| Hybrid 2D–CMOS microchips for memristive applications K Zhu, S Pazos, F Aguirre, Y Shen, Y Yuan, W Zheng, O Alharbi, ... Nature 618 (7963), 57-62, 2023 | 113 | 2023 |
| Advanced Data Encryption using 2D Materials C Wen, X Li, T Zanotti, FM Puglisi, Y Shi, F Saiz, A Antidormi, S Roche, ... Advanced Materials 33 (27), 2100185, 2021 | 87 | 2021 |
| Variability and yield in h‐BN‐based memristive circuits: the role of each type of defect Y Shen, W Zheng, K Zhu, Y Xiao, C Wen, Y Liu, X Jing, M Lanza Advanced Materials 33 (41), 2103656, 2021 | 72 | 2021 |
| Defect‐Free Metal Deposition on 2D Materials via Inkjet Printing Technology W Zheng, F Saiz, Y Shen, K Zhu, Y Liu, C McAleese, B Conran, X Wang, ... Advanced Materials 34 (48), 2104138, 2022 | 32 | 2022 |
| Advanced data encryption using two-dimensional materials M Lanza, C Wen, X Li, T Zanotti, FM Puglisi, Y Shi, F Saiz, A Antidormi, ... Adv. Mater 33 (2100185.10), 1002, 2021 | 25 | 2021 |
| Highly accurate thickness determination of 2D materials Y Xiao, W Zheng, B Yuan, C Wen, M Lanza Crystal Research and Technology 56 (6), 2100056, 2021 | 16 | 2021 |
| Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller S Pazos, W Zheng, T Zanotti, F Aguirre, T Becker, Y Shen, K Zhu, Y Yuan, ... Nanoscale 15 (5), 2171-2180, 2023 | 13 | 2023 |
| High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors S Pazos, T Becker, MA Villena, W Zheng, Y Shen, Y Yuan, O Alharbi, ... Advanced Functional Materials 34 (15), 2213816, 2024 | 11 | 2024 |
| Conductance quantization in h-bn memristors JB Roldan, D Maldonado, A Cantudo, Y Shen, W Zheng, M Lanza Applied Physics Letters 122 (20), 2023 | 8 | 2023 |
| Modeling the variability of Au/Ti/h-BN/Au memristive devices JB Roldan, D Maldonado, C Aguilera-Pedregosa, FJ Alonso, Y Xiao, ... IEEE Transactions on Electron Devices 70 (4), 1533-1539, 2022 | 5 | 2022 |
| 3D simulation of conductive nanofilaments in multilayer h-BN memristors via a circuit breaker approach D Maldonado, A Cantudo, FM Gómez-Campos, Y Yuan, Y Shen, W Zheng, ... Materials Horizons 11 (4), 949-957, 2024 | 3 | 2024 |
| Stochastic resonance in 2D materials based memristors JB Roldán, A Cantudo, JJ Torres, D Maldonado, Y Shen, W Zheng, ... npj 2D Materials and Applications 8 (1), 7, 2024 | 1 | 2024 |
| Data Encryption: Advanced Data Encryption using 2D Materials (Adv. Mater. 27/2021) C Wen, X Li, T Zanotti, FM Puglisi, Y Shi, F Saiz, A Antidormi, S Roche, ... Advanced Materials 33 (27), 2170205, 2021 | 1 | 2021 |
| The origin and mitigation of defects induced by metal evaporation in 2D materials W Zheng, B Yuan, MA Villena, K Zhu, S Pazos, Y Shen, Y Yuan, Y Ping, ... Materials Science and Engineering: R: Reports 160, 100831, 2024 | | 2024 |
| Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications S Pazos, Y Shen, H Zhang, J Verdú, A Fontana, W Zheng, Y Yuan, ... Nature Electronics, 1-10, 2024 | | 2024 |
| Back-end-of-line integration of 2D materials on silicon microchips M Lanza, S Pazos, K Zhu, Y Yuan, Y Shen, O Alharbi, W Zheng, X Zhang, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
Mario LanzaIEEE Fellow | Associate Professor at KAUST在 kaust.edu.sa 的电子邮件经过验证
