| Flexible artificial Si-In-Zn-O/ion gel synapse and its application to sensory-neuromorphic system for sign language translation S Oh, JI Cho, BH Lee, S Seo, JH Lee, H Choo, K Heo, SY Lee, JH Park Science Advances 7 (44), eabg9450, 2021 | 56 | 2021 |
| Effect of Si on the energy band gap modulation and performance of silicon indium zinc oxide thin-film transistors JY Choi, K Heo, KS Cho, SW Hwang, JG Chung, S Kim, BH Lee, SY Lee Scientific reports 7 (1), 15392, 2017 | 37 | 2017 |
| Direct investigation on energy bandgap of Si added ZnSnO system for stability enhancement by X-ray photoelectron spectroscopy BH Lee, DY Lee, A Sohn, S Park, DW Kim, SY Lee Journal of Alloys and Compounds 715, 9-15, 2017 | 34 | 2017 |
| Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor BH Lee, A Sohn, S Kim, SY Lee Scientific reports 9 (1), 886, 2019 | 29 | 2019 |
| Investigation on energy bandgap states of amorphous SiZnSnO thin films BH Lee, KS Cho, DY Lee, A Sohn, JY Lee, H Choo, S Park, SW Kim, ... Scientific reports 9 (1), 19246, 2019 | 25 | 2019 |
| Influence of channel layer thickness on the instability of amorphous SiZnSnO thin film transistors under negative bias temperature stress BH Lee, SY Lee physica status solidi (a) 215 (12), 1700698, 2018 | 20 | 2018 |
| Characteristics and Electronic Band Alignment of a Transparent p-CuI/n-SiZnSnO Heterojunction Diode with a High Rectification Ratio JH Lee, BH Lee, J Kang, M Diware, K Jeon, C Jeong, SY Lee, KH Kim Nanomaterials 11 (5), 1237, 2021 | 13 | 2021 |
| Simulation and optimization of layer thickness of amorphous oxide SIZO/Ag/SIZO multilayer to enhance transmittance of transparent electrodes without sacrificing sheet resistance BK Kim, BH Lee, KS Cho, SY Lee Journal of Alloys and Compounds 798, 622-627, 2019 | 9 | 2019 |
| Investigation on the improvement of stability of nitrogen doped amorphous SiInZnO thin-film transistors BH Lee, DY Lee, JY Lee, S Park, S Kim, SY Lee Solid-State Electronics 158, 59-63, 2019 | 6 | 2019 |
| Dependency of Si content on the performance of amorphous SiZnSnO thin film transistor based logic circuits for next-generation integrated circuits BH Lee, S Kim, SY Lee Transactions on Electrical and Electronic Materials 20, 175-180, 2019 | 6 | 2019 |
| Investigation on the variation of channel resistance and contact resistance of SiZnSnO semiconductor depending on Si contents using transmission line method BH Lee, S Han, SY Lee Solid-State Electronics 139, 15-20, 2018 | 6 | 2018 |
| Investigation on trap density depending on Si ratio in amorphous SiZnSnO thin-film transistors BH Lee, SY Hong, DH Kim, S Kim, HI Kwon, SY Lee Physica B: Condensed Matter 574, 311629, 2019 | 5 | 2019 |
| High sensitivity of HCl gas sensor based on pentacene organic field-effect transistor BH Lee, SY Lee Transactions on Electrical and Electronic Materials 22, 140-145, 2021 | 4 | 2021 |
| Exceptionally linear and highly sensitive photo-induced unipolar inverter device M Naqi, JY Lee, BH Lee, S Kim, SY Lee, H Yoo IEEE Journal of the Electron Devices Society 9, 180-186, 2021 | 4 | 2021 |
| Investigation on dependency mechanism of inverter voltage gain on current level of photo stressed depletion mode thin-film transistors BH Lee, S Kim, SY Lee Solid-State Electronics 156, 5-11, 2019 | 4 | 2019 |
| Electrode-adaptive thin-film integrated logic circuits BH Lee, KS Cho, A Sohn, S Hwang, SY Lee IEEE Transactions on Electron Devices 66 (2), 957-962, 2019 | 4 | 2019 |
| Thin Film Logic Circuits with Amorphous SiInZnO Channel Layer Annealed at Different Atmospheres for Next‐Generation Integrated Circuits BH Lee, SY Lee physica status solidi (a) 215 (12), 1700732, 2018 | 4 | 2018 |
| Influence of channel thickness variation on temperature and bias induced stress instability of amorphous SiInZnO thin film transistors BH Lee, SY Lee Transactions on Electrical and Electronic Materials 18 (1), 51-54, 2017 | 4 | 2017 |
| Structural and electronic properties with respect to Si doping in oxygen rich ZnSnO amorphous oxide semiconductor BH Lee, J Park, A Kumar, S Choi, DH Kim, SY Lee Materials Today Communications 33, 104809, 2022 | 3 | 2022 |
| Phase‐Controlled Artificial SiZnSnO/P (VDF‐TrFE) Synaptic Devices with a High Dynamic Range for Neuromorphic Computing BH Lee, JY Lee, A Kumar, SY Lee Advanced Electronic Materials 8 (12), 2200810, 2022 | 3 | 2022 |
Ji Ye LeePh.D. Course, Department of Electrical Engineering, Korea University, South Korea在 korea.ac.kr 的电子邮件经过验证
Ji Ye LeePh.D. Course, Department of Electrical Engineering, Korea University, South Korea在 korea.ac.kr 的电子邮件经过验证