关注
I-Ting Wang
I-Ting Wang
Taiwan Semiconductor Research Institute, NARLabs
在 narlabs.org.tw 的电子邮件经过验证
标题
引用次数
引用次数
年份
Mitigating effects of non-ideal synaptic device characteristics for on-chip learning
PY Chen, B Lin, IT Wang, TH Hou, J Ye, S Vrudhula, J Seo, Y Cao, S Yu
2015 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 194-199, 2015
2602015
Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device
YF Wang, YC Lin, IT Wang, TP Lin, TH Hou
Scientific Reports 5 (1), 10150, 2015
1942015
3D Ta/TaOx/TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications
IT Wang, CC Chang, LW Chiu, T Chou, TH Hou
Nanotechnology 27 (36), 365204, 2016
1862016
Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory
CW Hsu, IT Wang, CL Lo, MC Chiang, WY Jang, CH Lin, TH Hou
2013 Symposium on VLSI Technology, T166-T167, 2013
1492013
Fully parallel write/read in resistive synaptic array for accelerating on-chip learning
L Gao, IT Wang, PY Chen, S Vrudhula, J Seo, Y Cao, TH Hou, S Yu
Nanotechnology 26 (45), 455204, 2015
1402015
Mitigating asymmetric nonlinear weight update effects in hardware neural network based on analog resistive synapse
CC Chang, PC Chen, T Chou, IT Wang, B Hudec, CC Chang, CM Tsai, ...
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 8 (1 …, 2017
1222017
3D synaptic architecture with ultralow sub-10 fJ energy per spike for neuromorphic computation
IT Wang, YC Lin, YF Wang, CW Hsu, TH Hou
2014 IEEE international electron devices meeting, 28.5. 1-28.5. 4, 2014
1122014
Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory
CW Hsu, YF Wang, CC Wan, IT Wang, CT Chou, WL Lai, YJ Lee, TH Hou
Nanotechnology 25 (16), 165202, 2014
952014
3D resistive RAM cell design for high-density storage class memory—a review
B Hudec, CW Hsu, IT Wang, WL Lai, CC Chang, T Wang, K Fröhlich, ...
Science China Information Sciences 59, 1-21, 2016
742016
3D vertical TaOx/TiO2RRAM with over 103self-rectifying ratio and sub-μA operating current
CW Hsu, CC Wan, IT Wang, MC Chen, CL Lo, YJ Lee, WY Jang, CH Lin, ...
2013 IEEE International Electron Devices Meeting, 10.4. 1-10.4. 4, 2013
572013
Bipolar RRAM With Multilevel States and Self-Rectifying Characteristics
CW Hsu, TH Hou, MC Chen, IT Wang, CL Lo
IEEE electron device letters 34 (7), 885-887, 2013
542013
Spectral imaging and spectral LIDAR systems: moving toward compact nanophotonics-based sensing
N Li, CP Ho, IT Wang, P Pitchappa, YH Fu, Y Zhu, LYT Lee
Nanophotonics 10 (5), 1437-1467, 2021
372021
Challenges and opportunities toward online training acceleration using RRAM-based hardware neural network
CC Chang, JC Liu, YL Shen, T Chou, PC Chen, IT Wang, CC Su, MH Wu, ...
2017 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2017
372017
Progress and benchmark of spiking neuron devices and circuits
FX Liang, IT Wang, TH Hou
Advanced Intelligent Systems 3 (8), 2100007, 2021
322021
Interface engineered HfO2-based 3D vertical ReRAM
B Hudec, IT Wang, WL Lai, CC Chang, P Jančovič, K Fröhlich, M Mičušík, ...
Journal of Physics D: Applied Physics 49 (21), 215102, 2016
312016
Categorization of multilevel-cell storage-class memory: an RRAM example
JC Liu, CW Hsu, IT Wang, TH Hou
IEEE Transactions on Electron Devices 62 (8), 2510-2516, 2015
242015
Flexible three-bit-per-cell resistive switching memory using a-IGZO TFTs
SC Wu, HT Feng, MJ Yu, IT Wang, TH Hou
IEEE electron device letters 34 (10), 1265-1267, 2013
202013
Giant Photoresponsivity and External Quantum Efficiency in a Contact‐Engineered Broadband a‐IGZO Phototransistor
YH Lai, IT Wang, TH Hou
Advanced Functional Materials 32 (24), 2200282, 2022
192022
IEEE/ACM Int. Conf. Computer-Aided Design
F Chen, B Lin, I Wang, T Hou, J Ye, S Vrudhula, J Seo, Y Cao, S Yu
182008
Self-rectifying RRAM cell structure and 3D crossbar array architecture thereof
TH Hou, CW Hsu, IT Wang
US Patent 9,059,391, 2015
132015
系统目前无法执行此操作,请稍后再试。
文章 1–20