Impact of channel doping engineering on the high-frequency noise performance of junctionless In0. 3Ga0. 7As/GaAs FET: a numerical simulation study M Fallahnejad, M Vadizadeh, A Salehi, A Kashaniniya, F Razaghian
Physica E: Low-dimensional Systems and Nanostructures 115, 113715, 2020
17 2020 Performance enhancement of field effect transistor without doping junctions using In M Fallahnejad, M Vadizadeh, A Salehi
International Journal of Modern Physics B 33 (07), 1950050, 2019
10 2019 Design and simulation of low noise amplifier at 10 GHz by using GaAs High Electron Mobility transistor M Fallahnejad, Y Najmabadi, A Kashaniniya
IOSR Journal of Electrical and Electronics Engineering 10 (5), 29-34, 2015
10 2015 Design and simulation noise characteristics of AlGaN/GaN HEMT on SIC substrate for low noise applications M Fallahnejad, A Kashaniniya, M Vadizadeh
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE) 15, 31-37, 2015
10 2015 Design of Low Noise Amplifiers at 10 GHZ and 15 GHZ for Wireless Communication Systems M Fallahnejad, A Kashaniniya
IOSR Journal of Electrical and Electronics Engineering 9 (5), 47-53, 2014
10 2014 High-speed SOI junctionless transistor based on hybrid heterostructure of Si/Si0.5 Ge0.5 and asymmetric spacers with outstanding analog/RF parameters M Fallahnejad, A Amini, A Khodabakhsh, M Vadizadeh
Applied Physics A 128 (1), 47, 2022
6 2022 Double gate double-channel AlGaN/GaN MOS HEMT and its applications to LNA with Sub-1 dB noise figure M Vadizadeh, M Fallahnejad, M Shaveisi, R Ejlali, F Bajelan
Silicon 15 (2), 1093-1103, 2023
5 2023 Junctionless In0. 3Ga0. 7As/GaAs transistor with a shell doping profile for the design of a low-noise amplifier with a sub-1-dB noise figure for X-band applications M Vadizadeh, M Fallahnejad, R Ejlali
Journal of Computational Electronics 21 (5), 1127-1137, 2022
5 2022 Impact of effective mass changes with mole-fraction on the analog/radio frequency benchmarking parameters in junctionless Ga M Vadizadeh, M Fallahnejad
International Journal of Modern Physics B 35 (23), 2150238, 2021
5 2021 Improving subthreshold slope in Si/InAs/Ge junctionless tunneling FET-based biosensor by using asymmetric gate oxide thickness for low-power applications: A numerical … M Vadizadeh, M Fallahnejad, P Sotoodeh, R Ejlali, M Azadmanesh
Materials Science and Engineering: B 292, 116445, 2023
3 2023 Low-noise Si/Si0.5 Ge0.5 SOI junctionless TeraFET for designing sub-0.5 dB ultra-broadband LNA in 6G applications M Fallahnejad, A Khodabakhsh, A Amini, M Vadizadeh
Applied Physics A 129 (5), 336, 2023
2 2023 Design of a Low Noise Amplifier for 10 GHz Wireless Communication systems M Fallahnejad
6th Iranian conference on electrical and electronics engineering, 2014
2 2014 Enhancing the performance of an InAsSb/InAlSb-based pBn photodetector for early detection of a biomarker of bone marrow cancer: a proposed and simulated approach with extended … M Shaveisi, P Aliparast, M Fallahnejad
Sensing and Imaging 25 (1), 22, 2024
2024 A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance A Khodabakhsh, M Fallahnejad, M Vadizadeh
Microelectronics Reliability 152, 115278, 2024
2024 Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications A Khodabakhsh, A Amini, M Fallahnejad
IEEE Transactions on Nanotechnology, 2023
2023 High-sensitivity biosensor based on junctionless transistor using Si/Si 0.5 Ge0. 5 hybrid heterostructure: A potential device for SARS-CoV-2 sensing M Fallahnejad, M Shaveisi
2022 Iranian International Conference on Microelectronics (IICM), 43-47, 2022
2022 Improvement in Electrical Characteristics of Silicon on Insulator Junctionless Field Effect Transistor (SOI-JLFET) Using the Auxiliary Gate Mahdi Vadizadeh, Mohammad Fallahnejad, Seyed Saleh Ghoreishi
Iranian Journal of Electrical and Computer Engineering 18 (100884), 67-72, 2020
2020 
mahdi vadizadehAssistant professor at IAU, Karaj branch在 kiau.ac.ir 的电子邮件经过验证
