| Static noise margin analysis of various SRAM topologies S Birla, RK Singh, M Pattnaik International Journal of Engineering and Technology 3 (3), 304, 2011 | 72 | 2011 |
| Device and circuit design challenges for low leakage SRAM for ultra low power applications S Birla, NK Shukla, M Pattanaik, RK Singh Canadian Journal on Electrical & Electronics Engineering 1 (7), 156-167, 2010 | 49 | 2010 |
| Analysis of the data stability and leakage power in the various SRAM cells topologies S Birla, NK Shukla, M Pattnaik, RK Singh International Journal of Engineering Science and Technology 2 (7), 2936-2944, 2010 | 32 | 2010 |
| Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM E Abbasian, S Birla, M Gholipour Microelectronics Journal 123, 105427, 2022 | 30 | 2022 |
| Leakage Current reduction in 6T single cell SRAM at 90nm technology S Birla, NK Shukla, D Mukherjee, RK Singh 2010 International Conference on Advances in Computer Engineering, 292-294, 2010 | 28 | 2010 |
| A single-bitline 9T SRAM for low-power near-threshold operation in FinFET technology E Abbasian, M Gholipour, S Birla Arabian Journal for Science and Engineering 47 (11), 14543-14559, 2022 | 26 | 2022 |
| Speed and leakage power trade-off in various SRAM circuits NK Shukla, S Birla, RK Singh, M Pattanaik International Journal of Computer and Electrical Engineering 3 (2), 244, 2011 | 26 | 2011 |
| A comprehensive analysis of different SRAM cell topologies in 7-nm FinFET technology E Abbasian, S Birla, M Gholipour Silicon, 1-12, 2021 | 24 | 2021 |
| Analysis of 8T SRAM Cell at Various Process Corners at 65 nm Process Technology. S Birla, NK Shukla, K Rathi, RK Singh, M Pattanaik Circuits Syst. 2 (4), 326-329, 2011 | 21 | 2011 |
| Leakage current minimization in deep-submicron conventional single cell SRAM NK Shukla, D Mukherjee, S Birla, RK Singh 2010 International Conference on Recent Trends in Information …, 2010 | 16 | 2010 |
| A review on effect of various high-k dielectric materials on the performance of FinFET device J Kumar, S Birla, G Agarwal Materials Today: Proceedings 79, 297-302, 2023 | 15 | 2023 |
| Stability and leakage analysis of a novel pp based 9t sram cell using n curve at deep submicron technology for multimedia applications S Birla, RK Singh, M Pattanaik Circuits and Systems 2 (04), 274, 2011 | 12 | 2011 |
| A 9T high-stable and low-energy half-select-free SRAM cell design using TMDFETs E Abbasian, S Birla, M Gholipour Analog Integrated Circuits and Signal Processing 112 (1), 141-149, 2022 | 11 | 2022 |
| Electrical transport properties of thermally stable n-ZnO/AlN/p-Si diode grown using RF sputtering CP Gupta, AK Singh, PK Jain, SK Sharma, S Birla, S Sancheti Materials Science in Semiconductor Processing 128, 105734, 2021 | 11 | 2021 |
| Low leakage SRAM cell with improved stability for iot applications C Duari, S Birla Procedia Computer Science 171, 1469-1478, 2020 | 11 | 2020 |
| Variability aware FinFET SRAM cell with improved stability and power for low power applications S Birla Circuit World 45 (4), 196-207, 2019 | 11 | 2019 |
| Design and investigation of stability‐and power‐improved 11T SRAM cell for low‐power devices E Abbasian, S Birla, E Mojaveri Moslem International Journal of Circuit Theory and Applications 50 (11), 3827-3845, 2022 | 10 | 2022 |
| A dual port 8T SRAM cell using FinFET & CMOS logic for leakage reduction and enhanced read & write stability C Duari, S Birla, AK Singh Journal of Integrated Circuits and Systems 15 (2), 1-7, 2020 | 10 | 2020 |
| Color image watermarking with watermark authentication against false positive detection using SVD N Singh, S Joshi, S Birla International Conference on Sustainable Computing in Science, Technology and …, 2019 | 10 | 2019 |
| Tunnel field effect transistor device structures: A comprehensive review PK Kumawat, S Birla, N Singh Materials Today: Proceedings 79, 292-296, 2023 | 9 | 2023 |
neeraj kr shuklaThe NorthCap University Gurgaon (Haryana) India在 ncuindia.edu 的电子邮件经过验证
