关注
Fernando José da Costa
Fernando José da Costa
Centro Universitário FEI
在 fei.edu.br 的电子邮件经过验证
标题
引用次数
引用次数
年份
Influence of interface traps density and temperature variation on the NBTI effect in p-Type junctionless nanowire transistors
NG Junior, FJ Costa, R Trevisoli, S Barraud, RT Doria
Solid-State Electronics 186, 108097, 2021
62021
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors
FJ Costa, R Trevisoli, RT Doria
Solid-State Electronics 185, 108073, 2021
62021
Analysis of the substrate bias effect on the thermal properties of SOI UTBB transistors
FJ Costa, MA Pavanello, R Trevisoli, RT Doria
2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2017
62017
UTBB thermal coupling analysis in technological node level
FJ Costa, RT Doria, RT Doria
Journal of Integrated Circuits and Systems 15 (2), 1-5, 2020
52020
Analysis of the Output Conductance Degradation With the Substrate Bias in SOI UTB and UTBB Transistors
FJ Costa, R Trevisoli, RT Doria
2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2018
42018
Analysis of the substrate effect by the capacitive coupling in SOI UTBB Transistors
FJ Costa, R Trevisoli, RT Doria
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2019
32019
Analysis of standard-MOS and ultra-low-power diodes composed by SOI UTBB transistors
FJ Costa, R Trevisoli, RT Doria
IEEE Journal of the Electron Devices Society, 2023
12023
Experimental Characterization of Switching Properties of ReRAM Devices by the Capacitance Measurements
FJ Costa, A Zeinati, R Trevisoli, D Misra, RT Doria
2023 37th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2023
12023
Ultra-low-power diodes composed by SOI UTBB transistors
FJ Costa, R Trevisoli, RT Doria
2022 IEEE Latin American Electron Devices Conference (LAEDC), 1-4, 2022
12022
SOI UTBB Capacitive Cross-Coupling Effects in Ultimate Technological Nodes
FJ Costa, R Trevisoli, RT Doria
2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS), 1-4, 2022
12022
Substrate Effect Evaluation by the Analysis of Intrinsic Capacitances in SOI UTBB Transistors
FJ Costa, RT Doria, RT Doria
Journal of Integrated Circuits and Systems 15 (1), 1-6, 2020
12020
Characterization of Switching Properties in ReRAM Devices by the Capacitance of the MIM Structure
FJ Costa, A Zeinati, R Trevisoli, D Misra, RT Doria
Journal of Integrated Circuits and Systems 19 (2), 1-6, 2024
2024
Standard MOS Diodes Composed by SOI UTBB Transistors
FJ Costa, R Trevisoli, CE Capovilla, RT Doria
2022 36th Symposium on Microelectronics Technology (SBMICRO), 1-4, 2022
2022
Thermal Cross-Coupling Effects Analysis in UTBB Transistors
FJ Costa, R Trevisoli, RT Doria
2020 Joint International EUROSOI Workshop and International Conference on …, 2020
2020
Analysis of the Thermal Properties of Self-Cascode Structures Composed by UTBB Transistors
FJ Costa, R Trevisoli, M de Souza, RT Doria
2020 IEEE Latin America Electron Devices Conference (LAEDC), 1-4, 2020
2020
Behavior of the Output Conductance with Respect to Temperature Variation
RTD F. J. Costa, R. Trevisoli
Seminatec 2019 - XIV Workshop on semiconductors and micro & nano technology …, 2019
2019
Estudo do efeito de autoaquecimento em transistores SOI-MOSFET fabricados em tecnologia de camadas ultra finas (UTB e UTBB)
FJ Costa
Centro Universitário FEI, São Bernardo do Campo, 2018
2018
Analysis of Thermal Resistance with BOX Thinning in UTB SOI MOSFETs
RTD F. J. Costa, R. Trevisoli
Seminatec 2017 - XII Workshop on semiconductions and micro & nano technology, 2017
2017
Characterization of Switching Properties of ReRAM Devices by the Capacitance Measurements
FJ Costa, A Zeinati, R Trevisoli, D Misra, RT Doria
Capacitive Couplings in SOI UTBB Transistors
FJ Costa, R Trevisoli, RT Doria
Proceedings of XV Workshop on Semiconductors and Micro & Nano Technology …, 0
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