroth order random network model of liquid water MG Sceats, M Stavola, SA Rice The Journal of Chemical Physics 70 (8), 3927-3938, 1979 | 126 | 1979 |
| Structure and vibrational properties of the dominant OH center in β-Ga2O3 P Weiser, M Stavola, WB Fowler, Y Qin, S Pearton Applied Physics Letters 112 (23), 2018 | 119 | 2018 |
| Hydrogen motion in defect complexes: reorientation kinetics of the BH complex in silicon M Stavola, K Bergman, SJ Pearton, J Lopata Physical review letters 61 (24), 2786, 1988 | 117 | 1988 |
| Raman scattering in with : Effect of substitution and oxygen vacancies on the Cu-O vibrational modes GA Kourouklis, A Jayaraman, B Batlogg, RJ Cava, M Stavola, DM Krol, ... Physical Review B 36 (16), 8320, 1987 | 110 | 1987 |
| Raman spectroscopy and normal-mode assignments for () single crystals DM Krol, M Stavola, W Weber, LF Schneemeyer, JV Waszczak, ... Physical Review B 36 (16), 8325, 1987 | 108 | 1987 |
| Passivation of Si donors and DX centers in AlGaAs by hydrogen plasma exposure JC Nabity, M Stavola, J Lopata, WC Dautremont‐Smith, CW Tu, ... Applied physics letters 50 (14), 921-923, 1987 | 107 | 1987 |
| Hydrogen in carbon‐doped GaAs grown by metalorganic molecular beam epitaxy DM Kozuch, M Stavola, SJ Pearton, CR Abernathy, J Lopata Applied physics letters 57 (24), 2561-2563, 1990 | 105 | 1990 |
| Hydrogen passivation of acceptors in p‐InP WC Dautremont‐Smith, J Lopata, SJ Pearton, LA Koszi, M Stavola, ... Journal of applied physics 66 (5), 1993-1996, 1989 | 101 | 1989 |
| Microscopic structure and multiple charge states of a complex in Si SJ Uftring, M Stavola, PM Williams, GD Watkins Physical Review B 51 (15), 9612, 1995 | 97 | 1995 |
