Ageing and failure modes of IGBT modules in high-temperature power cycling V Smet, F Forest, JJ Huselstein, F Richardeau, Z Khatir, S Lefebvre, ... IEEE transactions on industrial electronics 58 (10), 4931-4941, 2011 | 672 | 2011 |
Temperature measurement of power semiconductor devices by thermo-sensitive electrical parameters—A review Y Avenas, L Dupont, Z Khatir IEEE transactions on power electronics 27 (6), 3081-3092, 2011 | 581 | 2011 |
A review on DC/DC converter architectures for power fuel cell applications A Kolli, A Gaillard, A De Bernardinis, O Bethoux, D Hissel, Z Khatir Energy Conversion and Management 105, 716-730, 2015 | 246 | 2015 |
Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling L Dupont, Z Khatir, S Lefebvre, S Bontemps Microelectronics Reliability 46 (9-11), 1766-1771, 2006 | 146 | 2006 |
Degradation behavior of 600 V–200 A IGBT modules under power cycling and high temperature environment conditions M Bouarroudj, Z Khatir, JP Ousten, F Badel, L Dupont, S Lefebvre Microelectronics Reliability 47 (9-11), 1719-1724, 2007 | 112 | 2007 |
Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions S Lefebvre, Z Khatir, F Saint-Eve IEEE Transactions on Electron Devices 52 (2), 276-283, 2005 | 109 | 2005 |
Regenerative braking modeling, control, and simulation of a hybrid energy storage system for an electric vehicle in extreme conditions K Itani, A De Bernardinis, Z Khatir, A Jammal, M Oueidat IEEE Transactions on Transportation Electrification 2 (4), 465-479, 2016 | 101 | 2016 |
Comparative analysis of two hybrid energy storage systems used in a two front wheel driven electric vehicle during extreme start-up and regenerative braking operations K Itani, A De Bernardinis, Z Khatir, A Jammal Energy Conversion and Management 144, 69-87, 2017 | 95 | 2017 |
Robustness of 1.2 kV SiC MOSFET devices D Othman, S Lefebvre, M Berkani, Z Khatir, A Ibrahim, A Bouzourene Microelectronics Reliability 53 (9-11), 1735-1738, 2013 | 80 | 2013 |
Comparison between two braking control methods integrating energy recovery for a two-wheel front driven electric vehicle K Itani, A De Bernardinis, Z Khatir, A Jammal Energy Conversion and Management 122, 330-343, 2016 | 73 | 2016 |
Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions A Ibrahim, JP Ousten, R Lallemand, Z Khatir Microelectronics Reliability 58, 204-210, 2016 | 70 | 2016 |
Experimental validation of a thermal modelling method dedicated to multichip power modules in operating conditions S Carubelli, Z Khatir Microelectronics journal 34 (12), 1143-1151, 2003 | 67 | 2003 |
Stress-based model for lifetime estimation of bond wire contacts using power cycling tests and finite-element modeling N Dornic, Z Khatir, SH Tran, A Ibrahim, R Lallemand, JP Ousten, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019 | 64 | 2019 |
Robustness of SiC JFET in short-circuit modes N Boughrara, S Moumen, S Lefebvre, Z Khatir, P Friedrichs, JC Faugieres IEEE Electron device letters 30 (1), 51-53, 2008 | 63 | 2008 |
Investigations on junction temperature estimation based on junction voltage measurements Z Khatir, L Dupont, A Ibrahim Microelectronics Reliability 50 (9-11), 1506-1510, 2010 | 61 | 2010 |
Comparison study on performances and robustness between SiC MOSFET & JFET devices–Abilities for aeronautics application D Othman, M Berkani, S Lefebvre, A Ibrahim, Z Khatir, A Bouzourene Microelectronics Reliability 52 (9-10), 1859-1864, 2012 | 58 | 2012 |
Real-time computation of thermal constraints in multichip power electronic devices Z Khatir, S Carubelli, F Lecoq IEEE Transactions on Components and Packaging Technologies 27 (2), 337-344, 2004 | 58 | 2004 |
Experimental investigations of trench field stop IGBT under repetitive short-circuits operations M Arab, S Lefebvre, Z Khatir, S Bontemps 2008 IEEE Power Electronics Specialists Conference, 4355-4360, 2008 | 57 | 2008 |
Temperature-level effect on solder lifetime during thermal cycling of power modules M Bouarroudj, Z Khatir, JP Ousten, S Lefebvre IEEE Transactions on device and materials reliability 8 (3), 471-477, 2008 | 50 | 2008 |
Boundary element analysis of thermal fatigue effects on high power IGBT modules Z Khatir, S Lefebvre Microelectronics Reliability 44 (6), 929-938, 2004 | 48 | 2004 |